Patent US5589855A successfully refreshed from Google Patents.
Patent US5162887A successfully refreshed from Google Patents.
US5162887A
Expired / Lapsed
US
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Buried junction photodiode
Assignee: Texas Instruments Inc
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Filing: 1991-05-07
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Granted: 1992-11-10
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Expires: 2011-05-07
Abstract
Abstract A buried P-N junction photodiode is obtained in LinBiCMOS process with junctions formed between N+DUF diffused region and both first P-EPI layer and second P-EPI layer. Contact to N+DUF diffused region is made by a small area deep N+collector diffusion or N well diffusion. This novel buried-junction photodiode can be used for several types of unique photodetector structures including: single photodiode with low surface leakage current, multi-junction photodiodes for incident light spectral distribution information and higher efficiency visible response photodetectors. The disclosed structures are compatible with bipolar and CMOS processes for providing on-chip integration of optical photodetectors with Linear ASIC standard cells and other circuit functions.
Inventors
- 👤 Eugene G. Dierschke
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-10 01:26
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/18; H10F39/182; H10F39/1825; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/221
Claims Analysis
Total Claims: 36
Claim 1
Independent Claim
108 words
A photodiode electrically responsive to incident light comprising: a first region of semiconductor material of a first conductivity type; a second region of semiconductor material of a second conductivity type opposite said first conductivity type extending over a portion of said first region; a third region of semiconductor material of said first conductivity type extending over and contacting at least portions of said first and second regions, said third region for receiving light, and a fourth region of the second type conductivity extending from the second region through said third region and connected to a first electrical contact, and a second electrical contact connected to said third region.
Claim 2
Dependent Claim
108 words
A photodiode electrically responsive to incident light comprising: a first region of semiconductor material of a first conductivity type; a second region of semiconductor material of a second conductivity type opposite said first conductivity type extending over a portion of said first region; a third region of semiconductor material of said first conductivity type extending over and contacting at least portions of said first and second regions, said third region for receiving light, and a fourth region of the second type conductivity extending from the second region through said third region and connected to a first electrical contact, and a second electrical contact connected to said third region.
Claim 3
Dependent Claim
36 words
The photodiode of claim 1 wherein the first, second, and third regions comprise a photoconductive material selected from the group consisting of Si, Ge, ZnS, CdS, CdSe, GaAs, PbS, PbTe, InSb, InP, GaAlAs, AlAs, and PbSe.
Claim 4
Dependent Claim
29 words
The photodiode of claim 1 wherein the first region comprises a first epitaxial layer of monocrystalline material and the third region comprises a second epitaxial layer of monocrystalline material.
Claim 5
Dependent Claim
13 words
The photodiode of claim 1 wherein the second region comprises interconnected multiple stripes.
Claim 6
Dependent Claim
24 words
The photodiode of claim 1 wherein the fourth region has an outer periphery which is smaller than an outer periphery of the second region.
Claim 7
Dependent Claim
33 words
The photodiode of claim 1 further comprising a substrate of the first conductivity type, said first region extending over said substrate, said substrate having a conductivity greater than said first and third regions.
Claim 8
Dependent Claim
22 words
The photodiode of claim 1 in which the first conductivity type is p type and the second conductivity type is n type.
Claim 9
Dependent Claim
22 words
The photodiode of claim 1 in which said first and third regions are lightly doped and said second region is heavily doped.
Claim 10
Dependent Claim
32 words
The photodiode of claim 1 further comprising a surface region of semiconductor material of said second conductivity type extending over a portion of said third region, said surface region for receiving light.
Claim 11
Dependent Claim
16 words
The photodiode of claim 9 further comprising a third electrical contact connected to said surface region.
Claim 12
Dependent Claim
38 words
The photodiode of claim 1 in which said third region has a surface for receiving light, a portion of said light receiving surface having a conductivity of the first type greater than the remainder of said third region.
Claim 13
Dependent Claim
98 words
A photodiode electrically responsive to incident light comprising: a first region of semiconductor material of a first conductivity type; a second region of semiconductor material of a second conductivity type opposite said first conductivity type extending over a portion of said first region; a third region of semiconductor material of said first conductivity type extending over and contacting at least portions of said first and second regions, said third region having a surface for receiving light; a portion of said light receiving surface having a conductivity of the first type greater than the remainder of said third region.
