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US5165283A
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US
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High temperature transducers and methods of fabricating the same employing silicon carbide
Assignee: Kulite Semiconductor Products Inc
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Filing: 1991-05-02
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Granted: 1992-11-24
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Expires: 2011-05-02
Abstract
Abstract There is disclosed an apparatus and structure for a pressure transducer employing silicon carbide and utilizing p-type SiC as a diaphragm with n-type mesa SiC force sensing resistors integrally formed on the surface of the diaphragm. The p-type SiC diaphragm is positioned on top of an annular ring of silicon which is formed from a silicon wafer utilized as the supporting wafer for the process. The structure depicted is a given conductivity SiC diaphragm having opposite conductivity SiC resistors positioned thereon and fabricated by processing techniques utilizing selective etching properties of SiC.
Inventors
- 👤 Anthony D. Kurtz
- 👤 David Goldstein
- 👤 Joseph S. Shor
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 10:56
CPC Classifications
G; G01; G01L; G01L9/00; G01L9/0041; G01L9/0042; G01L9/0051; G01L9/0052; G01L9/0055; Y; Y10; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49082; Y10T29/49103
Claims Analysis
Total Claims: 27
Claim 1
Independent Claim
38 words
A high temperature pressure transducer, comprising: a diaphragm of a predetermined thickness fabricated from a first type of silicon carbide and at least one piezoresistive sensor of a second type of silicon carbide integrally formed on said diaphragm.
Claim 2
Dependent Claim
38 words
A high temperature pressure transducer, comprising: a diaphragm of a predetermined thickness fabricated from a first type of silicon carbide and at least one piezoresistive sensor of a second type of silicon carbide integrally formed on said diaphragm.
Claim 3
Dependent Claim
22 words
The pressure transducer according to claim 1, wherein said first type of silicon carbide is p-type with said second type being n-type.
Claim 4
Dependent Claim
17 words
The pressure transducer according to claim 1, wherein the thickness of said diaphragm is between 3-20 um.
Claim 5
Dependent Claim
14 words
The pressure transducer according to claim 1, wherein said silicon carbide is β-silicon carbide.
Claim 6
Dependent Claim
50 words
The pressure transducer according to claim 1, further including an annular member secured to the surface of said diaphragm opposite said sensor and having a central aperture positioned about said sensor to enable said diaphragm to deflect within said aperture when a force is exerted on said sensor containing surface.
Claim 7
Dependent Claim
15 words
The pressure transducer according to claim 5, wherein said annular member is fabricated from silicon.
Claim 8
Dependent Claim
18 words
The transducer according to claim 1, wherein said silicon carbide forming said sensor is unintentionally doped silicon carbide.
Claim 9
Dependent Claim
18 words
The transducer according to claim 1, wherein said silicon carbide forming said sensor is nitrogen doped silicon carbide.
Claim 10
Dependent Claim
32 words
The transducer according to claim 1, wherein said at least one sensor is included in a four sensor Wheatstone bridge configuration with each sensor fabricated from said second type of silicon carbide.
Claim 11
Dependent Claim
23 words
The transducer according to claim 1, further including a metal contact formed on said diaphragm coupled to said sensor to enable contact therewith.
Claim 12
Independent Claim
107 words
A method of fabricating a high temperature pressure transducer comprising the steps of: growing a first layer of a first type of silicon carbide on the surface of a silicon wafer, said layer having a given thickness; growing a thinner layer of a second type of silicon carbide on the surface of said first layer; selectively etching said thinner layer of said second type of silicon carbide to form at least one piezoresistive sensor from said thinner layer; and forming an aperture in said silicon wafer, said aperture having an area underlying said sensor to allow said first type silicon carbide layer to act as a diaphragm.
Claim 13
Independent Claim
107 words
A method of fabricating a high temperature pressure transducer comprising the steps of: growing a first layer of a first type of silicon carbide on the surface of a silicon wafer, said layer having a given thickness; growing a thinner layer of a second type of silicon carbide on the surface of said first layer; selectively etching said thinner layer of said second type of silicon carbide to form at least one piezoresistive sensor from said thinner layer; and forming an aperture in said silicon wafer, said aperture having an area underlying said sensor to allow said first type silicon carbide layer to act as a diaphragm.
Claim 14
Dependent Claim
19 words
The method according to claim 11, wherein said step of growing employs chemical vapor deposition of said silicon carbide.
Claim 15
Dependent Claim
14 words
The method according to claim 11, wherein said silicon carbide is beta silicon carbide.
Claim 16
Dependent Claim
15 words
The method according to claim 11, wherein said first type of silicon carbide is p-type.
Claim 17
Dependent Claim
15 words
The method according to claim 11, wherein said second type of silicon carbide is n-type.
Claim 18
Dependent Claim
19 words
The method according to claim 11, wherein said layer of first type silicon carbide is between 3-20 um thick.
Claim 19
Dependent Claim
16 words
The method according to claim 16, wherein said thinner layer is less than 1.5 um thick.
Claim 20
Dependent Claim
19 words
The method according to claim 11, wherein the step of selectively etching includes reactive ion etching said thinner layer.
Claim 21
Dependent Claim
17 words
The method according to claim 11, wherein the step of selectively etching includes photoelectrochemical etching said sensor.
Claim 22
Dependent Claim
27 words
The method according to claim 11, further including the step of forming contacts on said layer of said first type of silicon carbide after forming said sensor.
Claim 23
Dependent Claim
25 words
The method according to claim 20, wherein the step of forming said contacts includes sputtering a metal contact pattern on said layer of silicon carbide.
Claim 24
Dependent Claim
35 words
A high temperature pressure sensor, comprising: a piezoresistive sensor fabricated from a first type of silicon carbide, and a force deflecting member fabricated from a second type of silicon carbide having said sensor mounted thereon.
Claim 25
Dependent Claim
35 words
A high temperature pressure sensor, comprising: a piezoresistive sensor fabricated from a first type of silicon carbide, and a force deflecting member fabricated from a second type of silicon carbide having said sensor mounted thereon.
Claim 26
Dependent Claim
14 words
The sensor according to claim 22, wherein said force deflecting member is a diaphragm.
Claim 27
Dependent Claim
14 words
The sensor according to claim 22, wherein said force deflecting member is a beam.
References Cited (Backward Citations)
US4320664A
Cited
US4994781A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-11-24 | 1996-05-25 | 1996-11-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-11-24 | 2000-05-25 | 2000-11-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-11-24 | 2004-05-25 | 2004-11-24 | $7700.00 | Window Closed / Lapsed |