US5166761A
Expired / Lapsed
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Tunnel junction multiple wavelength light-emitting diodes
Assignee: Midwest Research Institute
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Filing: 1991-04-01
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Granted: 1992-11-24
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Expires: 2011-04-01
Abstract
Abstract A multiple wavelength LED having a monolithic cascade cell structure comprising at least two p-n junctions, wherein each of said at least two p-n junctions have substantially different band gaps, and electrical connector means by which said at least two p-n junctions may be collectively energized; and wherein said diode comprises a tunnel junction or interconnect.
Inventors
- 👤 Jerry M. Olson
- 👤 Sarah R. Kurtz
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 14:54
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/14; H10F10/142; H10F10/16; H10F10/161; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/811; H10H20/813; H10H20/822; H10H20/824; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/544
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
68 words
A multiple wavelength light-emitting diode having a monolithic cascade cell structure comprising: diodes having at least two p-n junctions, wherein each of said at least two p-n junction diodes are top and bottom cells having substantially different band gaps; electrical connector means by which said at least two p-n junctions may be collectively energized; and a transparent tunnel p-n junction interconnecting said diodes of substantially different band gaps.
Claim 2
Dependent Claim
68 words
A multiple wavelength light-emitting diode having a monolithic cascade cell structure comprising: diodes having at least two p-n junctions, wherein each of said at least two p-n junction diodes are top and bottom cells having substantially different band gaps; electrical connector means by which said at least two p-n junctions may be collectively energized; and a transparent tunnel p-n junction interconnecting said diodes of substantially different band gaps.
Claim 3
Dependent Claim
20 words
A diode structure as in claim 1, wherein said monolithic cascade cell structure comprises GaInP 2 /GaAs as top/bottom cells.
Claim 4
Dependent Claim
16 words
The diode of claim 1, wherein said monolithic cascade cell structure comprises AlGaInP/GaAs as top/bottom cells.
Claim 5
Dependent Claim
47 words
The diode of claim 1, wherein said diode is a two-terminal monolithic cell and said structure consists of Ga 0 .5 In 0 .5 P grown epitaxially upon GaAs as a bottom cell, and said transparent tunnel junction is of GaInP n + /GaAs p + .
Claim 6
Dependent Claim
46 words
The diode of claim 1, wherein said diode is a two-terminal monolithic cell structure that consists of Ga 0 .5 In 0 .5 P grown epitaxially upon GaAs as a bottom cell, and said transparent tunnel junction is of GaAs n + /GaAs p + .
Claim 7
Dependent Claim
18 words
The diode of claim 2, wherein the tunnel p-n junction is GaAs n + /GaAs p + .
Claim 8
Dependent Claim
18 words
The diode of claim 3, wherein the tunnel p-n junction is GaAs n + /GaAs p + .
Claim 9
Dependent Claim
18 words
The diode of claim 4, wherein the tunnel p-n junction if GaAs n + /GaAs p + .
Claim 10
Dependent Claim
75 words
The diode of claim 1, comprising: a top cell of n-AlInP 2 of about 0.03 μm thickness, n-GaInP 2 of about 0.1 μm thickness and p-GaInP 2 of about 0.7 μm thickness; a tunnel junction of p+GaAs of between about 0.01-0.02 μm thickness and n+GaAs of between about 0.01-0.02 μm thickness; and a bottom cell of n-AlGaAs of about 0.1 μm thickness, n-GaAs of about 0.1 μm thickness and p-GaAs of about 3.5 μm thickness.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1995-11-24 | 1996-05-25 | 1996-11-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-11-24 | 2000-05-25 | 2000-11-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-11-24 | 2004-05-25 | 2004-11-24 | $7700.00 | Window Closed / Lapsed |