Process for the wet-chemical surface treatment of semiconductor wafers

Claim 2

A process for wet-chemical surface post-polishing cleaning of semiconductor wafers in a system where aqueous phases containing one or more chemically active substances having a gaseous state in solution chemically act on the surfaces of the said wafers comprising the steps of: initially treating the water and the chemically active gaseous substances to reduce the quantity of contamination particles; introducing an effective amount of the chemically active substances in the gaseous state into the system; said chemically active substances are selected from the group consisting of the gases of ammonia, hydrogen chloride, hydrogen fluoride, ozone, ozonized oxygen, chlorine and bromine; introducing water at a temperature of 10° C. to 90° C. in the form of a mist into the system containing the semiconductor wafers; producing said mist by spraying water, feeding water through nozzles or aerosolizing water; forming the liquid phases chemically acting on the wafer surfaces within the system by the interaction of the gas phase and the mist; and exposing said wafer surfaces to said chemically acting liquid phases.

Claim 3

The process as claimed in claim 1, wherein silicon wafers are used as semiconductor wafers to be treated.

Claim 4

The process as claimed in claim 1, wherein a continuous stream of finely divided water in the form of a mist and a sequence of chemically active gaseous substances are introduced into the system.

Claim 5

The process as claimed in claim 3, wherein the sequence is adjusted so that water acts on the semi-conductor wafers to be treated between the periodic introduction of the chemically gaseous active substances.

Claim 6

The process as claimed in claim 1 comprising the step of rotating the semiconductor wafers during the introducing steps.

Claim 7

The process as claimed in claim 1, wherein the water is adjusted to a temperature between 35° C. to 75° C.

Claim 8

The process as claimed in claim 1, wherein the water is adjusted to a temperature between 15° C. to 25° C.

Claim 9

A process for wet-chemical surface post-polishing cleaning of semiconductor wafers contained in a closed treatment chamber utilizing water and chemically active gaseous substances, in which chemically active substances comprising hydrogen fluoride, hydrogen chloride, and ozonized oxygen chemically act on said surface of said wafers comprising the steps of: initially treating the water and the chemically active gaseous substances to reduce the quantity of contamination particles; spraying a water mist at a temperature of 10° C. to 90° C. within the chamber onto the surface of the semiconductor wafers to be treated; producing said mist by spraying water, feeding water through nozzles or aerosolizing water; subsequently introducing an effective amount of hydrogen fluoride gas into the chamber containing the water mist to form hydrofluoric acid on the surface of the wafers; spraying water onto the wafer surfaces to rinse the wafers and, during the spraying of the water, introducing an effective amount of hydrogen chloride gas and ozonized oxygen into the treatment chamber; rinsing the wafers again by spraying water onto the wafer surfaces; reintroducing an effective amount of hydrogen fluoride gas into the treatment chamber containing the water mist; rerinsing the wafers with water; additionally introducing an effective amount of ozonized oxygen into the treatment chamber containing the water mist, for a predetermined time interval; each of said chemically active substances chemically acting on said surface of said wafers; and drying the wafers in the treatment chamber.

Claim 10

A process for wet-chemical surface post-polishing cleaning of semiconductor wafers contained in a closed treatment chamber utilizing water and chemically active gaseous substances, in which chemically active substances comprising hydrogen fluoride, hydrogen chloride, and ozonized oxygen chemically act on said surface of said wafers comprising the steps of: initially treating the water and the chemically active gaseous substances to reduce the quantity of contamination particles; spraying a water mist at a temperature of 10° C. to 90° C. within the chamber onto the surface of the semiconductor wafers to be treated; producing said mist by spraying water, feeding water through nozzles or aerosolizing water; subsequently introducing an effective amount of hydrogen fluoride gas into the chamber containing the water mist to form hydrofluoric acid on the surface of the wafers; spraying water onto the wafer surfaces to rinse the wafers and, during the spraying of the water, introducing an effective amount of hydrogen chloride gas and ozonized oxygen into the treatment chamber; rinsing the wafers again by spraying water onto the wafer surfaces; reintroducing an effective amount of hydrogen fluoride gas into the treatment chamber containing the water mist; rerinsing the wafers with water; additionally introducing an effective amount of ozonized oxygen into the treatment chamber containing the water mist, for a predetermined time interval; each of said chemically active substances chemically acting on said surface of said wafers; and drying the wafers in the treatment chamber.

Claim 11

The process as recited in claim 8, wherein said first step of spraying water mist lasts approximately 20 seconds.

Claim 12

The process as recited in claim 8, wherein for both steps of introducing hydrogen fluoride, the flow rate of the hydrogen fluoride gas is matched to the flow rate of the water by a suitable molar ratio and the gas is introduced for about 60 seconds.

Claim 13

The process as recited in claim 8, wherein the first step of spraying water onto the wafer surfaces to rinse the wafers is for a duration of approximately 100 seconds.

Claim 14

The process as recited in claim 8, wherein said step of introducing hydrogen chloride gas and ozonized oxygen occurs for approximately 120 seconds.

Claim 15

The process as recited in claim 8, wherein said second step of rinsing the wafers occurs for approximately 180 seconds.

Claim 16

The process as recited in claim 8, wherein said step of reintroducing hydrogen fluoride gas occurs for approximately 60 seconds.

Claim 17

The process as recited in claim 8, wherein said final step of rerinsing the wafers with water occurs for a duration of 100 seconds.

Claim 18

The process as recited in claim 8, wherein said last step of introducing ozonized oxygen onto the water surfaces occurs for a duration of 60 seconds.

Claim 19

The process as claimed in claim 8, wherein the water is adjusted to a temperature between 35° C. to 75° C.

Claim 20

The process as claimed in claim 8, wherein the water is adjusted to a temperature between 15° C. to 25° C.