Two dimensional distributed amplifier having multiple phase shifted outputs

Claim 2

A two dimensional distributed amplifier phase shifter comprising: a semiconductor substrate; at least one microstrip transmission line disposed on a surface of said semiconductor substrate, said at least one microstrip transmission line phase shifting a received RF signal through a predetermined phase angle; a reference amplifier circuit disposed on said surface of said semiconductor substrate orthogonal to said at least one microstrip transmission line, said reference amplifier having an input connected to one end of said at least one microstrip transmission line and generating a reference signal in response to a received RF signal; at least one phase shifted amplifier circuit disposed on said surface of said semi-conductor substrate orthogonal to said at least one microstrip transmission line, said phase shifted amplifier circuit having an input connected to an opposite end of said microstrip transmission line and generating a phase shifted signal in response to a received RF signal phase shifted by said at least one microstrip transmission line, said phase shifted signal being phase shifted by 180° with respect to said reference signal.

Claim 3

The phase shifter of claim 1 wherein said reference amplifier circuit comprises: an input amplifier having its input connected to said one end of said microstrip transmission line and an output; and at least one output amplifier having an input connected to said output of said input amplifier, and an output, said output amplifier generating said reference signal at said output.

Claim 4

The phase shifter of claim 2 wherein said input amplifier circuit comprises at least two input amplifiers connected in parallel with each other and means for phase shifting the output of each of said at least two output amplifiers so that the output signals generated by said at least two output amplifiers are in phase with each other and additively combine.

Claim 5

The phase shifter of claim 3 wherein said means for phase shifting comprises: a first microstrip transmission line connecting an input of said first input amplifier with an input of said second input amplifier; and a second microstrip transmission line connecting an output of said first input amplifier with an output of said second input amplifier, said first and second microstrip transmission lines producing substantially identical phase shifts of said RF signal.

Claim 6

The phase shifter of claim 4 wherein said at least one phase shifted amplifier circuit comprises at least two output amplifiers connected in parallel with each other and means for phase shifting the output of each of said at least two output amplifiers so that all of said at least two output amplifiers are in phase with each other and their outputs additively combine.

Claim 7

The phase shifter of claim 2 wherein said input and output amplifiers are field effect transistors.

Claim 8

The phase shifter of claim 2 wherein at least one of said input and output amplifiers is responsive to a control signal received from an external source to switch between a conductive and nonconductive state.

Claim 9

The phase shifter of claim 7 wherein said at least one microstrip transmission line comprises a plurality of serially connected microstrip transmission lines disposed along a line, and wherein said at least one phase shifted amplifier circuit comprises a plurality of phase shifted amplifier circuits disposed othogonal to said line, each phase shifted amplifier circuit having an input connected to an end of a respective one of said plurality of microstrip transmission lines.

Claim 10

The phase shifter of claim 8 wherein each of said phase shifted amplifier circuits comprises: an input amplifier having an input connected to said end of said respective one microstrip transmission line and an output, and; at least one output amplifier having an input connected to said output of said input amplifier and an output, said at least one output amplifier generating said phase shifted signal at said output.

Claim 11

The phase shifter of claim 9 wherein said input and output amplifiers are field effect transistors formed on said substrate.

Claim 12

The phase shifter of claim 10 wherein each of said input amplifier field effect transistor has a gate, said gate being connected in series between said end of said microstrip transmission line and an adjacent microstrip transmission line of said serially connected microstrip transmission lines.

Claim 13

The phase shifter of claim 11 wherein said RF signal has a wavelength in the millimeter wave length range, the inductance of said gates of said input amplifier field effect transistors is combined with the inductance of said microstrip transmission lines to produce said predetermined phase shift.

Claim 14

The phase shifter of claim 9 wherein at least one of said input and output amplifiers comprises: a first field effect transistor having a gate serving as said input, a source, and a drain; and a second field effect transistor having a source connected to said drain of said first field effect transistor, a drain serving as said output, and gate responsive to an external signal to switch said second field effect transistor between a conductive and a nonconductive state.

Claim 15

The phase shifter of claim 13 further including a combiner means for combining said reference signal and phase shifted signals generated by said plurality of phase shifted amplifier circuits in at a unitary output.

Claim 16

The phase shifter of claim 8 wherein said phase shifter has a unitary output, said phase shifter further including solid state switch means for selectively conducting a selected one of said reference signal and said plurality of phase shifted signals to said unitary output.

Claim 17

The phase shifter of claim 2 wherein at least one of said input and output amplifiers comprises: a first field effect transistor having a gate serving as said input to said amplifier, a source and a drain; and a second field effect transistor having a source connected to said drain of said first field effect transistor, a drain serving as said output and a gate responsive to an external signal to switch said second field effect transistor between a conductive and nonconductive state.

Claim 18

The phase shifter of claim 1 wherein said semiconductor substrate is gallium arsenide substrate and said field effect transistors are gallium arsenide field effect transistors.

