Semiconductor device having ventilative insulating films

Claim 2

A semiconductor device comprising; a first wiring layer, an insulator layer formed on said first wiring layer and including a first silicon oxide film, a spin-coated insulating film formed on said first silicon oxide film and a second silicon oxide film formed on said spin-coated insulating film, a through-hole selectively formed in said insulator layer to expose a part of said first wiring layer, and a second wiring layer formed on said insulator layer and in contact with said part of said first wiring layer exposed through said through-hole, wherein said second silicon oxide film has a density that is lower than the density of said first silicon oxide film and allows gas from said spin-coated insulating film to go through said second silicon oxide film.

Claim 3

A semiconductor device as claimed in claim 1, wherein said first silicon oxide film has a contraction rate of 3% or less.

Claim 4

A semiconductor device as claimed in claim 1, wherein said second silicon oxide film has a contraction rate of 3% or more.

Claim 5

A semiconductor device as claimed in claim 1, wherein said spincoated insulating film is made of an organic siloxane polymer.

Claim 6

A semiconductor device comprising: a semiconductor substrate selectively covered by a first insulating film, a plurality of first wiring layers formed on said first insulating film, an insulation layer formed on said plurality of first wiring layers and including a first silicon oxide film, a spin-coated insulating film formed on said first silicon oxide film and a second silicon oxide film formed on said spin-coated insulating film, said first silicon oxide film being formed by means of a plasma vapor deposition method, said spin-coated insulating film being formed by means of a spin coating method on said first silicon oxide film, said second silicon oxide film being formed by means of a plasma vapor deposition method on said spin-coated insulating film, at least one through-hole selectively formed in said insulation layer to expose a part of at least one of said plurality of first wiring layers, and a plurality of second wiring layers selectively formed on said insulation layer, at least one of said plurality of second wiring layers being in contact with said part exposed through said at least one through-hole, and said second silicon oxide film having a density that is lower than the density of said first silicon oxide film and allows gas from said spin-coated insulating film to go through said second silicon oxide film.

Claim 7

A semiconductor device comprising: a semiconductor substrate selectively covered by a first insulating film, a plurality of first wiring layers formed on said first insulating film, an insulation layer formed on said plurality of first wiring layers and including a first silicon oxide film, a spin-coated insulating film formed on said first silicon oxide film and a second silicon oxide film formed on said spin-coated insulating film, said first silicon oxide film being formed by means of a plasma vapor deposition method, said spin-coated insulating film being formed by means of a spin coating method on said first silicon oxide film, said second silicon oxide film being formed by means of a plasma vapor deposition method on said spin-coated insulating film, at least one through-hole selectively formed in said insulation layer to expose a part of at least one of said plurality of first wiring layers, and a plurality of second wiring layers selectively formed on said insulation layer, at least one of said plurality of second wiring layers being in contact with said part exposed through said at least one through-hole, and said second silicon oxide film having a density that is lower than the density of said first silicon oxide film and allows gas from said spin-coated insulating film to go through said second silicon oxide film.

Claim 8

A semiconductor device comprising: at least one first wiring layer selectively formed on an insulating layer formed on a semiconductor substrate, a multilevel insulation layer formed on said insulating layer and said first wiring layer, said multilevel insulation layer including a first silicon oxide film, an organic siloxane polymer film formed on said first silicon oxide film and a second silicon oxide film formed on said organic siloxane polymer film, at least one contact hole selectively formed in said multilevel insulation layer to expose a part of said first wiring layer, and at least one second wiring layer selectively formed on said multilevel insulation layer and connected to said part of said first wiring layer exposed through said contact hole, wherein said second silicon oxide film has a density that is lower than the density of said first silicon oxide film and allows gas from said organic siloxane polymer film to pass through said second silicon oxide film.

Claim 9

A semiconductor device comprising: at least one first wiring layer selectively formed on an insulating layer formed on a semiconductor substrate, a multilevel insulation layer formed on said insulating layer and said first wiring layer, said multilevel insulation layer including a first silicon oxide film, an organic siloxane polymer film formed on said first silicon oxide film and a second silicon oxide film formed on said organic siloxane polymer film, at least one contact hole selectively formed in said multilevel insulation layer to expose a part of said first wiring layer, and at least one second wiring layer selectively formed on said multilevel insulation layer and connected to said part of said first wiring layer exposed through said contact hole, wherein said second silicon oxide film has a density that is lower than the density of said first silicon oxide film and allows gas from said organic siloxane polymer film to pass through said second silicon oxide film.