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US5169684A
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US
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Wafer supporting jig and a decompressed gas phase growth method using such a jig
Assignee: Toyoko Kagaku Co Ltd
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Filing: 1990-05-25
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Granted: 1992-12-08
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Expires: 2010-05-25
Abstract
Abstract A there is disclosed a wafer supporting jig that allows formation of a film with an even thickness on a wafer as well as a decompressed gas-phase growth method utilizing such a jig. A wafer supporting jig according to the invention is realized in the form of a ring made of a heat-resistive material having a central opening.
Inventors
- 👤 Youji Takagi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 21:21
CPC Classifications
H; H10; H10P; H10P72/00; H10P72/10; H10P72/12; H10P72/123; C; C30; C30B; C30B25/00; C30B25/02; C30B25/12; C30B31/00; C30B31/06; C30B31/14; H10P72/127; H10P72/70; H10P72/76; H10P72/7604; H10P72/7611
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
115 words
A decompressed gas-phase growth method where a gas is introduced into a reaction tube containing a wafer and the reaction tube is heated from the exterior so as to grow a thin film on the wafer and a ring-shaped jig is utilized, the method comprising rigidly fitting said ring-shaped jig to a support pillar, said jig being in the general form of a ring with a central opening and being made of heat resistive material, said ring-shaped jig having a plurality of wafer supporting projections provided on an upper surface thereof for providing a space between the ring and a supported wafer, and placing a substrate wafer vis-a-vis said supporting projections of said ring-shaped jig.
Claim 2
Dependent Claim
115 words
A decompressed gas-phase growth method where a gas is introduced into a reaction tube containing a wafer and the reaction tube is heated from the exterior so as to grow a thin film on the wafer and a ring-shaped jig is utilized, the method comprising rigidly fitting said ring-shaped jig to a support pillar, said jig being in the general form of a ring with a central opening and being made of heat resistive material, said ring-shaped jig having a plurality of wafer supporting projections provided on an upper surface thereof for providing a space between the ring and a supported wafer, and placing a substrate wafer vis-a-vis said supporting projections of said ring-shaped jig.
Claim 3
Dependent Claim
22 words
A decompressed gas-phase growth method according to claim 1, wherein said ring-shaped jig has a substantially circular form with a straight portion.
Claim 4
Dependent Claim
33 words
A decompressed gas-phase growth method according to claim 1, wherein said ring-shaped jig has projections formed on a plurality of spots on said jig, each of said projections having a recessed inner surface.
Claim 5
Dependent Claim
33 words
A decompressed gas-phase growth method according to claim 1, wherein said ring-shaped jig is made of a heat resistive material selected from silicon carbide (SiC), alumina (Al 2 O 3 ) and ceramics.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-12-08 | 1996-06-08 | 1996-12-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-12-08 | 2000-06-08 | 2000-12-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-12-08 | 2004-06-08 | 2004-12-08 | $7700.00 | Window Closed / Lapsed |