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US5196395A
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Method for producing crystallographic boundary junctions in oxide superconducting thin films
Assignee: Clearday Inc
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Filing: 1991-03-04
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Granted: 1993-03-23
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Expires: 2011-03-04
Abstract
Abstract A method for generating repeatable and reproducible crystallographic grain-boundary junctions is provided by forming a film on a crystalline substrate which has intersecting faces. In a preferred embodiment, a single crystal substrate is etched by an anisotropic etchant to provide a "V"-groove in one face, and an epitaxial superconducting film is grown on the faces of the V-groove. In another preferred embodiment, a step is etched with an anisotropic etch, and an epitaxial superconducting film grown on the step. Grain-boundary junctions are formed at the points of intersection of the faces with each other, or with the faces and the surface of the substrate. The film may be patterned and etched in the area of the boundary junction to form useful devices.
Inventors
- 👤 Timothy W. James
- 👤 Julia S. Fleming
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 11:53
CPC Classifications
H; H10; H10N; H10N60/00; H10N60/10; H10N60/12; H10N60/124; H10N60/01; H10N60/0912; H10N60/0941; Y; Y10; Y10S; Y10S505/00; Y10S505/70; Y10S505/701; Y10S505/702; Y10S505/725; Y10S505/728; Y10S505/73; Y10S505/732
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
69 words
A method for producing weak link junctions in an oxide superconductor on a substrate comprising the steps of: forming an epitaxial oxide superconductor film on a first face and, on a second face of the substrate, the second face being adjacent and not parallel to the first face, such that a planar fault is formed in the superconductor at the intersection of the first face and the second face.
Claim 2
Independent Claim
69 words
A method for producing weak link junctions in an oxide superconductor on a substrate comprising the steps of: forming an epitaxial oxide superconductor film on a first face and, on a second face of the substrate, the second face being adjacent and not parallel to the first face, such that a planar fault is formed in the superconductor at the intersection of the first face and the second face.
Claim 3
Dependent Claim
25 words
The method of claim 1 for producing weak link junctions in an oxide superconductor on a substrate further comprising the step of patterning the superconductor.
Claim 4
Dependent Claim
31 words
The method of claim 2 for producing weak link junctions in an oxide superconductor wherein the superconductor is patterned by the steps of masking the superconductor and etching the unmasked areas.
Claim 5
Dependent Claim
12 words
The method of claim 2 wherein the masking step comprises photolithographic masking.
Claim 6
Independent Claim
88 words
A method for forming crystallographic boundary junctions in an oxide superconductor on a substrate comprising the steps of: defining a first face on the surface of the substrate, forming a second face on the substrate such that a line of intersection is made between the first face and the second face, and forming an epitaxial oxide superconductor film over at least the adjacent portions of the first face and the second face such that a crystallographic boundary junction is formed in the superconductor at the line of intersection.
Claim 7
Independent Claim
88 words
A method for forming crystallographic boundary junctions in an oxide superconductor on a substrate comprising the steps of: defining a first face on the surface of the substrate, forming a second face on the substrate such that a line of intersection is made between the first face and the second face, and forming an epitaxial oxide superconductor film over at least the adjacent portions of the first face and the second face such that a crystallographic boundary junction is formed in the superconductor at the line of intersection.
Claim 8
Dependent Claim
15 words
The method of claim 5 wherein the second face is formed by etching the substrate.
Claim 9
Dependent Claim
15 words
The method of claim 5 wherein the second face is formed by polishing the substrate.
Claim 10
Dependent Claim
14 words
The method of claim 6 wherein the etching is done by a chemical etchant.
Claim 11
Dependent Claim
11 words
The method of claim 8 wherein the etchant includes sulfuric acid.
Claim 12
Dependent Claim
11 words
The method of claim 8 wherein the etchant includes phosphorous acid.
Claim 13
Dependent Claim
16 words
The method of claim 6 wherein the oxide superconductor film is grown by vapor deposition techniques.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-03-22 | 1996-09-21 | 1997-03-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-03-22 | 2000-09-21 | 2001-03-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-03-22 | 2004-09-21 | 2005-03-23 | $7700.00 | Window Closed / Lapsed |