US5198375A
Expired / Lapsed
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Method for forming a bipolar transistor structure
Assignee: NXP USA Inc
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Filing: 1992-03-23
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Granted: 1993-03-30
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Expires: 2012-03-23
Abstract
Abstract A vertical bipolar transistor (10) and a lateral bipolar transistor (11) are formed wherein both transistors (10 and 11) have a substrate (12). A dielectric layer (22) is formed overlying the substrate (12), and a conductive layer (24) is formed overlying the dielectric layer (22). Another dielectric layer (26) is formed overlying the conductive layer (24). A device opening is formed through the dielectric layers (22 and 26) and the conductive layer (24). A conductive region (33) is formed within the device opening and overlying the substrate (12). For transistor (10), the conductive region (33) is doped to form an active base electrode region (36) and a first current electrode region (38). A second current electrode region is formed via a diffusion (16). For transistor (11), a base electrode is formed via a diffused base region (46), and first and second current electrodes are respectively formed via diffused regions (44 and 48).
Inventors
- 👤 James D. Hayden
- 👤 Carlos A. Mazure
- 👤 Jon T. Fitch
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 00:46
CPC Classifications
H; H10; H10D; H10D10/00; H10D10/01; H10D10/061; H10D10/051; H10D10/054; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0113; H10D84/00; H10D84/01; H10D84/0112; H10D84/0114; H10D84/02; H10D84/03; H10D84/038; Y; Y10; Y10S; Y10S148/00; Y10S148/011
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
185 words
A method for forming a bipolar transistor comprising the steps of: providing a base layer having a surface; forming a first dielectric layer overlying the base layer; forming a conductive layer overlying the first dielectric layer; forming a second dielectric layer overlying the conductive layer; removing portions of each of the first dielectric layer, the conductive layer, and the second dielectric layer to form both a device opening which exposes the surface of the base layer and a sidewall of the conductive layer; forming a sidewall dielectric layer adjacent the sidewall of the conductive layer; forming a conductive region within said device opening, the conductive region being doped to form a base electrode, an emitter electrode, and a collector electrode, said conductive layer being electrically coupled to at least one of a portion of the base electrode, a portion of the emitter electrode, or a portion of the collector electrode; removing the sidewall dielectric layer; forming a sidewall spacer overlying the conductive region; and forming an interconnecting layer of conductive material overlying the sidewall spacer, the interconnecting layer being electrically coupled to the conductive region.
Claim 2
Independent Claim
185 words
A method for forming a bipolar transistor comprising the steps of: providing a base layer having a surface; forming a first dielectric layer overlying the base layer; forming a conductive layer overlying the first dielectric layer; forming a second dielectric layer overlying the conductive layer; removing portions of each of the first dielectric layer, the conductive layer, and the second dielectric layer to form both a device opening which exposes the surface of the base layer and a sidewall of the conductive layer; forming a sidewall dielectric layer adjacent the sidewall of the conductive layer; forming a conductive region within said device opening, the conductive region being doped to form a base electrode, an emitter electrode, and a collector electrode, said conductive layer being electrically coupled to at least one of a portion of the base electrode, a portion of the emitter electrode, or a portion of the collector electrode; removing the sidewall dielectric layer; forming a sidewall spacer overlying the conductive region; and forming an interconnecting layer of conductive material overlying the sidewall spacer, the interconnecting layer being electrically coupled to the conductive region.
Claim 3
Dependent Claim
39 words
The method of claim 1 wherein the step of forming the sidewall spacer further comprises the step of: forming the sidewall spacer as a dielectric material wherein the sidewall spacer is laterally adjacent a portion of said device opening.
Claim 4
Dependent Claim
26 words
The method of claim 1 wherein the step of forming the conductive region further comprises the step of: forming said conductive region as an epitaxial region.
Claim 5
Dependent Claim
36 words
The method of claim 3 wherein the step of forming the conductive region further comprises the step of: using in-situ doping to electrically dope one of said base electrode, said collector electrode, or said emitter electrode.
