Patent US5166760A successfully refreshed from Google Patents.
US5166760A
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Semiconductor Schottky barrier device with pn junctions
Assignee: Hitachi Ltd
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Filing: 1992-02-11
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Granted: 1992-11-24
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Expires: 2012-02-11
Abstract
Abstract A semiconductor device is provided wherein a first diode having a pn junction and a second diode having a combination of a Schottky barrier and a pn junction in a current-passing direction are provided side by side in a direction perpendicular to the current-passing direction. When a forward current with a current density J F is passed into the second diode, the relation ##EQU1## is established in a forward voltage V F range of 0.1 (V) to 0.3 (V), where k represents the Boltzmann constant (≈1.38×10 -23 J/K), T represents the absolute temperature, and q represents the quantity of electron charges (≈1.6×10 -19 C). The first diode can have a first semiconductor region of one conductivity type and a second semiconductor region of the other conductivity type adjacent to the first semiconductor region to form a pn junction therebetween, so as to be in ohmic contact with one main electrode, and so as to have an impurity concentration higher than that of the first semiconductor region. The second diode can be formed by the first semiconductor region of the one conductivity type and a third semiconductor region of the other conductivity type analogously as above.
Inventors
- 👤 Mutsuhiro Mori
- 👤 Yasumiti Yasuda
- 👤 Naoki Sakurai
- 👤 Hidetoshi Arakawa
- 👤 Hiroshi Owada
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 14:13
CPC Classifications
H; H02; H02M; H02M7/00; H02M7/42; H02M7/44; H02M7/48; H02M7/483; H02M7/487; H02M7/003; H03; H03K; H03K17/00; H03K17/08; H03K17/081; H03K17/0814; H03K17/08148; H10; H10D; H10D8/00; H10D8/60; H10W; H10W90/00; H10W72/00; H10W72/50; H10W72/531; H10W72/5363; H10W72/59; H10W72/90; H10W72/931; H10W72/934; H10W72/951; H10W72/952; Y; Y10; Y10S; Y10S257/00; Y10S257/927; Y10S257/928
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
163 words
A semiconductor module having a parallel connection of an insulated gate bipolar transistor and a diode between a pair of terminals therefor, characterized in that the diode comprises: a first semiconductor region of a first conductivity type having a main surface; a second semiconductor region of a second conductivity type extending from a plurality of selected portions of said main surface into the inside of said first semiconductor region; a third semiconductor region of the second conductivity type extending from said main surface into the inside of said first semiconductor region and across adjacent portions of said second semiconductor region, said third semiconductor region having a depth smaller than that of said second semiconductor region; a first electrode formed on said main surface so as to form an ohmic junction with said second semiconductor region and to form a Schottky junction with said third semiconductor region; and a second electrode provided so as to form an ohmic junction with said first semiconductor region.
Claim 2
Dependent Claim
163 words
A semiconductor module having a parallel connection of an insulated gate bipolar transistor and a diode between a pair of terminals therefor, characterized in that the diode comprises: a first semiconductor region of a first conductivity type having a main surface; a second semiconductor region of a second conductivity type extending from a plurality of selected portions of said main surface into the inside of said first semiconductor region; a third semiconductor region of the second conductivity type extending from said main surface into the inside of said first semiconductor region and across adjacent portions of said second semiconductor region, said third semiconductor region having a depth smaller than that of said second semiconductor region; a first electrode formed on said main surface so as to form an ohmic junction with said second semiconductor region and to form a Schottky junction with said third semiconductor region; and a second electrode provided so as to form an ohmic junction with said first semiconductor region.
Claim 3
Dependent Claim
296 words
A semiconductor module having a parallel connection of an insulated gate bipolar transistor and a diode between a pair of terminals therefor, characterized in that the diode comprises: a semiconductor substrate having a pair of first and second main surfaces opposite to each other and having, between said pair of main surfaces, a first semiconductor region of a first conductivity type adjacent to said first main surface, a second semiconductor region of the first conductivity type adjacent to both said first semiconductor region and said second main surface and having an impurity concentration lower than that of said first semiconductor region, a third semiconductor region of a second conductivity type extending from said second main surface into the inside of said second semiconductor region so as to form small areas and an annular are surrounding said small areas, and having an impurity concentration higher than that of said second semiconductor region, and a fourth semiconductor region of the second semiconductor type extending from said second main surface into the inside of said second semiconductor region so as to be located on portions of said second semiconductor region which are exposed among said small and annular areas of said third semiconductor region, said fourth semiconductor region having a thickness thinner than that of said third semiconductor region and having an impurity concentration lower than that of said third semiconductor region; a first electrode provided at said first main surface of said semiconductor substrate so as to be in ohmic contact with said first semiconductor region; and a second electrode provided at said second main surface of said semiconductor substrate so as to be in ohmic contact with said third semiconductor region and so as to be in contact through a Schottky barrier with said third semiconductor region.
