Patent US5196372A successfully refreshed from Google Patents.
US5196372A
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Process for forming metal deposited film containing aluminum as main component by use of alkyl hydride
Assignee: Canon Inc
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Filing: 1992-06-15
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Granted: 1993-03-23
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Expires: 2012-06-15
Abstract
Abstract A process for forming a Si-containing Al film of good quality according to the CVD method utilizing an alkyl aluminum hydride, a gas containing silicon and hydrogen, which is an excellent deposited film formation process also capable of selective deposition of Si-containing Al.
Inventors
- 👤 Nobuo Mikoshiba
- 👤 Kazuo Tsubouchi
- 👤 Kazuya Masu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 21:22
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/42; H; H10; H10P; H10P14/00; H10P14/40; H10P14/412; H10P14/42; H10P14/43; H10P14/432
Claims Analysis
Total Claims: 32
Claim 1
Independent Claim
100 words
A process for forming a deposited film comprising the steps of: (a) providing a substrate having an electron donative surface (A) in a space for formation of the deposited film; (b) introducing a gas of an alkyl aluminum hydride, a gas containing silicon atoms and hydrogen gas into said space for formation of deposited film; and (c) maintaining the temperature of said electron donative surface (A) within the range of from the decomposition temperature of said alkyl aluminum hydride to 450° C. to form said deposited film comprised substantially of aluminum and containing silicon on said electron donative surface (A).
Claim 2
Dependent Claim
100 words
A process for forming a deposited film comprising the steps of: (a) providing a substrate having an electron donative surface (A) in a space for formation of the deposited film; (b) introducing a gas of an alkyl aluminum hydride, a gas containing silicon atoms and hydrogen gas into said space for formation of deposited film; and (c) maintaining the temperature of said electron donative surface (A) within the range of from the decomposition temperature of said alkyl aluminum hydride to 450° C. to form said deposited film comprised substantially of aluminum and containing silicon on said electron donative surface (A).
Claim 3
Dependent Claim
15 words
The process according to claim 1, wherein said alkyl aluminum hydride is dimethyl aluminum hydride.
Claim 4
Dependent Claim
15 words
The process according to claim 1, wherein said alkyl aluminum hydride is monomethyl aluminum hydride.
Claim 5
Dependent Claim
24 words
The process according to claim 1, wherein said substrate is constituted of a material selected from single monocrystalline silicon, polycrystalline silicon and amorphous silicon.
Claim 6
Dependent Claim
38 words
The process according to claim 1, wherein said substrate is a III-V compound semiconductor containing an element belonging to the group III of the periodic table and an element belonging to the group V of the periodic table.
Claim 7
Dependent Claim
38 words
The process according to claim 1, wherein said substrate is a II-VI compound semiconductor containing an element belonging to the group II of the periodic table and an element belonging to the group VI of the periodic table.
Claim 8
Dependent Claim
26 words
The process according to claim 1, wherein said substrate is a metal containing at least one element selected from tungsten, molybdenum, tantalum, aluminum, titanium and copper.
Claim 9
Dependent Claim
12 words
The process according to claim 1, wherein said substrate is a metal.
Claim 10
Dependent Claim
12 words
The process according to claim 1, wherein said substrate is a semiconductor.
Claim 11
Dependent Claim
11 words
The process according to claim 1, wherein said substrate is silicide.
Claim 12
Dependent Claim
12 words
The process according to claim 1, wherein said aluminum film is monocrystalline.
Claim 13
Dependent Claim
109 words
A process for forming a deposited film comprising the steps of: (a) providing a substrate having an electron donative surface (A) and an electron non-donative surface (B) in a space for formation of the deposited film; (b) introducing a gas of an alkyl aluminum hydride, a gas containing silicon atoms and hydrogen gas into said space for formation of the deposited film; and (c) maintaining the temperature of said electron donative surface (A) within the range of from the decomposition temperature of said alkyl aluminum hydride to 450° C. to form said deposited film comprised substantially of aluminum and containing silicon selectively on said electron donative surface (A). c
Claim 14
Dependent Claim
109 words
A process for forming a deposited film comprising the steps of: (a) providing a substrate having an electron donative surface (A) and an electron non-donative surface (B) in a space for formation of the deposited film; (b) introducing a gas of an alkyl aluminum hydride, a gas containing silicon atoms and hydrogen gas into said space for formation of the deposited film; and (c) maintaining the temperature of said electron donative surface (A) within the range of from the decomposition temperature of said alkyl aluminum hydride to 450° C. to form said deposited film comprised substantially of aluminum and containing silicon selectively on said electron donative surface (A). c
Claim 15
Dependent Claim
15 words
The process according to claim 12, wherein said alkyl aluminum hydride is dimethyl aluminum hydride.
