Patent US5183530A successfully refreshed from Google Patents.
US5183530A
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Method of manufacturing diamond thermistors
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1990-09-10
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Granted: 1993-02-02
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Expires: 2010-09-10
Abstract
Abstract A method of manufacturing diamond thermistors is described. A pair of diamond contact regions having a low resistance are formed on a temperature sensing diamond substrate. The formation of the diamond contact regions is carried out by depositing a diamond film using a carbon compound gas and a dopant gas and etching the diamond film to leave the contact regions by an etchant comprising fluorine or oxygen.
Inventors
- 👤 Shunpei Yamazaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 08:27
CPC Classifications
H; H01; H01C; H01C17/00; H01C17/003; H01C17/06; H01C17/075; H01C17/08; H01C7/00; H01C7/04; H01C7/041
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
46 words
A method of manufacturing thermistors comprising: forming an impurity diamond film on a temperature sensing diamond substrate; selectively removing said impurity diamond film in order to leave a pair of contact regions; and forming a pair of electrodes respectively on the pair of said contact regions.
Claim 2
Independent Claim
46 words
A method of manufacturing thermistors comprising: forming an impurity diamond film on a temperature sensing diamond substrate; selectively removing said impurity diamond film in order to leave a pair of contact regions; and forming a pair of electrodes respectively on the pair of said contact regions.
Claim 3
Dependent Claim
14 words
The method of claim 1 wherein said removing step is performed by plasma etching.
Claim 4
Dependent Claim
27 words
The method of claim 2 wherein said plasma etching is performed with a plasma etchant comprising an element selected from the group consisting of fluorine and oxygen.
Claim 5
Dependent Claim
15 words
The method of claim 3 wherein said plasma etchant is formed from NF 3 .
Claim 6
Dependent Claim
25 words
The method of claim 1 wherein said diamond substrate is formed by depositing a diamond film having a substantially intrinsic type conductivity on a substrate.
Claim 7
Dependent Claim
13 words
The method of claim 5 wherein said substrate is a single crystalline diamond.
Claim 8
Dependent Claim
19 words
The method of claim 1 wherein said impurity diamond film is formed on a plateau of said diamond substrate.
Claim 9
Dependent Claim
25 words
The method of claim 1 wherein said impurity diamond film is formed by depositing a diamond film by chemical vapor deposition using a dopant gas.
Claim 10
Dependent Claim
11 words
The method of claim 8 wherein said dopant gas comprises boron.
Claim 11
Dependent Claim
25 words
The method of claim 1 wherein said diamond substrate is doped with an impurity selected from Groups IIb, IVa and VIa of the periodic table.
Claim 12
Independent Claim
51 words
A method of manufacturing thermistors comprising: forming an impurity diamond film on a temperature sensing diamond substrate; forming a pair of electrodes on said impurity diamond film; and selectively removing said impurity diamond film in order to leave a pair of contact regions by etching with said electrodes as a mask.
Claim 13
Independent Claim
51 words
A method of manufacturing thermistors comprising: forming an impurity diamond film on a temperature sensing diamond substrate; forming a pair of electrodes on said impurity diamond film; and selectively removing said impurity diamond film in order to leave a pair of contact regions by etching with said electrodes as a mask.
Claim 14
Dependent Claim
14 words
The method of claim 11 wherein said removing step is performed by plasma etching.
Claim 15
Dependent Claim
17 words
The method of claim 12 wherein said plasma etching is performed with a plasma etchant comprising oxygen.
Claim 16
Dependent Claim
15 words
The method of claim 13 wherein said plasma etchant is formed from O 2 .
Claim 17
Dependent Claim
27 words
The method of claim 11 wherein said diamond substrate is formed by depositing a diamond film using an alcohol but no dopant gas on an underlying substrate.
Claim 18
Dependent Claim
16 words
The method of claim 15 wherein said underlying substrate is a single crystalline silicon semiconductor substrate.
Claim 19
Dependent Claim
31 words
The method of claim 11 wherein said impurity diamond film is formed by depositing a diamond film by chemical vapor deposition using a carbon compound gas together with a dopant gas.
Claim 20
Dependent Claim
15 words
The method of claim 17 wherein said dopant gas is B(CH 3 ) 3 .
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-02-02 | 1996-08-03 | 1997-02-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-02-02 | 2000-08-03 | 2001-02-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-02-02 | 2004-08-03 | 2005-02-02 | $7700.00 | Window Closed / Lapsed |