US5196958A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Optical amplifier having gain at two separated wavelengths
Assignee: Uniphase Opto Holdings Inc
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Filing: 1990-10-23
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Granted: 1993-03-23
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Expires: 2010-10-23
Abstract
Abstract An optical amplifier with a semiconductor body comprising a layer structure grown on a substrate 1 with an active layer 4 situated between two cladding layers (2, 3) with a strip-shaped amplification region bounded by two end surfaces (7, 8) which form the input and output surfaces of the radiation to be amplified. The active layer comprises a number of quantum well (QW) layers 4A with direct band transition, which are separated by barrier layers 4B of a different semiconductor material. The material, the number, and the thickness of the QW layers 4A and the barrier layers 4B in combination with the length 1 of the amplification region are chosen in such a way that two optical transitions can take place in the active layer 4, maximum amplification occurring at a certain current density through the PN junction for the radiation wavelengths corresponding to these optical transitions, while the end surfaces (7, 8) are provided with an anti-reflection layer 9 which has a reflection coefficient R of at most 0.5% for these two wavelengths. An anti-reflection layer made up of four layers of alternately titanium oxide and aluminum oxide is advantageously used.
Inventors
- 👤 Bastiaan H. Verbeek
- 👤 Wilma Van Es-Spiekman
- 👤 Leonardus J. M. Hendrix
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 02:53
CPC Classifications
B; B82; B82Y; B82Y20/00; H; H01; H01S; H01S5/00; H01S5/02; H01S5/028; H01S5/20; H01S5/22; H01S5/227; H01S5/30; H01S5/34; H01S5/343; H01S5/3434; H01S5/50; H01S5/2275; H01S5/2277; H01S5/3418; H01S5/34306
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
249 words
An optical amplifier comprising: a substrate of a first conductivity type; a strip shaped amplification region on the substrate, the amplification region including: a covering layer including at least a first passive layer of the first conductivity type; a second passive layer of a second, opposite conductivity type; a PN junction between the first and second passive layers; an active layer disposed between the first and the second passive layers, the active layer consisting of a plurality of quantum well layers of a semiconductor material with direct band transition, which layers are separated from one another by barrier layers of another semiconductor material, the number and thickness of the quantum well layers and the barrier layers and the length of the strip shaped amplification region selected so that two optical transitions can take place between a conduction band and two valancy bands in the active layer, the amplification region being operative at a current density through the PN junction sufficient to produce saturation effects for at least one of said two optical transitions to amplify radiation at two wavelengths corresponding to the two optical transitions; end surfaces bounding the active layer of the strip shaped amplification region, the end surfaces being practically perpendicular to the active layer and forming input and output surfaces for radiation to be amplified; connection conductors on the second passive layer and the substrate; and anti-reflection layers on end surfaces of the amplifier having a reflection coefficient of at most 0.5 for the two wavelengths.
Claim 2
Dependent Claim
249 words
An optical amplifier comprising: a substrate of a first conductivity type; a strip shaped amplification region on the substrate, the amplification region including: a covering layer including at least a first passive layer of the first conductivity type; a second passive layer of a second, opposite conductivity type; a PN junction between the first and second passive layers; an active layer disposed between the first and the second passive layers, the active layer consisting of a plurality of quantum well layers of a semiconductor material with direct band transition, which layers are separated from one another by barrier layers of another semiconductor material, the number and thickness of the quantum well layers and the barrier layers and the length of the strip shaped amplification region selected so that two optical transitions can take place between a conduction band and two valancy bands in the active layer, the amplification region being operative at a current density through the PN junction sufficient to produce saturation effects for at least one of said two optical transitions to amplify radiation at two wavelengths corresponding to the two optical transitions; end surfaces bounding the active layer of the strip shaped amplification region, the end surfaces being practically perpendicular to the active layer and forming input and output surfaces for radiation to be amplified; connection conductors on the second passive layer and the substrate; and anti-reflection layers on end surfaces of the amplifier having a reflection coefficient of at most 0.5 for the two wavelengths.
Claim 3
Dependent Claim
33 words
An optical amplifier as claimed in claim 1, characterized in that the two radiation wavelengths with maximum amplification lie between 1280 nm and 1320 nm and between 1500 nm and 1570 nm, respectively.
Claim 4
Dependent Claim
29 words
An optical amplifier as claimed in claim 1, characterized in that the QW layers consist of indium-gallium-arsenic phosphide (InGaAsP) and that the barrier layers consist of indium phosphide (InP).
Claim 5
Dependent Claim
41 words
An optical amplifier as claimed in claim 3, characterized in that the number of QW layers is six, that the thickness of the QW layers is approximately 9 nm, and that the thickness of the barrier layers is approximately 20 nm.
Claim 6
Dependent Claim
127 words
An optical amplifier as claimed in claim 1, characterized in that an anti-reflection layer consisting of N layers, alternately a first layer of a first material and a first, higher refractive index n 1 , and a second layer of a second material having a second, lower refractive index n 2 , the optical thickness of each layer being substantially equal to 1/4 the average wavelength of the radiation to be amplified, and the relation between the number N, the refractive index n 1 of the first layers and the refractive index n 2 of the second layers being given by the equation: ##EQU3## in which the value n 1 xn 2 is substantially equal to the effective refractive index of the waveguide structure of the amplifier.
Claim 7
Dependent Claim
25 words
An optical amplifier as claimed in claim 5, characterized in that the first layers consist of titanium dioxide and the second layers of aluminum oxide.
Claim 8
Dependent Claim
42 words
An optical amplifier as claimed in claim 5, characterized in that at least one of the two materials is formed by silicon oxynitride, the refractive index of which is determined by the chosen ratio between oxygen and nitrogen in the silicon oxynitride.
Claim 9
Dependent Claim
16 words
An optical amplifier as claimed in claim 5, characterized in that the number N is four.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-03-22 | 1996-09-21 | 1997-03-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-03-22 | 2000-09-21 | 2001-03-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-03-22 | 2004-09-21 | 2005-03-23 | $7700.00 | Window Closed / Lapsed |