Claim 6
Dependent Claim
32 words
The method of claim 1 wherein the step of removing portions further comprises the step of: using a non-selective etch to remove portions of the second dielectric layer and the conductive layer.
Claim 7
Dependent Claim
50 words
The method of claim 1 further comprising the steps of: forming a sidewall dielectric laterally adjacent said sidewall of the conductive layer; removing a portion of the sidewall dielectric to expose a portion of the conductive layer; and forming an electrical connection between the conductive region and the conductive layer.
Claim 8
Dependent Claim
37 words
The method of claim 1 wherein the step of removing portions further comprises the step of: etching the sidewall of the conductive layer to laterally recess the sidewall of the conductive layer before forming the sidewall dielectric.
Claim 9
Dependent Claim
169 words
The method of claim 1 wherein the step of removing portions further comprises the steps of: forming a masking layer overlying the second dielectric layer, the masking layer having a mask opening; etching a portion of the second dielectric layer which is exposed by the mask opening to form a first portion of the device opening in the second dielectric layer which is self-aligned to the mask opening and to expose a portion of the conductive layer; etching the exposed portion of the conductive layer to form a second portion of the device opening in the conductive layer which is self-aligned to the first portion of the device opening in the second dielectric layer and exposes a portion of the first dielectric layer; and etching the exposed portion of the first dielectric layer to form a third portion of the device opening in the first dielectric layer which is self-aligned to the second portion of the device opening in the conductive layer and exposes the surface of the substrate.
Claim 10
Dependent Claim
31 words
The method of claim 1 comprising the step of: electrically connecting the conductive layer to the conductive region by growing epitaxial material to connect the conductive layer and the conductive region.
Claim 11
Independent Claim
183 words
A method for forming a bipolar transistor comprising the steps of: providing a silicon substrate having a surface; forming a diffused region within the silicon substrate and exposed at the surface of the silicon substrate; forming a first dielectric layer overlying the silicon substrate; depositing a polysilicon conductive layer overlying the first dielectric layer; depositing a second dielectric layer overlying the polysilicon conductive layer; etching portions of each of the first dielectric layer, the polysilicon conductive layer, and the second dielectric layer to form both a device opening which exposes the surface of the diffused region and a sidewall of the polysilicon conductive layer; forming a sidewall dielectric layer adjacent the sidewall of the polysilicon conductive layer; growing an epitaxial region within said device opening, the epitaxial region being doped to form an emitter electrode, a base electrode, and a collector electrode; removing the sidewall dielectric layer; and electrically connecting the polysilicon conductive layer to at least one of said collector electrode, said base electrode, and said emitter electrode by thermally driving dopant atoms from the polysilicon conductive layer into the epitaxial region.
Claim 12
Independent Claim
183 words
A method for forming a bipolar transistor comprising the steps of: providing a silicon substrate having a surface; forming a diffused region within the silicon substrate and exposed at the surface of the silicon substrate; forming a first dielectric layer overlying the silicon substrate; depositing a polysilicon conductive layer overlying the first dielectric layer; depositing a second dielectric layer overlying the polysilicon conductive layer; etching portions of each of the first dielectric layer, the polysilicon conductive layer, and the second dielectric layer to form both a device opening which exposes the surface of the diffused region and a sidewall of the polysilicon conductive layer; forming a sidewall dielectric layer adjacent the sidewall of the polysilicon conductive layer; growing an epitaxial region within said device opening, the epitaxial region being doped to form an emitter electrode, a base electrode, and a collector electrode; removing the sidewall dielectric layer; and electrically connecting the polysilicon conductive layer to at least one of said collector electrode, said base electrode, and said emitter electrode by thermally driving dopant atoms from the polysilicon conductive layer into the epitaxial region.
Claim 13
Dependent Claim
57 words
The method of claim 10 further comprising the steps of: forming a sidewall oxide laterally adjacent said sidewall of the polysilicon conductive layer before formation of the epitaxial region; removing the sidewall oxide after the formation of a portion of the epitaxial region; and forming an electrical connection between the epitaxial region and the polysilicon conductive layer.