Claim 14
Dependent Claim
98 words
A photodiode electrically responsive to incident light comprising: a first region of semiconductor material of a first conductivity type; a second region of semiconductor material of a second conductivity type opposite said first conductivity type extending over a portion of said first region; a third region of semiconductor material of said first conductivity type extending over and contacting at least portions of said first and second regions, said third region having a surface for receiving light; a portion of said light receiving surface having a conductivity of the first type greater than the remainder of said third region.
Claim 15
Dependent Claim
152 words
A photodiode solar cell electrically responsive to incident light comprising: a first region of semiconductor material of a first conductivity type, said first region having a back surface of semiconductor material of said first conductivity type; a second region of semiconductor material of a second conductivity type opposite said first conductivity type extending over a portion of said first region; and a third region of semiconductor material of said first conductivity type extending over and contacting at least portions of said first and second regions, said third region having a front surface of semiconductor material of said first conductivity type for receiving light, a portion of said front surface having a conductivity greater than the conductivity of semiconductor material of the first type disposed between said portion of the front surface and said back surface, said back surface having a conductivity greater than the conductivity of said portion of the front surface.
Claim 16
Dependent Claim
152 words
A photodiode solar cell electrically responsive to incident light comprising: a first region of semiconductor material of a first conductivity type, said first region having a back surface of semiconductor material of said first conductivity type; a second region of semiconductor material of a second conductivity type opposite said first conductivity type extending over a portion of said first region; and a third region of semiconductor material of said first conductivity type extending over and contacting at least portions of said first and second regions, said third region having a front surface of semiconductor material of said first conductivity type for receiving light, a portion of said front surface having a conductivity greater than the conductivity of semiconductor material of the first type disposed between said portion of the front surface and said back surface, said back surface having a conductivity greater than the conductivity of said portion of the front surface.
Claim 17
Dependent Claim
26 words
The photodiode solar cell of claim 13 wherein the fourth region has an outer periphery which is smaller than an outer periphery of the second region.
Claim 18
Dependent Claim
35 words
The photodiode solar cell of claim 13 wherein the first, second, and third regions comprise a photoconductive material selected from the group consisting of Si, Ge, ZnS, CdS, CdSe, GaAs, PbS, PbTe, InSb, and PbSe.
Claim 19
Dependent Claim
15 words
The photodiode solar cell of claim 13 wherein the second region comprises interconnected multiple stripes.
Claim 20
Dependent Claim
40 words
The photodiode solar cell of claim 13 further comprising a fourth region of the second conductivity type extending from the second region through said third region and connected to a first electrical contact adjacent said front surface for receiving light.
Claim 21
Dependent Claim
24 words
The photodiode solar cell of claim 13 in which the first conductivity type is p type and the second conductivity type is n type.
Claim 22
Dependent Claim
29 words
The photodiode solar cell of claim 13 in which the first region comprises a substrate of monocrystalline material and said third region comprises an epitaxial layer of monocrystalline material.
Claim 23
Dependent Claim
18 words
The photodiode solar cell of claim 13 further comprising a second electrical contact connected to said back surface.
Claim 24
Dependent Claim
22 words
The photodiode of claim 13 in which said first and third regions are lightly doped and said second region is heavily doped.
Claim 25
Dependent Claim
230 words
A tri-photodiode electrically responsive to incident light comprising: a first region of semiconductor material of a first conductivity type; a second region of semiconductor material of a second conductivity type opposite said first conductivity type extending over a portion of said first region; a third region of semiconductor material of said first conductivity type extending over at least portions of said first and second regions; a surface region of semiconductor material of said second conductivity type extending over a portion of said third region, said surface region for receiving light; a ring of semiconductor material of said second conductivity type extending from the second region to a surface of said third region, said ring surrounding but not contacting said surface region to isolate a first portion of said third region located within said ring from a second portion of the third region located outside of said ring; a first electrical contact connected to said second portion of the third region; a second electrical contact connected to said ring; a third electrical contact connected to said first portion of the third region; a fourth electrical contact connected to said surface region; and a substrate of the first conductivity type, said first region comprising a first epitaxial layer extending over said substrate, said third region comprising a second epitaxial layer, said substrate having greater conductivity than said first and second epitaxial layers.
