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Patent US5173089A successfully refreshed from Google Patents.
US5173089A
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Method for producing the polycrystalline diamond tool
Assignee: Sumitomo Electric Industries Ltd
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Filing: 1992-03-20
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Granted: 1992-12-22
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Expires: 2012-03-20
Abstract
Abstract The invention relates to a chemical vapor phase deposition method for producing a polycrystalline diamond tool comprising the steps of supplying material gas including a carbon-containing gas and hydrogen gas into a vacuum chamber, exciting the material gas into a state including plasma or radicals, introducing the material gas to a heated substrate, first depositing of diamond on the substrate with the material gas having a first density of carbon, a first density of oxygen and a first density of nitrogen, second depositing of diamond on the first deposited diamond with the material gas having a density of carbon higher than the first density of carbon, a density of oxygen lower than the first density of oxygen or a density of nitrogen higher than the first density of nitrogen till the diamond becomes more than 40 mu m in thickness, etching the substrate away from the deposited diamond by an etchant to obtain a diamond plate, metalizing the surface of the diamond plate which was grown in the second depositing step, and fixing the metalized surface on an end surface of a tool body to thereby obtain a diamond tool with a rake surface which was grown in the first depositing step and with a fixation surface which was grown in the second depositing step.
Inventors
- 👤 Keiichiro Tanabe
- 👤 Naoji Fujimori
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 19:05
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/26; C23C16/27; B; B23; B23B; B23B27/00; B23B27/14; B23B27/141; B23B27/145; C23C16/01; C23C16/271; C23C16/274; C23C16/276; C23C16/277; C23C16/278; C23C16/279; C23C30/00; C23C30/005; B23B2226/00; B23B2226/31; B23B2226/315; B23B2228/00; B23B2228/04
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
215 words
A chemical vapor phase deposition method for producing a polycrystalline diamond tool comprising the steps of: supplying material gas including a carbon-containing gas and hydrogen gas into a vacuum chamber; exciting the material gas into a state including one of plasma and radicals; introducing the material gas to a heated substrate; first depositing of diamond on the substrate, the material gas having a first density of carbon, a first density of oxygen and a first density of nitrogen; second depositing of diamond on the first deposited diamond, the material gas having at least one of a density of carbon higher than the first density of carbon, a density of oxygen lower than the first density of oxygen and a density of nitrogen higher than the first density of nitrogen till the diamond becomes more than 40 μm in thickness; etching the substrate away from the deposited diamond by an etchant to thereby obtain a diamond plate; metalizing a surface of the diamond plate which was grown in the second depositing step; and fixing the metalized surface on an end surface of a tool body to thereby obtain a diamond tool with a rake surface which was grown in the first depositing step and with a fixation surface which was grown in the second depositing step.
Claim 2
Dependent Claim
215 words
A chemical vapor phase deposition method for producing a polycrystalline diamond tool comprising the steps of: supplying material gas including a carbon-containing gas and hydrogen gas into a vacuum chamber; exciting the material gas into a state including one of plasma and radicals; introducing the material gas to a heated substrate; first depositing of diamond on the substrate, the material gas having a first density of carbon, a first density of oxygen and a first density of nitrogen; second depositing of diamond on the first deposited diamond, the material gas having at least one of a density of carbon higher than the first density of carbon, a density of oxygen lower than the first density of oxygen and a density of nitrogen higher than the first density of nitrogen till the diamond becomes more than 40 μm in thickness; etching the substrate away from the deposited diamond by an etchant to thereby obtain a diamond plate; metalizing a surface of the diamond plate which was grown in the second depositing step; and fixing the metalized surface on an end surface of a tool body to thereby obtain a diamond tool with a rake surface which was grown in the first depositing step and with a fixation surface which was grown in the second depositing step.
Claim 3
Dependent Claim
101 words
A method for producing a polycrystalline diamond tool as claimed in claim 1, wherein mol ratio (B 1 /A 1 ) of mol density (B 1 ) of a carbon-containing gas to mol density (A 1 ) of hydrogen gas in the material gas in the first depositing step in which the diamond is deposited to a certain thickness more than 12 μm is smaller than mol ratio (B 2 /A 2 ) of mol density (B 2 ) of the carbon-containing gas to mol density (A 2 ) of hydrogen gas in the material gas in the second depositing step.
Claim 4
Dependent Claim
47 words
A method as claimed in claim 1, wherein the material gas includes an oxygen-containing gas in the first depositing step in which the diamond is deposited to a certain thickness more than 12 μm and the material gas includes no oxygen-containing gas in the second depositing step.
Claim 5
Dependent Claim
47 words
A method as claimed in claim 1, wherein the material gas includes no nitrogen-containing gas in the first depositing step in which the diamond is deposited to a certain thickness more than 12 μm and the material gas includes a nitrogen-containing gas in the second depositing step.
Claim 6
Dependent Claim
22 words
A method as claimed in claim 1, wherein the carbon-including gas is either methane, ethane, acetylene, ethyl alcohol, methyl alcohol or acetone.
Claim 7
Dependent Claim
49 words
A method as claimed in claim 1, wherein the substrate is either W, Mo, Ta, Nb, Si, SiC, WC, W 2 C, Mo 2 C, TaC, Si 3 N 4 , AlN, Ti, TiC, TiN, B, BN, B 4 C, diamond, Al 2 O 3 or SiO 2 .
Claim 8
Dependent Claim
14 words
A method as claimed in claim 1, wherein the material gas includes rare gases.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-12-22 | 1996-06-22 | 1996-12-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-12-22 | 2000-06-22 | 2000-12-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-12-22 | 2004-06-22 | 2004-12-22 | $7700.00 | Window Closed / Lapsed |