Thermoelectric semiconductor having a porous structure deaerated in a vacuum and thermoelectric panel using p-type and n-type thermoelectric semiconductors

Claim 2

A thermoelectric semiconductor device in which p-type and n-type thermoelectric semiconductor elements are electrically connected alternatively in series to form p-n junctions for causing energy conversions between thermal energy and electrical energy characterized in that each of said p-type and n-type thermoelectric semiconductor elements consists of a porous material.

Claim 3

The thermoelectric semiconductor device as claimed in claim 1 in which a volume percentage of pores to said semiconductor is 5% or more.

Claim 4

A thermoelectric semiconductor device in which a plurality of p-type and n-type thermoelectric semiconductor elements are arranged in a two-dimensional configuration and electrically connected alternatively in series to form p-n and junctions for causing energy conversions between thermal and electrical energy characterized in that said p-type and n-type thermoelectric semiconductor elements are porous materials arranged with a space between them and every space is filled with an adiabatic insulation inorganic porous powdered material.

Claim 5

A thermoelectric semiconductor device in which a plurality of p-type and n-type thermoelectric semiconductor elements are arranged in a two-dimensional configuration and electrically connected alternatively in series to form p-n and junctions for causing energy conversions between thermal and electrical energy characterized in that said p-type and n-type thermoelectric semiconductor elements are porous materials arranged with a space between them and every space is filled with an adiabatic insulation inorganic porous powdered material.

Claim 6

A thermoelectric semiconductor device in which a plurality of p-type and n-type thermoelectric semiconductor elements are arranged in a two-dimensional configuration and electrically connected alternatively in series to form p-n junctions for causing energy conversions between thermal and electrical energy characterized in that spaces existing among said p-type and n-type semiconductor elements are deaerated into a vacuum.

Claim 7

A thermoelectric semiconductor device in which a plurality of p-type and n-type thermoelectric semiconductor elements are arranged in a two-dimensional configuration and electrically connected alternatively in series to form p-n junctions for causing energy conversions between thermal and electrical energy characterized in that spaces existing among said p-type and n-type semiconductor elements are deaerated into a vacuum.

Claim 8

A thermoelectric semiconductor device in which a plurality of p-type and n-type thermoelectric semiconductor elements are arranged in a two-dimensional configuration and electrically connected alternatively in series to form p-n junctions for causing energy conversions between thermal and electrical energy characterized in that spaces existing among said p-type and n-type semiconductor elements are filled with an inorganic insulation material and deaerated into a vacuum of 1 mmHg or less.

Claim 9

A thermoelectric semiconductor device in which a plurality of p-type and n-type thermoelectric semiconductor elements are arranged in a two-dimensional configuration and electrically connected alternatively in series to form p-n junctions for causing energy conversions between thermal and electrical energy characterized in that spaces existing among said p-type and n-type semiconductor elements are filled with an inorganic insulation material and deaerated into a vacuum of 1 mmHg or less.

Claim 10

The thermoelectric semiconductor device as claimed in claim 5 in which said inorganic insulation material is porous.

Claim 11

The thermoelectric semiconductor device as claimed in claim 5 in which said inorganic insulation material is a powder.

Claim 12

A thermoelectric semiconductor device in which a plurality of p-type and n-type thermoelectric semiconductor elements are arranged in a two-dimensional configuration and electrically connected alternatively in series to form p-n junctions for causing energy conversions between thermal energy and electrical energy characterized in that each of said p-type and n-type thermoelectric semiconductor elements consists of a porous material; that spaces existing among said p-type and n-type semiconductor elements are filled with an inorganic insulation material; and that pores in each of said p-type and n-type thermoelectric semiconductor elements are deaerated into a vacuum of 1 mmHg or less.

Claim 13

A thermoelectric semiconductor device in which a plurality of p-type and n-type thermoelectric semiconductor elements are arranged in a two-dimensional configuration and electrically connected alternatively in series to form p-n junctions for causing energy conversions between thermal energy and electrical energy characterized in that each of said p-type and n-type thermoelectric semiconductor elements consists of a porous material; that spaces existing among said p-type and n-type semiconductor elements are filled with an inorganic insulation material; and that pores in each of said p-type and n-type thermoelectric semiconductor elements are deaerated into a vacuum of 1 mmHg or less.

Claim 14

The thermoelectric semiconductor device as claimed in claim 8 in which said inorganic insulation material is a porous material and pores in said material are deaerated into a vacuum equal to 1 mmHg or less.

Claim 15

The thermoelectric semiconductor device as claimed in claim 8 in which said inorganic insulation material is a powder.

