US5162966A
Expired / Lapsed
US
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Semiconductor device having a surge protecting element
Assignee: Fuji Electric Co Ltd
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Filing: 1991-06-24
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Granted: 1992-11-10
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Expires: 2011-06-24
Abstract
Abstract A MOSFET semiconductor device has a surge protecting element comprising a transistor element having a gate electrode, a source electrode, and a drain electrode. A Zener diode having a cathode electrode and an anode electrode is connected to the drain electrode of the transistor element. A lateral MOSFET element has a gate electrode and a drain electrode connected to the anode electrode of the Zener diode, a source electrode connected to the gate electrode of the transistor element, and a back gate electrode connected to the source electrode of the transistor element.
Inventors
- 👤 Tatsuhiko Fujihira
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 14:23
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/101; H10D84/141; H10D84/148; H03; H03K; H03K17/00; H03K17/08; H03K17/082; H03K17/0822; H10D89/00; H10D89/60; H10D89/601; H10D89/611; H03K2217/00; H03K2217/0018
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
98 words
A MOSFET semiconductor device having means for voltage surge protection, said device comprising: a transistor element having a gate electrode, a source electrode, and a drain electrode; Zener diode means having an anode electrode and a cathode electrode, the cathode electrode being connected to said drain electrode of the transistor element; a lateral MOSFET element having a gate electrode and a drain electrode connected to said anode electrode of the Zener diode, a source electrode connected to the gate electrode of the transistor element, and a back gate electrode connected to the source electrode of said transistor element.
Claim 2
Dependent Claim
98 words
A MOSFET semiconductor device having means for voltage surge protection, said device comprising: a transistor element having a gate electrode, a source electrode, and a drain electrode; Zener diode means having an anode electrode and a cathode electrode, the cathode electrode being connected to said drain electrode of the transistor element; a lateral MOSFET element having a gate electrode and a drain electrode connected to said anode electrode of the Zener diode, a source electrode connected to the gate electrode of the transistor element, and a back gate electrode connected to the source electrode of said transistor element.
Claim 3
Dependent Claim
100 words
The MOSFET semiconductor device of claim 1, wherein said device includes a semiconductor substrate of a first conductivity type, and wherein said lateral MOSFET element includes: a first region of a second conductivity type in the surface of said semiconductor substrate; second and third regions of the first conductivity type in the surface of the first region and laterally spaced from one another; a gate insulating layer overlying the first region between the second and third region and at least partially the second and third regions; and said gate electrode of the lateral MOSFET element overlying said gate insulating layer.
Claim 4
Dependent Claim
16 words
The MOSFET semiconductor device of claim 1, wherein said transistor element includes a vertical MOSFET element.
Claim 5
Dependent Claim
15 words
The MOSFET semiconductor device of claim 1, wherein said transistor element includes a bipolar transistor.
Claim 6
Dependent Claim
17 words
The MOSFET semiconductor device of claim 1, wherein said transistor element includes an insulated gate bipolar transistor.
Claim 7
Dependent Claim
21 words
The MOSFET semiconductor device of claim 1, wherein said Zener diode means includes a plurality of Zener diodes connected in series.
Claim 8
Dependent Claim
28 words
The MOSFET semiconductor device of claim 1, further comprising: a control electrode; and a resistor coupled between said control electrode and the gate electrode of said transistor element.
Claim 9
Dependent Claim
35 words
The MOSFET semiconductor device of claim 2, wherein said second region is coupled to the source electrode of the lateral MOSFET and said third region is coupled to the drain electrode of the lateral MOSFET.
Claim 10
Dependent Claim
23 words
The MOSFET semiconductor device of claim 2, wherein said first region is coupled to said back gate electrode of the lateral MOSFET element.
Claim 11
Dependent Claim
44 words
The MOSFET semiconductor device of claim 2, wherein said lateral MOSFET further includes one or more fourth regions of the second conductivity type in the surface of the semiconductor substrate and laterally within the first region, and said fourth region contacts the first region.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-11-10 | 1996-05-11 | 1996-11-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-11-10 | 2000-05-11 | 2000-11-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-11-10 | 2004-05-11 | 2004-11-10 | $7700.00 | Window Closed / Lapsed |