Patent US5198677A successfully refreshed from Google Patents.
← Back to Patent Explorer
US5198677A Expired / Lapsed US ⏱️ 0.0 years remaining

Production of N+ ions from a multicusp ion beam apparatus

Assignee: United States Department of Energy
•
Filing: 1991-10-11
•
Granted: 1993-03-30
•
Expires: 2011-10-11
📄 Original PDF 🌐 Google Patents 🔄 Sync Now

Abstract

Abstract A method of generating a high purity (at least 98%) N + ion beam using a multicusp ion source (10) having a chamber (11) formed by a cylindrical chamber wall (12) surrounded by a plurality of magnets (13), a filament (57) centrally disposed in said chamber, a plasma electrode (36) having an extraction orifice (41) at one end of the chamber, a magnetic filter having two parallel magnets (21, 22) spaced from said plasma electrode (36) and dividing the chamber (11) into arc discharge and extraction regions. The method includes ionizing nitrogen gas in the arc discharge region of the chamber (11), maintaining the chamber wall (12) at a positive voltage relative to the filament (57) and at a magnitude for an optimum percentage of N + ions in the extracted ion beams, disposing a hot liner (45) within the chamber and near the chamber wall (12) to limit recombination of N + ions into the N 2 + ions, spacing the magnets (21, 22) of the magnetic filter from each other for optimum percentage of N 3 ions in the extracted ion beams, and maintaining a relatively low pressure downstream of the extraction orifice and of a magnitude (preferably within the range of 3-8×10 -4 torr) for an optimum percentage of N + ions in the extracted ion beam.

Inventors

  • 👤 Ka-Ngo Leung
  • 👤 Wulf B. Kunkel
  • 👤 Steven R. Walther

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-01 13:50
CPC Classifications
H; H01; H01J; H01J27/00; H01J27/02; H01J27/08; H01J27/14; H01J2237/00; H01J2237/06; H01J2237/08; H01J2237/30; H01J2237/317; H01J2237/31701

Claims Analysis

Total Claims: 7
Claim 1
Independent Claim 215 words
The method of generating a high purity atomic N + ion beam using a multicusp ion source having a chamber formed by a cylindrical chamber wall surrounded by a plurality of magnets, a filament centrally disposed in said chamber, a plasma electrode having an extraction orifice at one end of the chamber, a magnetic filter having two parallel magnets spaced from said plasma electrode and dividing the chamber into arc discharge and extraction regions, the method comprising: (a) causing an electron flow to take place in said arc discharge region from said filament to said chamber wall, (b) introducing nitrogen gas into said chamber, (c) maintaining the chamber wall at a positive voltage relative to said filament and at a magnitude for an optimum percentage of N + ions in the extracted ion beam, (d) disposing a hot liner within said chamber and near said chamber wall to limit recombination of atomic N + ions into molecular N 2 + ions, (e) spacing said magnets of said magnetic filter from each other for optimum percentage of N + ions in the extracted ion beams, and (f) maintaining a relatively low operating pressure downstream of said extraction orifice and of a magnitude for an optimum percentage of atomic N + ions in the extracted ion beam.
Claim 2
Independent Claim 215 words
The method of generating a high purity atomic N + ion beam using a multicusp ion source having a chamber formed by a cylindrical chamber wall surrounded by a plurality of magnets, a filament centrally disposed in said chamber, a plasma electrode having an extraction orifice at one end of the chamber, a magnetic filter having two parallel magnets spaced from said plasma electrode and dividing the chamber into arc discharge and extraction regions, the method comprising: (a) causing an electron flow to take place in said arc discharge region from said filament to said chamber wall, (b) introducing nitrogen gas into said chamber, (c) maintaining the chamber wall at a positive voltage relative to said filament and at a magnitude for an optimum percentage of N + ions in the extracted ion beam, (d) disposing a hot liner within said chamber and near said chamber wall to limit recombination of atomic N + ions into molecular N 2 + ions, (e) spacing said magnets of said magnetic filter from each other for optimum percentage of N + ions in the extracted ion beams, and (f) maintaining a relatively low operating pressure downstream of said extraction orifice and of a magnitude for an optimum percentage of atomic N + ions in the extracted ion beam.
Claim 3
Dependent Claim 55 words
The method of generating high purity atomic N + ion beams as set forth in claim 1, and further including: maintaining said plasma electrode at the same voltage as that of said chamber wall to prevent secondary emission of electrons from said plasma electrode from having sufficient energy to ionize molecular N 2 + ions.
Claim 4
Dependent Claim 40 words
The method of generating high purity N + ion beams as set forth in claim 1, and further including: maintaining said liner in good electrical contact with said chamber wall and in poor heat transfer relation to said chamber wall.
Claim 5
Independent Claim 37 words
The method of generating high purity atomic N + ion beams as set forth in claim wherein the operating pressure downstream of said extraction orifice is maintained at the pressure within the range of 3-8×10 -4 torr.
Claim 6
Dependent Claim 55 words
The method of generating high purity atomic N + ion beams as set forth in claim 4, and further including: maintaining said plasma electrode at the same voltage as that of said chamber wall to prevent secondary emission of electrons from said plasma electrode from having sufficient energy to ionize molecular N 2 + ions.
Claim 7
Dependent Claim 41 words
The method of generating high purity atomic N + ion beams as set forth in claim 5, and further including: maintaining said liner in good electrical contact with said chamber wall and in poor heat transfer relation to said chamber wall.

References Cited (Backward Citations)

US4233537A Cited
US4447732A Cited
US4486665A Cited
US4529571A Cited
US4661710A Cited
US4793961A Cited
US4739169A Cited
US4847476A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1996-03-29 1996-09-28 1997-03-30 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2000-03-29 2000-09-28 2001-03-30 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2004-03-29 2004-09-28 2005-03-30 $7700.00 Window Closed / Lapsed

Assigned Categories & Tags

No categories assigned to this patent yet.

Assign Category Tag