Claim 26
Dependent Claim
230 words
A tri-photodiode electrically responsive to incident light comprising: a first region of semiconductor material of a first conductivity type; a second region of semiconductor material of a second conductivity type opposite said first conductivity type extending over a portion of said first region; a third region of semiconductor material of said first conductivity type extending over at least portions of said first and second regions; a surface region of semiconductor material of said second conductivity type extending over a portion of said third region, said surface region for receiving light; a ring of semiconductor material of said second conductivity type extending from the second region to a surface of said third region, said ring surrounding but not contacting said surface region to isolate a first portion of said third region located within said ring from a second portion of the third region located outside of said ring; a first electrical contact connected to said second portion of the third region; a second electrical contact connected to said ring; a third electrical contact connected to said first portion of the third region; a fourth electrical contact connected to said surface region; and a substrate of the first conductivity type, said first region comprising a first epitaxial layer extending over said substrate, said third region comprising a second epitaxial layer, said substrate having greater conductivity than said first and second epitaxial layers.
Claim 27
Dependent Claim
199 words
A tri-photodiode electrically responsive to incident light comprising: a first region of semiconductor material of a first conductivity type; a second region of semiconductor material of a second conductivity type opposite said first conductivity type extending over a portion of said first region; a third region of semiconductor material of said first conductivity type extending over at least portions of said and second regions; a surface region of semiconductor material of said second conductivity type extending over a portion of said third region, said surface region for receiving light; a ring of semiconductor material of said second conductivity type extending from the second region to a surface of said third region, said ring surrounding but not contacting said surface region to isolate a first portion of said third region located within said ring from a second portion of the third region located outside of said ring; a first electrical contact connected to said second portion of the third region; a second electrical contact connected to said ring; a third electrical contact connected to said first portion of the third region; a fourth electrical contact connected to said surface region; and a switch coupled to two of said electrical contacts.
Claim 28
Dependent Claim
199 words
A tri-photodiode electrically responsive to incident light comprising: a first region of semiconductor material of a first conductivity type; a second region of semiconductor material of a second conductivity type opposite said first conductivity type extending over a portion of said first region; a third region of semiconductor material of said first conductivity type extending over at least portions of said and second regions; a surface region of semiconductor material of said second conductivity type extending over a portion of said third region, said surface region for receiving light; a ring of semiconductor material of said second conductivity type extending from the second region to a surface of said third region, said ring surrounding but not contacting said surface region to isolate a first portion of said third region located within said ring from a second portion of the third region located outside of said ring; a first electrical contact connected to said second portion of the third region; a second electrical contact connected to said ring; a third electrical contact connected to said first portion of the third region; a fourth electrical contact connected to said surface region; and a switch coupled to two of said electrical contacts.
Claim 29
Dependent Claim
236 words
A tri-photodiode electrically responsive to incident light comprising: a first region of semiconductor material of a first conductivity type; a second region of semiconductor material of a second conductivity type opposite said first conductivity type extending over a portion of said first region; a third region of semiconductor material of said first conductivity type extending over at least portions of said first and second regions; a surface region of semiconductor material of said second conductivity type extending over a portion of said third region, said surface region for receiving light; a ring of semiconductor material of said second conductivity type extending from the second region to a surface of said third region, said ring surrounding but not contacting said surface region to isolate a first portion of said third region located within said ring from a second portion of the third region located outside of said ring; a first electrical contact connected to said second portion of the third region; a second electrical contact connected to said ring; a third electrical contact connected to said first portion of the third region; a fourth electrical contact connected to said surface region; and a first switch coupled to said first and third electrical contacts, a second switch coupled to said second and third electrical contacts, a third switch coupled to said third and fourth electrical contacts, and a fourth switch coupled to said second and fourth electrical contacts.
Claim 30
Dependent Claim
236 words
A tri-photodiode electrically responsive to incident light comprising: a first region of semiconductor material of a first conductivity type; a second region of semiconductor material of a second conductivity type opposite said first conductivity type extending over a portion of said first region; a third region of semiconductor material of said first conductivity type extending over at least portions of said first and second regions; a surface region of semiconductor material of said second conductivity type extending over a portion of said third region, said surface region for receiving light; a ring of semiconductor material of said second conductivity type extending from the second region to a surface of said third region, said ring surrounding but not contacting said surface region to isolate a first portion of said third region located within said ring from a second portion of the third region located outside of said ring; a first electrical contact connected to said second portion of the third region; a second electrical contact connected to said ring; a third electrical contact connected to said first portion of the third region; a fourth electrical contact connected to said surface region; and a first switch coupled to said first and third electrical contacts, a second switch coupled to said second and third electrical contacts, a third switch coupled to said third and fourth electrical contacts, and a fourth switch coupled to said second and fourth electrical contacts.