Claim 14
Dependent Claim
47 words
The method of claim 10 wherein the step of etching portions further comprises the step of: etching the sidewall of the polysilicon conductive layer to laterally recess the sidewall of the polysilicon conductive layer before forming a sidewall oxide adjacent the sidewall of the polysilicon conductive layer.
Claim 15
Dependent Claim
36 words
The method of claim 10 wherein the step of growing the epitaxial region further comprises the step of: using in-situ doping to electrically dope one of said base electrode, said collector electrode or said emitter electrode.
Claim 16
Independent Claim
182 words
A method for forming a bipolar transistor comprising the steps of: providing a silicon substrate having a surface; forming a diffused region within the silicon substrate and exposed at the surface of the silicon substrate; forming a first dielectric layer overlying the silicon substrate; depositing a polysilicon conductive layer overlying the first dielectric layer; depositing a second dielectric layer overlying the polysilicon conductive layer; etching portions of each of the first dielectric layer, the polysilicon conductive layer, and the second dielectric layer to form both a device opening which exposes the surface of the diffused region and a sidewall of the polysilicon conductive layer; forming a sidewall dielectric layer adjacent the sidewall of the polysilicon conductive layer; growing an epitaxial region within said device opening, the epitaxial region being doped to form an emitter electrode, a base electrode, and a collector electrode; removing said sidewall dielectric layer; forming an electrical connection to said base electrode by thermally driving dopant atoms from the polysilicon conductive layer into the epitaxial region; and forming a dielectric spacer laterally adjacent a portion of said device opening.
Claim 17
Independent Claim
182 words
A method for forming a bipolar transistor comprising the steps of: providing a silicon substrate having a surface; forming a diffused region within the silicon substrate and exposed at the surface of the silicon substrate; forming a first dielectric layer overlying the silicon substrate; depositing a polysilicon conductive layer overlying the first dielectric layer; depositing a second dielectric layer overlying the polysilicon conductive layer; etching portions of each of the first dielectric layer, the polysilicon conductive layer, and the second dielectric layer to form both a device opening which exposes the surface of the diffused region and a sidewall of the polysilicon conductive layer; forming a sidewall dielectric layer adjacent the sidewall of the polysilicon conductive layer; growing an epitaxial region within said device opening, the epitaxial region being doped to form an emitter electrode, a base electrode, and a collector electrode; removing said sidewall dielectric layer; forming an electrical connection to said base electrode by thermally driving dopant atoms from the polysilicon conductive layer into the epitaxial region; and forming a dielectric spacer laterally adjacent a portion of said device opening.
Claim 18
Dependent Claim
60 words
The method of claim 14 further comprising the steps of: forming a sidewall oxide laterally adjacent said sidewall of the polysilicon conductive layer before formation of the epitaxial region; removing a portion of the sidewall oxide after the formation of a portion of the epitaxial region; and forming an electrical connection between the epitaxial region and the polysilicon conductive region.
Claim 19
Dependent Claim
39 words
The method of claim 15 wherein the step of etching portions further comprises the step of: etching the sidewall of the polysilicon conductive layer to laterally recess the sidewall of the polysilicon conductive layer before forming the sidewall oxide.
Claim 20
Dependent Claim
36 words
The method of claim 14 wherein the step of growing the epitaxial region further comprises the step of: using in-situ doping to electrically dope one of said base electrode, said collector electrode or said emitter electrode.
References Cited (Backward Citations)
US4824799A
Cited
US4703554A
Cited
US4663831A
Cited
US4696097A
Cited
US4849371A
Cited
US4902641A
Cited
US4851362A
Cited
US4786615A
Cited
US4860077A
Cited
US4876212A
Cited
US4997775A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-03-29 | 1996-09-28 | 1997-03-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-03-29 | 2000-09-28 | 2001-03-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-03-29 | 2004-09-28 | 2005-03-30 | $7700.00 | Window Closed / Lapsed |