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US5166646A
Expired / Lapsed
US
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Integrated tunable resonators for use in oscillators and filters
Assignee: Motorola Solutions Inc
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Filing: 1992-02-07
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Granted: 1992-11-24
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Expires: 2012-02-07
Abstract
Abstract An integrated tunable resonator (100) includes a common semiconductor carrier (110). Formed on the common semiconductor carrier (110) is an integrated voltage variable capacitor (104). A bulk acoustic wave resonator is formed on the common semiconductor carrier (110) and coupled to the voltage variable capacitor (104). In one aspect of the present invention, a thin film resonator (106) is coupled to the voltage variable capacitor (104) both of which are formed on a common semiconductor substrate (110). The combination of these three elements provide for a tunable integrated resonator (100). In another aspect of the present invention, a surface acoustic wave resonator (522), formed on a common semiconductor carrier (514), is coupled to a voltage variable capacitor (520) in order to provide a tunable resonator (500).
Inventors
- 👤 Branko Avanic
- 👤 Robert L. Benenati
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 15:21
CPC Classifications
H; H03; H03H; H03H9/00; H03H9/15; H03H9/17; H03H9/171; H03H9/172; H03H9/173; H03B; H03B5/00; H03B5/30; H03B5/32; H03B5/326; H03H5/00; H03H5/12; H03H9/176; H03H9/25; H03H9/02; H03H2009/02165; H03H2009/02173; H03H2009/02188; H03H2009/02204
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
35 words
An integrated tunable resonator, comprising: a semiconductor carrier; a Bulk Acoustic Wave (BAW) resonator formed on the semiconductor carrier; and a Voltage Variable Capacitor (VVC) formed on the semiconductor carrier and coupled to the BAW.
Claim 2
Dependent Claim
35 words
An integrated tunable resonator, comprising: a semiconductor carrier; a Bulk Acoustic Wave (BAW) resonator formed on the semiconductor carrier; and a Voltage Variable Capacitor (VVC) formed on the semiconductor carrier and coupled to the BAW.
Claim 3
Dependent Claim
79 words
The integrated tunable resonator of claim 1, wherein the VVC includes: a semiconductor having a first and a second layer, the second layer formed of semiconductive material of a higher resistivity than the first layer; a depletion layer formed in the second layer; an insulating layer formed on the second layer, said insulating layer being a metal oxide having a dielectric constant greater than the dielectric constant of the semiconductor; and a conductive electrode formed on the insulating layer.
Claim 4
Dependent Claim
16 words
The integrated tunable resonator of claim 1, wherein the VVC comprises a Zirconium Titanate integrated capacitor.
Claim 5
Dependent Claim
16 words
The integrated tunable resonator of claim 1, wherein the BAW comprises a Thin Film Resonator (TFR).
Claim 6
Dependent Claim
18 words
The integrated tunable resonator of claim 2, wherein the insulating layer has a dielectric constant greater than 16.
Claim 7
Dependent Claim
16 words
The integrated tunable resonator of claim 2, wherein the insulating layer is a low-loss, non-ferroelectric insulator.
Claim 8
Dependent Claim
28 words
The integrated tunable resonator of claim 2, wherein the dielectric constant of the insulating layer is greater than the dielectric constant of the second layer of semiconductive material.
Claim 9
Dependent Claim
45 words
The integrated tunable resonator of claim 2, wherein the insulating layer material is a metal oxide wherein the metal comprises at least first and second components selected from the group consisting of barium, lead, lithium, molybdenum, neodymium, niobium, strontium, tantalum, titanium, tungsten, vanadium, and zirconium.
Claim 10
Dependent Claim
36 words
An integrated tunable resonator, comprising: a semiconductor carrier; an integrated Voltage Variable Capacitor (VVC) formed on the semiconductor carrier; a Surface Acoustic Wave (SAW) resonator formed on the semiconductor substrate and coupled to the integrated VVC.
Claim 11
Dependent Claim
36 words
An integrated tunable resonator, comprising: a semiconductor carrier; an integrated Voltage Variable Capacitor (VVC) formed on the semiconductor carrier; a Surface Acoustic Wave (SAW) resonator formed on the semiconductor substrate and coupled to the integrated VVC.
Claim 12
Dependent Claim
80 words
The integrated tunable resonator of claim 9, wherein the integrated VVC includes: a semiconductor having a first and a second layer, the second layer formed of semiconductive material of a higher resistivity than the first layer; a depletion layer formed in the second layer; an insulating layer formed on the second layer, said insulating layer being a metal oxide having a dielectric constant greater than the dielectric constant of the semiconductor; and a conductive electrode formed on the insulating layer.