Claim 16

An electronic refrigeration panel in which p-type and n-type semiconductor elements are electrically connected alternatively in series to form p-n junctions for causing energy conversions between thermal energy and electrical energy characterized in that each of said p-type and n-type semiconductor elements is comprised of semiconductor layers formed on surfaces of support particles and wherein said elements are in contact with each other.

Claim 17

An electronic refrigeration panel in which p-type and n-type semiconductor elements are electrically connected alternatively in series to form p-n junctions for causing energy conversions between thermal energy and electrical energy characterized in that each of said p-type and n-type semiconductor elements is comprised of semiconductor layers formed on surfaces of support particles and wherein said elements are in contact with each other.

Claim 18

The electronic refrigeration panel as claimed in claim 11 in which said semiconductor layers form a continuous sintered layer.

Claim 19

The electronic refrigeration panel as claimed in claim 11 in which said support particles are hollow particles.

Claim 20

The electronic refrigeration panel as claimed in claim 11 in which said support particles are porous particles.

Claim 21

A thermoelectric semiconductor device having a semiconductor block consisted of a porous body and electrodes formed on upper and lower end surfaces of said block being characterized in that said electrodes are made of an air-tight metal; that side surfaces of said block are coated with an air-tight insulation material; and that said semiconductor block has been deaerated.

Claim 22

A thermoelectric semiconductor device having a semiconductor block consisted of a porous body and electrodes formed on upper and lower end surfaces of said block being characterized in that said electrodes are made of an air-tight metal; that side surfaces of said block are coated with an air-tight insulation material; and that said semiconductor block has been deaerated.

Claim 23

The thermoelectric semiconductor device as claimed in claim 15 in which said porous body is comprised of gas permeable support particles and a gas permeable thermoelectric semiconductive material supported by said support particles.

Claim 24

A thermoelectric semiconductor device comprising a pair of p-type and n-type semiconductor blocks each consisted of a porous body being characterized in that an insulation sheet material is inserted between said pair of p-type and n-type semiconductor blocks; that said pair of p-type and n-type semiconductor blocks are electrically connected by a common electrode of an air-tight metal at one end thereof and, at another end thereof, each of said p-type and n-type semiconductor blocks is covered by an electrode of an air-tight metal; that surfaces of said pair of p-type and n-type semiconductor blocks are covered by an air-tight insulation material; and that said pair of p-type and n-type semiconductor blocks are kept in a deaerated state.

Claim 25

A thermoelectric semiconductor device comprising a pair of p-type and n-type semiconductor blocks each consisted of a porous body being characterized in that an insulation sheet material is inserted between said pair of p-type and n-type semiconductor blocks; that said pair of p-type and n-type semiconductor blocks are electrically connected by a common electrode of an air-tight metal at one end thereof and, at another end thereof, each of said p-type and n-type semiconductor blocks is covered by an electrode of an air-tight metal; that surfaces of said pair of p-type and n-type semiconductor blocks are covered by an air-tight insulation material; and that said pair of p-type and n-type semiconductor blocks are kept in a deaerated state.

Claim 26

The thermoelectric semiconductor device as claimed in claim 17 in which said porous body is comprised of gas permeable support particles and a gas permeable thermoelectric semiconductive material supported by said support particles.

Claim 27

The thermoelectric semiconductor device as claimed in claim 17 in which said insulation sheet material is gas-permeable.

Claim 28

A thermoelectric semiconductor device comprising: an assembly of p-type and n-type semiconductor blocks arranged alternatively in a two-dimensional configuration, said each semiconductor block being porous and having electrodes of an air-tight metal material formed on both end surfaces thereof and side surfaces thereof being covered with an insulation material; junction electrodes formed on upper and lower surfaces of said assembly of p-type and n-type semiconductor blocks each of which is made of an air-tight metal material and connects said electrodes of a pair of said p-type and n-type semiconductor blocks at each end surface of said assembly in such a manner that said p-type and n-type semiconductor blocks are electrically connected alternatively in series; and an air-tight insulation material covering outer surfaces of said assembly not covered by said junction electrodes, said air-tight insulation material and said junction electrodes maintaining said assembly in a deaerated state.

Claim 29

A thermoelectric semiconductor device comprising: an assembly of p-type and n-type semiconductor blocks arranged alternatively in a two-dimensional configuration, said each semiconductor block being porous and having electrodes of an air-tight metal material formed on both end surfaces thereof and side surfaces thereof being covered with an insulation material; junction electrodes formed on upper and lower surfaces of said assembly of p-type and n-type semiconductor blocks each of which is made of an air-tight metal material and connects said electrodes of a pair of said p-type and n-type semiconductor blocks at each end surface of said assembly in such a manner that said p-type and n-type semiconductor blocks are electrically connected alternatively in series; and an air-tight insulation material covering outer surfaces of said assembly not covered by said junction electrodes, said air-tight insulation material and said junction electrodes maintaining said assembly in a deaerated state.

