Patent US5178738A successfully refreshed from Google Patents.
US5178738A
Expired / Lapsed
US
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Ion-beam sputtering apparatus and method for operating the same
Assignee: Hitachi Ltd
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Filing: 1991-05-10
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Granted: 1993-01-12
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Expires: 2011-05-10
Abstract
Abstract An ion-beam sputtering apparatus using an insulator target and a method for operating the same which is characterized by interposing a conductor film forming process during the ion beam processings using the insulator target. This conductor film formation prevents undesired charge build up on the inside of the apparatus and prevents undesired occurrence of abnormal discharge in the ion beam processing using an insulator as a target.
Inventors
- 👤 Yasushi Ishikawa
- 👤 Naoya Kanda
- 👤 Akio Fujiwara
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 09:52
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/22; C23C14/56; C23C14/564; C23C14/34; C23C14/46
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
80 words
A method for operating an ion beam sputtering apparatus for forming an insulator film on a substrate by using ion beams, comprising the sequential steps of irradiating ion beams onto a target of an insulator material to sputter insulator particles for depositing the insulator film on the substrate and then forming a conductor film on insulator films which have undesirably formed at portions inside the ion beam sputtering apparatus during the formation of the desired insulator film on the substrate.
Claim 2
Independent Claim
80 words
A method for operating an ion beam sputtering apparatus for forming an insulator film on a substrate by using ion beams, comprising the sequential steps of irradiating ion beams onto a target of an insulator material to sputter insulator particles for depositing the insulator film on the substrate and then forming a conductor film on insulator films which have undesirably formed at portions inside the ion beam sputtering apparatus during the formation of the desired insulator film on the substrate.
Claim 3
Dependent Claim
30 words
A method according to claim 1, wherein said conductor film forming step is performed after the insulator films have been deposited in a thickness of the order of several microns.
Claim 4
Dependent Claim
24 words
A method according to claim 1, wherein said conductor film forming step is performed while the substrate is not subjected to an ion-beam processing.
Claim 5
Dependent Claim
34 words
A method according to claim 1, wherein said conductor film forming step is performed after the interior of the ion beam sputtering apparatus which has been covered with the insulator film is electrically charged.
Claim 6
Dependent Claim
96 words
An ion beam milling apparatus comprising a processing chamber having a holder for holding an insulator target substance to be etched and an ion generating chamber, said apparatus further comprising means for increasing a period between required cleanings of the processing chamber for maintaining stable operation including means for retractably locating a conductor target in front of the insulator target substance on said holder so as to enable deposit of conductive material from the conductor on an insulator deposition on interior wall surfaces of the processing chamber and thereby prevent abnormal discharge in the processing chamber.
Claim 7
Dependent Claim
96 words
An ion beam milling apparatus comprising a processing chamber having a holder for holding an insulator target substance to be etched and an ion generating chamber, said apparatus further comprising means for increasing a period between required cleanings of the processing chamber for maintaining stable operation including means for retractably locating a conductor target in front of the insulator target substance on said holder so as to enable deposit of conductive material from the conductor on an insulator deposition on interior wall surfaces of the processing chamber and thereby prevent abnormal discharge in the processing chamber.
References Cited (Backward Citations)
US4793908A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-01-12 | 1996-07-13 | 1997-01-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-01-12 | 2000-07-13 | 2001-01-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-01-12 | 2004-07-13 | 2005-01-12 | $7700.00 | Window Closed / Lapsed |