US5169485A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for the preparation of epitaxial ferromagnetic manganese aluminum magnetic memory element
Assignee: University of Maryland, College Park
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Filing: 1991-03-07
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Granted: 1992-12-08
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Expires: 2011-03-07
Abstract
Abstract A non-volatile memory element based upon a thin epitaxial film of manganese aluminum upon a III-V semiconductor is described. The film is stable at elevated temperatures required for III-V semiconductor device processing, so permitting the monolithic integration of non-volatile memory elements with III-V semiconductor electronic and photonic devices.
Inventors
- 👤 Silas J. Allen, Jr.
- 👤 James P. Harbison
- 👤 Mark L. Leadbeater
- 👤 Ramamoorthy Ramesh
- 👤 Timothy D. Sands
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:25
CPC Classifications
C; C30; C30B; C30B1/00; C30B1/02; C30B1/023; B; B82; B82Y; B82Y25/00; C30B29/00; C30B29/10; C30B29/52; G; G11; G11C; G11C11/00; G11C11/02; G11C11/14; G11C11/18; H; H01; H01F; H01F10/00; H01F10/26; H01F10/32; H01F41/00; H01F41/32
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
123 words
Method for the growth of τ-MnAl on a III-V semiconductor substrate which comprises the steps of: (a) depositing a thin film of Mn and Al on a semiconductor surface at a temperature below 100° C. so as to form an amorphous layer with thickness between 0.3 and 5 nm; (b) heating the resultant amorphous layer to a temperature of the order of 100° C. to yield a monocrystalline template with the τ phase of manganese aluminum; (c) heating the template to a temperature within the range of 160°-210° C. and effecting co-deposition of manganese and aluminum to yield a final film of a thickness ranging film 3-59 nm; and (d) annealing the resultant film at a temperature of the order of 400° C.
Claim 2
Dependent Claim
123 words
Method for the growth of τ-MnAl on a III-V semiconductor substrate which comprises the steps of: (a) depositing a thin film of Mn and Al on a semiconductor surface at a temperature below 100° C. so as to form an amorphous layer with thickness between 0.3 and 5 nm; (b) heating the resultant amorphous layer to a temperature of the order of 100° C. to yield a monocrystalline template with the τ phase of manganese aluminum; (c) heating the template to a temperature within the range of 160°-210° C. and effecting co-deposition of manganese and aluminum to yield a final film of a thickness ranging film 3-59 nm; and (d) annealing the resultant film at a temperature of the order of 400° C.
Claim 3
Dependent Claim
13 words
Method in accordance with claim 1 wherein co-deposition is effected at 170° C.
Claim 4
Dependent Claim
14 words
Method in accordance with claim 1 wherein deposition is effected by molecular beam epitaxy.
Claim 5
Dependent Claim
15 words
Method in accordance with claim 1 wherein deposition is effected by chemical vapor deposition techniques.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-12-08 | 1996-06-08 | 1996-12-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-12-08 | 2000-06-08 | 2000-12-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-12-08 | 2004-06-08 | 2004-12-08 | $7700.00 | Window Closed / Lapsed |