Claim 4
Dependent Claim
296 words
A semiconductor module having a parallel connection of an insulated gate bipolar transistor and a diode between a pair of terminals therefor, characterized in that the diode comprises: a semiconductor substrate having a pair of first and second main surfaces opposite to each other and having, between said pair of main surfaces, a first semiconductor region of a first conductivity type adjacent to said first main surface, a second semiconductor region of the first conductivity type adjacent to both said first semiconductor region and said second main surface and having an impurity concentration lower than that of said first semiconductor region, a third semiconductor region of a second conductivity type extending from said second main surface into the inside of said second semiconductor region so as to form small areas and an annular are surrounding said small areas, and having an impurity concentration higher than that of said second semiconductor region, and a fourth semiconductor region of the second semiconductor type extending from said second main surface into the inside of said second semiconductor region so as to be located on portions of said second semiconductor region which are exposed among said small and annular areas of said third semiconductor region, said fourth semiconductor region having a thickness thinner than that of said third semiconductor region and having an impurity concentration lower than that of said third semiconductor region; a first electrode provided at said first main surface of said semiconductor substrate so as to be in ohmic contact with said first semiconductor region; and a second electrode provided at said second main surface of said semiconductor substrate so as to be in ohmic contact with said third semiconductor region and so as to be in contact through a Schottky barrier with said third semiconductor region.
Claim 5
Dependent Claim
290 words
A semiconductor module having a parallel connection of an insulated gate bipolar transistor and a diode between a pair of terminals thereof, characterized in that the diode comprises: a first semiconductor region of a first conductivity type; a second semiconductor region of a second conductivity type extending from one surface of said first semiconductor region into the inside of said first semiconductor region so as to form small areas and an annular area surrounding said small areas, and having an impurity concentration higher than that of said first semiconductor region; a third semiconductor region of the second conductivity type extending from said one surface of said first semiconductor region into the inside of said first semiconductor region so as to be located on portions of said first semiconductor region which are exposed among said small and annular areas of said second semiconductor region, said third semiconductor region having a thickness thinner than that of said second semiconductor region and having an impurity concentration lower than that of said second semiconductor region; a fourth semiconductor region of the first conductivity type provided so as to be adjacent to said first semiconductor region at an opposite side to said one surface, said fourth semiconductor region partly extending to said one surface so as to be exposed at said one surface and having an impurity concentration higher than that of said first semiconductor region; a first electrode provided so as to be in ohmic contact with said second semiconductor region and so as to be in contact through a Schottky barrier with said third semiconductor region; and a second electrode provided so as to be in ohmic contact with the portion of said fourth semiconductor region which is exposed at said one surface.
Claim 6
Dependent Claim
290 words
A semiconductor module having a parallel connection of an insulated gate bipolar transistor and a diode between a pair of terminals thereof, characterized in that the diode comprises: a first semiconductor region of a first conductivity type; a second semiconductor region of a second conductivity type extending from one surface of said first semiconductor region into the inside of said first semiconductor region so as to form small areas and an annular area surrounding said small areas, and having an impurity concentration higher than that of said first semiconductor region; a third semiconductor region of the second conductivity type extending from said one surface of said first semiconductor region into the inside of said first semiconductor region so as to be located on portions of said first semiconductor region which are exposed among said small and annular areas of said second semiconductor region, said third semiconductor region having a thickness thinner than that of said second semiconductor region and having an impurity concentration lower than that of said second semiconductor region; a fourth semiconductor region of the first conductivity type provided so as to be adjacent to said first semiconductor region at an opposite side to said one surface, said fourth semiconductor region partly extending to said one surface so as to be exposed at said one surface and having an impurity concentration higher than that of said first semiconductor region; a first electrode provided so as to be in ohmic contact with said second semiconductor region and so as to be in contact through a Schottky barrier with said third semiconductor region; and a second electrode provided so as to be in ohmic contact with the portion of said fourth semiconductor region which is exposed at said one surface.
Claim 7
Dependent Claim
63 words
A semiconductor according to claim 3, in which, when a forward current with a current density J F is passed between said first and second electrodes, the relation ##EQU4## is established in a forward voltage V F range of 0.1 (V) to 0.3 (V), where k represents the Boltzmann constant, l represents the quantity of electron charges, and T represents the absolute temperature.
References Cited (Backward Citations)
JPS5860577A
Cited
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