Claim 30

The thermoelectric semiconductor device as claimed in claim 20 in which said each semiconductor block is consisted of gas permeable support particles and a gas permeable thermoelectric semiconductive material supported by said support particles.

Claim 31

The thermoelectric semiconductor device as claimed in claim 20 in which said insulation material covering side surfaces of said each semiconductor block is gas permeable.

Claim 32

A thermoelectric semiconductor device comprising: a support block consisted of a porous material; a thermoelectric semiconductive layer formed on an outer surface of said support block, electrodes made of an air-tight metal material and formed on the upper and lower surfaces of said thermoelectric semiconductive layer; and an air-tight insulation layer formed on side surfaces of said thermoelectric semiconductive layer; in which said support block is kept in a deaerated state by said electrodes and said air-tight insulation layer.

Claim 33

A thermoelectric semiconductor device comprising: a support block consisted of a porous material; a thermoelectric semiconductive layer formed on an outer surface of said support block, electrodes made of an air-tight metal material and formed on the upper and lower surfaces of said thermoelectric semiconductive layer; and an air-tight insulation layer formed on side surfaces of said thermoelectric semiconductive layer; in which said support block is kept in a deaerated state by said electrodes and said air-tight insulation layer.

Claim 34

A thermoelectric semiconductor device comprising a pair of p-type and n-type semiconductor blocks being characterized in that each of said pair of p-type and n-type semiconductor blocks is consisted of a support block made of a porous material and a thermoelectric semiconductive layer formed supported by said support block; that an insulation sheet material is inserted between said pair of p-type and n-type semiconductor blocks; that said pair of p-type and n-type semiconductor blocks are electrically connected by a common electrode of an air-tight metal at one end thereof and, at another end thereof, each of said p-type and n-type semiconductor blocks is covered by an electrode of an air-tight metal; that surfaces of said pair of p-type and n-type semiconductor blocks are covered by an air-tight insulation material; and that said pair of p-type and n-type semiconductor blocks are kept in a deaerated state.

Claim 35

A thermoelectric semiconductor device comprising a pair of p-type and n-type semiconductor blocks being characterized in that each of said pair of p-type and n-type semiconductor blocks is consisted of a support block made of a porous material and a thermoelectric semiconductive layer formed supported by said support block; that an insulation sheet material is inserted between said pair of p-type and n-type semiconductor blocks; that said pair of p-type and n-type semiconductor blocks are electrically connected by a common electrode of an air-tight metal at one end thereof and, at another end thereof, each of said p-type and n-type semiconductor blocks is covered by an electrode of an air-tight metal; that surfaces of said pair of p-type and n-type semiconductor blocks are covered by an air-tight insulation material; and that said pair of p-type and n-type semiconductor blocks are kept in a deaerated state.

Claim 36

A thermoelectric semiconductor device comprising an assembly of p-type and n-type semiconductor blocks arranged alternatively in a rectangular configuration, said each semiconductor block being consisted of a support block made of a porous material and a thermoelectric semiconductive layer formed supported on an outer surface of said support block and side surfaces of said each semiconductor block being covered by an air-tight insulation layer; junction electrodes formed on upper and lower surfaces of said assembly of p-type and n-type semiconductor blocks each of which is made of an air-tight metal material and electrically connects each one end of a pair of p-type and n-type semiconductor blocks in such a manner that said p-type and n-type semiconductor blocks are electrically connected alternatively in series; and an air-tight insulation material covering outer surfaces of said assembly not covered by said junction electrodes; said air-tight insulation material and said junction electrodes maintaining said assembly in a deaerated state.

Claim 37

A thermoelectric semiconductor device comprising an assembly of p-type and n-type semiconductor blocks arranged alternatively in a rectangular configuration, said each semiconductor block being consisted of a support block made of a porous material and a thermoelectric semiconductive layer formed supported on an outer surface of said support block and side surfaces of said each semiconductor block being covered by an air-tight insulation layer; junction electrodes formed on upper and lower surfaces of said assembly of p-type and n-type semiconductor blocks each of which is made of an air-tight metal material and electrically connects each one end of a pair of p-type and n-type semiconductor blocks in such a manner that said p-type and n-type semiconductor blocks are electrically connected alternatively in series; and an air-tight insulation material covering outer surfaces of said assembly not covered by said junction electrodes; said air-tight insulation material and said junction electrodes maintaining said assembly in a deaerated state.