Claim 19

A two dimensional distributed amplifier for generating phase shifted signals comprising: at least two serially connected microstrip transmission lines, each of said serially connected microstrip transmission lines phase shifting an RF signal received at one end of said at least two microstrip transmission lines, reference amplifier means having an input connected to said one end of said at least two serially connected microstrip transmission lines, said reference amplifier circuit generating a reference signal; first phase amplifier means having an input connected to the junction between said at least two microstrip transmission lines, said first phase amplifier means generating a first phase signal phase shifted from said reference signal by a first predetermined phase angle; and second phase amplifier means having an input connected to an opposite end of said at least two serially connected microstrip transmission lines, said second phase amplifier means generating a second phase signal phase shifted from said reference signal by a second predetermined phase angle said second predetermined phase angle being a multiple of the phase angle of said first predetermined phase angle.

Claim 20

A two dimensional distributed amplifier for generating phase shifted signals comprising: at least two serially connected microstrip transmission lines, each of said serially connected microstrip transmission lines phase shifting an RF signal received at one end of said at least two microstrip transmission lines, reference amplifier means having an input connected to said one end of said at least two serially connected microstrip transmission lines, said reference amplifier circuit generating a reference signal; first phase amplifier means having an input connected to the junction between said at least two microstrip transmission lines, said first phase amplifier means generating a first phase signal phase shifted from said reference signal by a first predetermined phase angle; and second phase amplifier means having an input connected to an opposite end of said at least two serially connected microstrip transmission lines, said second phase amplifier means generating a second phase signal phase shifted from said reference signal by a second predetermined phase angle said second predetermined phase angle being a multiple of the phase angle of said first predetermined phase angle.

Claim 21

The two dimensional distributed amplifier of claim 18 wherein said at least two serially connected microstrip transmission lines are a plurality of microstrip transmission lines and said second phase amplifier means comprises a plurality of phase amplifier circuits, each phase amplifier circuit of said plurality of phase amplifier circuits being connected to an end of a respective one of said plurality of microstrip transmission lines, each of said phase amplifier circuits generating an output signal phase shifted with respect to said reference signal by a phase angle which is a multiple of said first predetermined phase angle.

Claim 22

A two dimensional distributed amplifier phase shifter comprising: a semiconductor substrate; at least two serially connected microstrip transmission lines disposed on a surface of said semiconductor substrate, each of said at least two microstrip transmission lines phase shifting a received RF signal through an equal predetermined phase angle; a reference amplifier circuit disposed on the surface of said semiconductor substrate having an input connected to one end of said at least two serially connected microstrip transmission lines, said reference amplifier generating a reference signal in response to a received RF signal; a first phase shifted amplifier disposed on t he surface of said semiconductor substrate having an input connected to a first junction of said at least two serially connected microstrip transmission lines, said first phase shifted amplifier generating a first output signal phase shifted from said reference signal by a phase angle equal to said predetermined phase angle; and second phase shifted amplifier means disposed on said semiconductor substrate and connected to the end of said at least two serially connected microstrip transmission lines opposite said one end, said second phase shifted amplifier means generating at least a second output signal phase shifted from said reference signal by a phase angle equal to the sum of said equal predetermined phase angles produced by said at least two serially connected microstrip transmission lines.

Claim 23

A two dimensional distributed amplifier phase shifter comprising: a semiconductor substrate; at least two serially connected microstrip transmission lines disposed on a surface of said semiconductor substrate, each of said at least two microstrip transmission lines phase shifting a received RF signal through an equal predetermined phase angle; a reference amplifier circuit disposed on the surface of said semiconductor substrate having an input connected to one end of said at least two serially connected microstrip transmission lines, said reference amplifier generating a reference signal in response to a received RF signal; a first phase shifted amplifier disposed on t he surface of said semiconductor substrate having an input connected to a first junction of said at least two serially connected microstrip transmission lines, said first phase shifted amplifier generating a first output signal phase shifted from said reference signal by a phase angle equal to said predetermined phase angle; and second phase shifted amplifier means disposed on said semiconductor substrate and connected to the end of said at least two serially connected microstrip transmission lines opposite said one end, said second phase shifted amplifier means generating at least a second output signal phase shifted from said reference signal by a phase angle equal to the sum of said equal predetermined phase angles produced by said at least two serially connected microstrip transmission lines.

Claim 24

The phase shifter of claim 20 wherein said at least two microstrip transmission lines comprise a plurality of microstrip transmission lines and wherein said second phase shifted amplifier means comprises a plurality of phase shifted amplifier circuits, each phase shifted amplifier circuit of said plurality of phase shifted amplifier circuits being connected to an end of a respective one of said plurality of microstrip transmission lines, each of said phase shifted amplifier circuits generating an output signal phase shifted with respect to said reference signal in an ascending multiple of said predetermined phase angle, said ascending multiple being a number equal to the number of microstrip transmission lines between said phased shifted amplifier circuit and said first phase shifted amplifier.