Patent US5184398A successfully refreshed from Google Patents.
US5184398A
Expired / Lapsed
US
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In-situ real-time sheet resistance measurement method
Assignee: Texas Instruments Inc
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Filing: 1991-08-30
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Granted: 1993-02-09
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Expires: 2011-08-30
Abstract
Abstract A system 20 for measuring the sheet resistance of a conductive layer on the top surface of a semiconductor wafer 22 is disclosed herein. In one embodiment, the system includes a chuck 30 electrically coupled to the backside surface of the wafer 22. The chuck 30 is capable of supporting the wafer 22 electrostatically. A signal source 40 provides an excitation signal to the wafer 22 and circuitry for monitoring an induced signal is provided. The sheet resistance on the top surface of the wafer 22 is determined from the measurements of the excitation and induced electrical signals. Other systems and methods are also disclosed.
Inventors
- 👤 Mehrdad M. Moslehi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:45
CPC Classifications
H; H10; H10P; H10P72/00; H10P72/70; H10P72/72; H10P72/722; C; C23; C23C; C23C16/00; C23C16/44; C23C16/458; C23C16/4582; C23C16/4583; C23C16/52; H10P74/00; H10P74/20; H10P74/207; Y; Y10; Y10T; Y10T279/00; Y10T279/23; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49117
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
99 words
A method of fabricating an electrostatic chuck comprising the steps of: forming a series of grooves in the surface of a boron nitride disk; forming an insulating material on the surface of each of said grooves; forming a plurality of electrically conducting electrodes, the shape of each electrode corresponding to the shape of one of said grooves, such that each electrode will fit in one of said insulated grooves; attaching each of said electrodes into said corresponding insulated groove; and providing means to electrically couple at least two of said electrodes to an external signal processing and excitation circuit.
Claim 2
Independent Claim
99 words
A method of fabricating an electrostatic chuck comprising the steps of: forming a series of grooves in the surface of a boron nitride disk; forming an insulating material on the surface of each of said grooves; forming a plurality of electrically conducting electrodes, the shape of each electrode corresponding to the shape of one of said grooves, such that each electrode will fit in one of said insulated grooves; attaching each of said electrodes into said corresponding insulated groove; and providing means to electrically couple at least two of said electrodes to an external signal processing and excitation circuit.
Claim 3
Dependent Claim
20 words
The method of claim 1 and further comprising the step of forming a layer of insulating material on said electrodes.
Claim 4
Dependent Claim
10 words
The method of claim 1 wherein said electrodes comprise aluminum.
Claim 5
Dependent Claim
12 words
The method of claim 1 wherein said electrodes comprise a refractory metal.
Claim 6
Dependent Claim
10 words
The method of claim 4 wherein said electrodes comprise nickel.
Claim 7
Dependent Claim
13 words
The method of claim 1 wherein said electrodes comprise a high temperature alloy.
Claim 8
Dependent Claim
10 words
The method of claim 6 wherein said electrodes comprise monel.
Claim 9
Dependent Claim
18 words
The method of claim 1 and further comprising the step of connecting a heating/cooling module to said disk.
Claim 10
Dependent Claim
18 words
The method of claim 1 wherein said step of forming a series of grooves comprises forming circular grooves.
Claim 11
Independent Claim
71 words
A method of fabricating an electrostatic chuck comprising the steps of: forming a first insulating buffer layer on the surface of a disk; depositing a plurality of electrodes on the surface of said first insulating buffer layer; forming a second insulating layer over said plurality of electrodes, said second insulating layer less than a few microns thick; and forming vias to electrically couple each of said electrodes to a processing circuit.
Claim 12
Independent Claim
71 words
A method of fabricating an electrostatic chuck comprising the steps of: forming a first insulating buffer layer on the surface of a disk; depositing a plurality of electrodes on the surface of said first insulating buffer layer; forming a second insulating layer over said plurality of electrodes, said second insulating layer less than a few microns thick; and forming vias to electrically couple each of said electrodes to a processing circuit.
Claim 13
Dependent Claim
14 words
The method of claim 10 wherein said electrodes are formed from a refractory metal.
Claim 14
Dependent Claim
13 words
The method of claim 10 wehrein said disk comprises a boron nitride disk.
Claim 15
Dependent Claim
20 words
The method of claim 10 wherein said step of depositing a plurality of electrodes comprises forming by physical vapor deposition.
Claim 16
Dependent Claim
20 words
The method of claim 13 wherein said step of depositing a plurality of electrodes comprises sputtering and patterning said electrodes.
Claim 17
Dependent Claim
14 words
The method of claim 10 wherein said processing circuit is external of said chuck.
Claim 18
Dependent Claim
22 words
The method of claim 10 wherein said electrodes comprises a metal selected from the group consisting of molybdenum, nickel, platinum or cobalt.
Claim 19
Dependent Claim
13 words
The method of claim 10 wherein said second insulating material comprises silicon oxide.
Claim 20
Dependent Claim
22 words
The method of claim 10 wherein said plurality of electrodes are formed on a substantially flat surface of said insulating buffer layer.
Claim 21
Independent Claim
82 words
A method of fabricating an electrostatic chuck comprising the steps of: providing a boron nitride wafer; forming a buffer layer on said wafer, said buffer layer having a substantially flat upper surface; depositing a refractory metal layer on said upper surface; patterning said refractory metal layer to form a plurality of electrodes; forming an insulating layer over said electrodes, said insulating layer less than a few microns thick; and forming vias to electrically couple each of said vias to a processing circuit.
Claim 22
Independent Claim
82 words
A method of fabricating an electrostatic chuck comprising the steps of: providing a boron nitride wafer; forming a buffer layer on said wafer, said buffer layer having a substantially flat upper surface; depositing a refractory metal layer on said upper surface; patterning said refractory metal layer to form a plurality of electrodes; forming an insulating layer over said electrodes, said insulating layer less than a few microns thick; and forming vias to electrically couple each of said vias to a processing circuit.
Claim 23
Dependent Claim
21 words
The method of claim 19 wherein said refractory metal is selected from the group consisting of molybdenum, nickel, platinum or cobalt.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-02-09 | 1996-08-10 | 1997-02-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-02-09 | 2000-08-10 | 2001-02-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-02-09 | 2004-08-10 | 2005-02-09 | $7700.00 | Window Closed / Lapsed |