Claim 13
Dependent Claim
47 words
An integrated oscillator, comprising: an active network; an integrated tunable resonator coupled to the active network, comprising: a semiconductor carrier; a Bulk Acoustic Wave (BAW) resonator formed on the semiconductor carrier; and a Voltage Variable Capacitor (VVC) formed on the semiconductor carrier and coupled to the BAW.
Claim 14
Dependent Claim
47 words
An integrated oscillator, comprising: an active network; an integrated tunable resonator coupled to the active network, comprising: a semiconductor carrier; a Bulk Acoustic Wave (BAW) resonator formed on the semiconductor carrier; and a Voltage Variable Capacitor (VVC) formed on the semiconductor carrier and coupled to the BAW.
Claim 15
Dependent Claim
15 words
The integrated oscillator of claim 11, wherein the BAW comprises a Thin Film Resonator (TFR).
Claim 16
Dependent Claim
80 words
The integrated oscillator of claim 11, wherein the VVC includes: a semiconductor having a first and a second layer, the second layer formed of semiconductive material of a higher resistivity than the first layer; a depletion layer formed in the high resistivity layer; an insulating layer formed on the high resistivity layer, said insulating layer being a metal oxide having a dielectric constant greater than the dielectric constant of the semiconductor; and a conductive electrode formed on the insulating layer.
Claim 17
Dependent Claim
39 words
An integrated filter, comprising: an integrated tunable resonator, comprising: a semiconductor carrier; a Bulk Acoustic Wave (BAW) resonator formed on the semiconductor carrier; and a Voltage Variable Capacitor (VVC) formed on the semiconductor carrier and coupled to the BAW.
Claim 18
Dependent Claim
39 words
An integrated filter, comprising: an integrated tunable resonator, comprising: a semiconductor carrier; a Bulk Acoustic Wave (BAW) resonator formed on the semiconductor carrier; and a Voltage Variable Capacitor (VVC) formed on the semiconductor carrier and coupled to the BAW.
Claim 19
Dependent Claim
15 words
The integrated filter of claim 14, wherein the BAW comprises a Thin Film Resonator (TFR).
Claim 20
Dependent Claim
79 words
The integrated filter of claim 14, wherein the integrated capacitor includes: a semiconductor having a first and a second layer, the second layer formed of semiconductive material of a higher resistivity than the first layer; a depletion layer formed in the second layer; an insulating layer formed on the second layer, said insulating layer being a metal oxide having a dielectric constant greater than the dielectric constant of the semiconductor; and a conductive electrode formed on the insulating layer.
Claim 21
Dependent Claim
69 words
A wide bandwidth tunable resonator, comprising: a plurality of integrated tunable resonators, the tunable resonator including: a semiconductor carrier; a Bulk Acoustic Wave (BAW) resonator formed on the semiconductor carrier; and a Voltage Variable Capacitor (VVC) formed on the semiconductor carrier and coupled to the BAW to provide tunability to the integrated tunable resonator; and at least one integrated switch to switch among the plurality of integrated tunable resonators.
Claim 22
Dependent Claim
69 words
A wide bandwidth tunable resonator, comprising: a plurality of integrated tunable resonators, the tunable resonator including: a semiconductor carrier; a Bulk Acoustic Wave (BAW) resonator formed on the semiconductor carrier; and a Voltage Variable Capacitor (VVC) formed on the semiconductor carrier and coupled to the BAW to provide tunability to the integrated tunable resonator; and at least one integrated switch to switch among the plurality of integrated tunable resonators.
Claim 23
Dependent Claim
18 words
The wide bandwidth tunable resonator of claim 17, wherein the at least one integrated switch includes a VVC.
Claim 24
Dependent Claim
22 words
The wide bandwidth tunable resonator of claim 17, wherein the at least one integrated switch includes a Field Effect Transistor (FET) switch.
Claim 25
Dependent Claim
20 words
The wide bandwidth tunable resonator of claim 17, wherein the at least one integrated switch includes a PIN diode switch.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-11-24 | 1996-05-25 | 1996-11-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-11-24 | 2000-05-25 | 2000-11-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-11-24 | 2004-05-25 | 2004-11-24 | $7700.00 | Window Closed / Lapsed |