US5166888A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Fabrication of particle beam masks
Assignee: International Business Machines Corp
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Filing: 1990-12-11
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Granted: 1992-11-24
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Expires: 2010-12-11
Abstract
Abstract A method for automatically splitting a layout of a hole pattern into two complementary arrangements for x-ray, electron beam, ion beams, i.e., particle beam masks. The method determines all inside and outside corners of said pattern and determining a stability value for the pattern so the pattern can be divided into stable sections and alternately distributed over two complementary masks.
Inventors
- 👤 Helmut Engelke
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 17:59
CPC Classifications
G; G03; G03F; G03F1/00; G03F1/20; H; H10; H10P; H10P76/00; H10P76/20; H10P76/204; H10P76/2045; H10P76/2047
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
157 words
A method of splitting a layout of a hole pattern having a plurality of edges and having inside corners and outside corners so as to be able to form complementary self-supporting semiconductor masks, said method comprising: determining all inside and outside corners of said pattern, assigning a stability value to each of said inside corners which is a function of the length of the perimeter of all edges between adjacent outside corners, and the length of the shortest distance between the adjacent outside corners, comparing the stability value of each inside corner with a pre-established stability limit function which is dependent on the physical characteristics of the masks being formed, partitioning each pattern into a plurality of sections by providing cutting lines running from any inside corner with said assigned stability value below said stability limit function to an opposing edge of said pattern, and establishing said two masks by distributing said sections alternatively across said masks.
Claim 2
Independent Claim
157 words
A method of splitting a layout of a hole pattern having a plurality of edges and having inside corners and outside corners so as to be able to form complementary self-supporting semiconductor masks, said method comprising: determining all inside and outside corners of said pattern, assigning a stability value to each of said inside corners which is a function of the length of the perimeter of all edges between adjacent outside corners, and the length of the shortest distance between the adjacent outside corners, comparing the stability value of each inside corner with a pre-established stability limit function which is dependent on the physical characteristics of the masks being formed, partitioning each pattern into a plurality of sections by providing cutting lines running from any inside corner with said assigned stability value below said stability limit function to an opposing edge of said pattern, and establishing said two masks by distributing said sections alternatively across said masks.
Claim 3
Dependent Claim
56 words
The method of claim 1 wherein said step of assigning a stability value to each of said inside corners comprises, adding the lengths of the perimeter of all edges between adjacent outside corners, ascertaining the length of the shortest distance of said adjacent outside corners, and dividing said distance by the sum of the added lengths.
Claim 4
Dependent Claim
21 words
The method of claim 2 wherein said stability limit function increases, when said distance of said two adjacent outside corners increases.
Claim 5
Dependent Claim
83 words
A method of claim 1 wherein said step of partitioning said pattern comprises: planning pairs of rectangular cutting lines running from any one of said inside corners to one of said opposing edges, respectively, assembling one or more sets of cutting lines which incorporate one cutting line of each of said pairs of cutting lines, respectively, and in which said cutting lines do not intersect, and selecting that set of cutting lines which has the shortest length of all cutting lines summed up.
Claim 6
Dependent Claim
56 words
The method of claim 1 wherein said step of partitioning said pattern comprises: determining all sections with a surface area exceeding a given value, and partitioning each of said sections into sub-sections by providing additional cutting lines which run between two of said cutting lines of said sections and which do not intersect any other cutting
Claim 7
Dependent Claim
44 words
The method of claim 1 wherein: said partitioning step includes determining the number of sections into which the pattern is positioned, determining if said number is divisible by two and further providing additional cutting lines to create a number of sections divisible by two.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-11-24 | 1996-05-25 | 1996-11-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-11-24 | 2000-05-25 | 2000-11-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-11-24 | 2004-05-25 | 2004-11-24 | $7700.00 | Window Closed / Lapsed |