Claim 16
Dependent Claim
15 words
The process according to claim 12, wherein said alkyl aluminum hydride is monomethyl aluminum hydride.
Claim 17
Dependent Claim
38 words
The process according to claim 12, wherein said electron donative surface (A) is formed of a material selected from monocrystalline silicon, polycrystalline silicon and amorphous silicon, and said electron non-donative surface (B) is formed of an insulating material.
Claim 18
Dependent Claim
56 words
The process according to claim 12, wherein said electron donative surface (A) is formed of a III-V group compound semiconductor containing an element belonging to the group III of the periodic table and an element belonging to the group V of the periodic table, and said electron non-donative surface (B) is formed of an insulating material.
Claim 19
Dependent Claim
56 words
The process according to claim 12, wherein said electron donative surface (A) is formed of a II-VI group compound semiconductor containing an element belonging to the group II of the periodic table and an element belonging to the group VI of the periodic table, and said electron non-donative surface (B) is formed of an insulating material.
Claim 20
Dependent Claim
43 words
The process according to claim 12, wherein said electron donative surface (A) is formed of a metal containing at least one element selected from tungsten, molybdenum, tantalum, aluminum, titanium and copper, and said electron non-donative surface (B) is formed of an insulating material.
Claim 21
Dependent Claim
29 words
The process according to claim 12, wherein said electron donative surface (A) is formed of a metal and said electron non-donative surface (B) is formed of an insulating material.
Claim 22
Dependent Claim
29 words
The process according to claim 12, wherein said electron donative surface (A) is formed of a semiconductor and said electron non-donative surface (B) is formed of an insulating material.
Claim 23
Dependent Claim
28 words
The process according to claim 12, wherein said electron donative surface (A) is formed of silicide and said electron non-donative surface (B) is formed of an insulating material.
Claim 24
Dependent Claim
38 words
A process for forming a deposited film, which comprises depositing silicon-containing aluminum on a substrate according to the chemical vapor deposition method utilizing a gas of an alkyl aluminum hydride, a gas containing silicon atoms and hydrogen gas.
Claim 25
Dependent Claim
38 words
A process for forming a deposited film, which comprises depositing silicon-containing aluminum on a substrate according to the chemical vapor deposition method utilizing a gas of an alkyl aluminum hydride, a gas containing silicon atoms and hydrogen gas.
Claim 26
Dependent Claim
47 words
A process for forming a deposited film, which comprises selectively depositing silicon-containing aluminum according to the chemical vapor deposition method utilizing a gas of an alkyl aluminum hydride, a gas containing silicon atoms and hydrogen gas on a substrate having an insulating surface and an electroconductive surface.
Claim 27
Dependent Claim
47 words
A process for forming a deposited film, which comprises selectively depositing silicon-containing aluminum according to the chemical vapor deposition method utilizing a gas of an alkyl aluminum hydride, a gas containing silicon atoms and hydrogen gas on a substrate having an insulating surface and an electroconductive surface.
Claim 28
Dependent Claim
50 words
The process according to anyone of claims 1, 12, 22 and 23, wherein the gas containing silicon atoms is selected from SiH 4 , Si 2 H 6 , Si 3 H 8 , Si(CH 3 ) 4 , SiCl 4 , SiH 2 Cl 2 and SiH 3 Cl.
Claim 29
Dependent Claim
48 words
A process for forming a deposited film which comprises selecting a gas of an alkyl aluminum hydride, a gas containing silicon atoms and hydrogen gas; and selectively depositing silicon-containing aluminum by chemical vapor deposition on a substrate having an insulating surface and a semiconductive surface utilizing said gases.
Claim 30
Dependent Claim
48 words
A process for forming a deposited film which comprises selecting a gas of an alkyl aluminum hydride, a gas containing silicon atoms and hydrogen gas; and selectively depositing silicon-containing aluminum by chemical vapor deposition on a substrate having an insulating surface and a semiconductive surface utilizing said gases.
Claim 31
Dependent Claim
13 words
The process according to claims 1 or 12 wherein the temperature is 200°-450°C.
Claim 32
Dependent Claim
13 words
The process according to claim 26, wherein the temperature is 200°-400° C. e
References Cited (Backward Citations)
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