CRT update wideband double balanced mixer

Claim 2

A wideband double balanced GaAs monolithic microwave integrated circuit (MMIC) for mixing two input signals at two frequencies to produce signals at a third frequency corresponding to the sum and difference of the two input frequencies, said circuit comprising: mixing means, including first and second signal input means and signal output means; said first signal input means comprising a first pair of FETs each having an electrode coupled to a first input terminal for coupling a first input signal at a first frequency from said first input terminal to said mixing means; said second signal input means comprising a second pair of FETs each having an electrode coupled to a second input terminal for coupling a second input signal at a second frequency from said second input terminal to said mixing means; said first and second signal input means providing a high level of electrical isolation between said first and second input terminals; said mixing means comprising a diode ring quad having an output of one FET from each of said first and second pairs of FETs coupled to a first diode junction, having an output of the other FET from each of said first and second pairs of FETs coupled to a second diode junction diagonally opposite said first diode junction; said circuit further comprising output means derived from additional diode junctions of said diode ring quad; said mixing means being operative to mix said first and second input signals to produce an output signal at said output means.

Claim 3

A mixer as described in claim 1 wherein said first pair of FETs are driven in phase by a radio frequency source coupled to said first input terminal, and said second pair of FETs are driven in push-pull by a local oscillator source coupled to said second input terminal.

Claim 4

A mixer as described in claim 2 wherein said first and second pairs of FETs are coupled as common source amplifiers, said first pair of FETs each having a gate electrode coupled to said first input terminal, and said second pair of FETs each having a gate electrode coupled in push-pull to said second input terminal; wherein one FET from each of said first and second pairs of FETs has a drain coupled to said first diode junction. and the other FET from each of said first and second pairs of FETs has a drain coupled to said second diode junction.

Claim 5

A mixer as described in claim 2 wherein the sources of said first pair of FETs are coupled in phase to said first input terminal, and the sources of said second pair of FETs are coupled in push-pull to said second input terminal; and the gates of said first and second pairs of FETs are coupled to a voltage source.

Claim 6

A mixer as described in claim 2, wherein said second input means comprises an active balun.

Claim 7

A high level wideband self-biasing GaAs monolithic microwave integrated circuit for mixing large amplitude input signals at two frequencies to produce signals at a third frequency corresponding to sum and difference frequencies of the two input frequencies, said circuit comprising: mixing means, including first and second signal input means and signal output means; said first signal input means comprising a first pair of FETs each having a source electrode coupled to a first input terminal and each having a grounded gate electrode; said second signal input means comprising a second pair of FETs configured as an active balun, each FET of the second pair having a drain electrode coupled to the drain electrode of one FET of said first pair of FETs to form top and bottom drain junctions, and further, each FET of said second pair of FETs having one of its remaining electrodes coupled to a second input terminal; said first and second signal input means being effective to couple each of said first and second input signals to said top and bottom drain junctions while providing a high level of electrical isolation between said first and second input terminals; said mixing means comprising first and second diode chains, output means, and back-biasing means; said first and second diode chains each comprising a first capacitor, first and second diodes, and a second capacitor, the preceding four items coupled in series between said top and bottom drain junctions, said first and second diode chains being operative to conduct current in opposite directions; said output means comprising a junction between said first and second diodes in said first and second diode chains; said back-biasing means comprising resistors coupled between said first and second diode chains such that a DC current induced by said second input signal is effective to create a voltage across said first and second diode chains which back-biases said diodes; wherein said mixing means mixes said first and second input signals to produce an output signal at said output means.

Claim 8

A high level wideband self-biasing GaAs monolithic microwave integrated circuit for mixing large amplitude input signals at two frequencies to produce signals at a third frequency corresponding to sum and difference frequencies of the two input frequencies, said circuit comprising: mixing means, including first and second signal input means and signal output means; said first signal input means comprising a first pair of FETs each having a source electrode coupled to a first input terminal and each having a grounded gate electrode; said second signal input means comprising a second pair of FETs configured as an active balun, each FET of the second pair having a drain electrode coupled to the drain electrode of one FET of said first pair of FETs to form top and bottom drain junctions, and further, each FET of said second pair of FETs having one of its remaining electrodes coupled to a second input terminal; said first and second signal input means being effective to couple each of said first and second input signals to said top and bottom drain junctions while providing a high level of electrical isolation between said first and second input terminals; said mixing means comprising first and second diode chains, output means, and back-biasing means; said first and second diode chains each comprising a first capacitor, first and second diodes, and a second capacitor, the preceding four items coupled in series between said top and bottom drain junctions, said first and second diode chains being operative to conduct current in opposite directions; said output means comprising a junction between said first and second diodes in said first and second diode chains; said back-biasing means comprising resistors coupled between said first and second diode chains such that a DC current induced by said second input signal is effective to create a voltage across said first and second diode chains which back-biases said diodes; wherein said mixing means mixes said first and second input signals to produce an output signal at said output means.

Claim 9

The mixer circuit as described in claim 6, wherein said back-biasing means comprises first and second resistors; said first resistor coupling a junction between the first capacitor and the first diode of the first diode chain to a junction between the second diode and the second capacitor of the second diode chain; said second resistor coupling a junction between the second capacitor and the second diode of the first diode chain to a junction between the first capacitor and the first diode of the second diode chain.

Claim 10

A mixer circuit as described in claim 6, wherein said first input signal is a radio frequency (RF) signal and said second input signal is a local oscillator (LO) signal.