Patent US5168341A successfully refreshed from Google Patents.
US5168341A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Bipolar-cmos integrated circuit having a structure suitable for high integration
Assignee: NEC Electronics Corp
•
Filing: 1991-03-27
•
Granted: 1992-12-01
•
Expires: 2011-03-27
Abstract
Abstract Herein disclosed is a bipolar-CMOS semiconductor circuit having a semiconductor substrate, an N - epitaxial layer formed on the semiconductor substrate, an N well formed in the N - epitaxial layer, a P well formed in the N - epitaxial layer, a power supply terminal to which the positive potential is to be supplied, a ground potential terminal, an input terminal, an output terminal, an NPN bipolar transistor formed in the N - epitaxial layer, the NPN bipolar transistor having the N - epitaxial layer as the collector thereof and having an emitter connected to the output terminal, a P-channel type MOS transistor formed in the N well and being connected between the power supply terminal and the base of the NPN bipolar transistor, the gate of the P-channel type MOS transistor being connected to the input terminal, and both the N well for the P-channel type MOS transistor and the N - epitaxial layer as the collector of the NPN bipolar transistor being connected to the power supply terminal, and an N-channel type MOS transistor formed in the P well and being connected between the output terminal and the ground potential terminal, the gate of the N-channel type MOS transistor being connected to the input terminal.
Inventors
- 👤 Kouichi Kumagai
- 👤 Kenji Yoshida
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 18:38
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/40; H10D84/401
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
150 words
A semiconductor device comprising: a substrate having a first semiconductor layer formed thereon; a first semiconductor region formed in said layer and on a first portion of said substrate and having a first conductivity type; a second semiconductor region formed in said layer and on a second portion of said substrate and having a second conductivity type; a first channel type MOS transistor formed in said second semiconductor region; a second channel type MOS transistor formed in said first semiconductor region; a bipolar transistor formed in a remaining portion of said first semiconductor region, said bipolar transistor having said first semiconductor region as the collector thereof; a resistor formed in said remaining portion of said first semiconductor region with said second conductivity type as an extended portion of a base region of said bipolar transistor; and a power supply means for supplying a fixed potential to said first semiconductor region.
Claim 2
Dependent Claim
150 words
A semiconductor device comprising: a substrate having a first semiconductor layer formed thereon; a first semiconductor region formed in said layer and on a first portion of said substrate and having a first conductivity type; a second semiconductor region formed in said layer and on a second portion of said substrate and having a second conductivity type; a first channel type MOS transistor formed in said second semiconductor region; a second channel type MOS transistor formed in said first semiconductor region; a bipolar transistor formed in a remaining portion of said first semiconductor region, said bipolar transistor having said first semiconductor region as the collector thereof; a resistor formed in said remaining portion of said first semiconductor region with said second conductivity type as an extended portion of a base region of said bipolar transistor; and a power supply means for supplying a fixed potential to said first semiconductor region.
Claim 3
Dependent Claim
20 words
A semiconductor device as recited in claim 1, wherein said substrate is a semiconductor substrate of said first conductivity type.
Claim 4
Dependent Claim
20 words
A semiconductor device as recited in claim 1, wherein said substrate is a semiconductor substrate of said second conductivity type.
Claim 5
Dependent Claim
86 words
A semiconductor device as recited in claim 3, further comprising a first conductivity type buried layer and a second conductivity type buried layer, said first conductivity type buried layer being formed between said substrate and said first semiconductor region and having an impurity concentration which is higher than that of said first semiconductor region, and said second conductivity type buried layer being formed between said substrate and said second semiconductor region and having an impurity concentration which is higher than that of said second semiconductor region.
Claim 6
Dependent Claim
19 words
A semiconductor device as recited in claim 1, wherein said fixed potential is positive with reference to ground potential.
Claim 7
Dependent Claim
23 words
A semiconductor device as recited in claim 5, wherein said fixed potential is the highest potential among potentials applied to said semiconductor device.
Claim 8
Dependent Claim
204 words
A bipolar-CMOS semiconductor circuit comprising: a substrate; a semiconductor layer formed on a first portion of said substrate, said semiconductor layer being of a first conductivity type; a semiconductor region formed on a second portion of said substrate, said semiconductor region being of a second conductivity type which is opposite to said first conductivity type; a first power terminal; a second power terminal; an input terminal; an output terminal; a bipolar transistor formed in said semiconductor layer, said bipolar transistor having said semiconductor layer as the collector thereof, and having an emitter-collector current path coupled between said first power terminal and said output terminal; a first MOS transistor formed in said semiconductor region, said first MOS transistor having a first source-drain current path coupled between said output terminal and said second power terminal, and said first source-drain current path being controlled in response to an input signal applied to said input terminal; and a second MOS transistor formed in said semiconductor layer, said second MOS transistor having a second source-drain current path coupled between said first power terminal and a base of said bipolar transistor, and said second source-drain current path being controlled in response to said input signal applied to said input terminal.
Claim 9
Dependent Claim
204 words
A bipolar-CMOS semiconductor circuit comprising: a substrate; a semiconductor layer formed on a first portion of said substrate, said semiconductor layer being of a first conductivity type; a semiconductor region formed on a second portion of said substrate, said semiconductor region being of a second conductivity type which is opposite to said first conductivity type; a first power terminal; a second power terminal; an input terminal; an output terminal; a bipolar transistor formed in said semiconductor layer, said bipolar transistor having said semiconductor layer as the collector thereof, and having an emitter-collector current path coupled between said first power terminal and said output terminal; a first MOS transistor formed in said semiconductor region, said first MOS transistor having a first source-drain current path coupled between said output terminal and said second power terminal, and said first source-drain current path being controlled in response to an input signal applied to said input terminal; and a second MOS transistor formed in said semiconductor layer, said second MOS transistor having a second source-drain current path coupled between said first power terminal and a base of said bipolar transistor, and said second source-drain current path being controlled in response to said input signal applied to said input terminal.
Claim 10
Dependent Claim
23 words
A bipolar-CMOS transistor as recited in claim 7, further comprising a resistor coupled between said emitter and said base of said bipolar transistor.
Claim 11
Dependent Claim
17 words
A bipolar-CMOS transistor as recited in claim 8, wherein said resistor is formed in said semiconductor layer.
Claim 12
Dependent Claim
69 words
A bipolar-CMOS transistor as recited in claim 7, further comprising a second semiconductor region formed in said semiconductor layer, said second semiconductor region being of said first conductivity type and having an impurity concentration higher than that of said semiconductor layer, said second MOS transistor being formed in said second semiconductor region, and said second semiconductor region and said semiconductor layer being electrically connected to said first power terminal.
Claim 13
Dependent Claim
20 words
A bipolar-CMOS transistor as recited in claim 7, wherein said substrate is a semiconductor substrate of said first conductivity type.
Claim 14
Dependent Claim
20 words
A bipolar-CMOS transistor as recited in claim 7, wherein said substrate is a semiconductor substrate of said second conductivity type.
Claim 15
Dependent Claim
56 words
A bipolar-CMOS transistor as recited in claim 7, wherein said first conductivity type is an N conductivity type, said second conductivity type is a P conductivity type, said bipolar transistor is an NPN bipolar transistor, said first MOS transistor is an N-channel type MOS transistor and said second MOS transistor is a P-channel type MOS transistor.
Claim 16
Dependent Claim
56 words
A bipolar-CMOS transistor as recited in claim 9, wherein said first conductivity type is an N conductivity type, said second conductivity type is a P conductivity type, said bipolar transistor is an NPN bipolar transistor, said first MOS transistor is an N-channel type MOS transistor and said second MOS transistor is a P-channel type MOS transistor.
Claim 17
Dependent Claim
56 words
A bipolar-CMOS transistor as recited in claim 10, wherein said first conductivity type is an N conductivity type, said second conductivity type is a P conductivity type, said bipolar transistor is an NPN bipolar transistor, said first MOS transistor is an N-channel type MOS transistor and said second MOS transistor is a P-channel type MOS transistor.
Claim 18
Dependent Claim
56 words
A bipolar-CMOS transistor as recited in claim 11, wherein said first conductivity type is an N conductivity type, said second conductivity type is a P conductivity type, said bipolar transistor is an NPN bipolar transistor, said first MOS transistor is an N-channel type MOS transistor and said second MOS transistor is a P-channel type MOS transistor.
Claim 19
Dependent Claim
56 words
A bipolar-CMOS transistor as recited in claim 12, wherein said first conductivity type is an N conductivity type, said second conductivity type is a P conductivity type, said bipolar transistor is an NPN bipolar transistor, said first MOS transistor is an N-channel type MOS transistor and said second MOS transistor is a P-channel type MOS transistor.
Claim 20
Dependent Claim
34 words
A bipolar-CMOS transistor as recited in claim 7, wherein a positive potential is to be supplied to said first power terminal and the ground potential is to be supplied to said second power terminal.
Claim 21
Dependent Claim
34 words
A bipolar-CMOS transistor as recited in claim 13, wherein a positive potential is to be supplied to said first power terminal and the ground potential is to be supplied to said second power terminal.
References Cited (Backward Citations)
US5001366A
Cited
US4957874A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-12-01 | 1996-06-01 | 1996-12-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-12-01 | 2000-06-01 | 2000-12-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-12-01 | 2004-06-01 | 2004-12-01 | $7700.00 | Window Closed / Lapsed |