Claim 31
Dependent Claim
217 words
A tri-photodiode electrically responsive to incident light comprising: a first region of semiconductor material of a first conductivity type; a second region of semiconductor material of a second conductivity type opposite said first conductivity type extending over a portion of said first region; a third region of semiconductor material of said first conductivity type extending over at least portions of said first and second regions; a surface region of semiconductor material of said second conductivity type extending over a portion of said third region, said surface region for receiving light; a ring of semiconductor material of said second conductivity type extending from the second region to a surface of said third region, said ring surrounding but not contacting said surface region to isolate a first portion of said third region located within said ring from a second portion of the third region located outside of said ring; a first electrical contact connected to said second portion of the third region; a second electrical contact connected to said ring; a third electrical contact connected to said first portion of the third region; a fourth electrical contact connected to said surface region; and a substrate of the first conductivity type, said first region extending over said substrate, said substrate having a conductivity greater than said first and third regions.
Claim 32
Dependent Claim
217 words
A tri-photodiode electrically responsive to incident light comprising: a first region of semiconductor material of a first conductivity type; a second region of semiconductor material of a second conductivity type opposite said first conductivity type extending over a portion of said first region; a third region of semiconductor material of said first conductivity type extending over at least portions of said first and second regions; a surface region of semiconductor material of said second conductivity type extending over a portion of said third region, said surface region for receiving light; a ring of semiconductor material of said second conductivity type extending from the second region to a surface of said third region, said ring surrounding but not contacting said surface region to isolate a first portion of said third region located within said ring from a second portion of the third region located outside of said ring; a first electrical contact connected to said second portion of the third region; a second electrical contact connected to said ring; a third electrical contact connected to said first portion of the third region; a fourth electrical contact connected to said surface region; and a substrate of the first conductivity type, said first region extending over said substrate, said substrate having a conductivity greater than said first and third regions.
Claim 33
Dependent Claim
42 words
The tri-photodiode of claim 25 in which the first region, second region, third region, surface region, and ring comprise a photoconductive material selected from the group consisting of Si, Ge, ZnS, CdS, CdSe, GaAs, PbS, PbTe, InSb, InP, GaAlAs, AlAs, and PbSe.
Claim 34
Dependent Claim
22 words
The tri-photodiode of claim 25 in which the first conductivity type is p type and the second conductivity type is n type.
Claim 35
Dependent Claim
206 words
A tri-photodiode electrically responsive to incident light comprising: a first region of semiconductor material of a first conductivity type; a second region of semiconductor material of a second conductivity type opposite said first conductivity type extending over a portion of said first region; a third region of semiconductor material of said first conductivity type extending over at least portions of said first and second regions; a surface region of semiconductor material of said second conductivity type extending over a portion of said third region, said surface region for receiving light; a ring of semiconductor material of said second conductivity type extending from the second region to a surface of said third region, said ring surrounding but not contacting said surface region to isolate a first portion of said third region located within said ring from a second portion of the third region located outside of said ring; a first electrical contact connected to said second portion of the third region; a second electrical contact connected to said ring; a third electrical contact connected to said first portion of the third region; and a fourth electrical contact connected to said surface region; said first and third regions being lightly doped and said second region being heavily doped.
Claim 36
Dependent Claim
206 words
A tri-photodiode electrically responsive to incident light comprising: a first region of semiconductor material of a first conductivity type; a second region of semiconductor material of a second conductivity type opposite said first conductivity type extending over a portion of said first region; a third region of semiconductor material of said first conductivity type extending over at least portions of said first and second regions; a surface region of semiconductor material of said second conductivity type extending over a portion of said third region, said surface region for receiving light; a ring of semiconductor material of said second conductivity type extending from the second region to a surface of said third region, said ring surrounding but not contacting said surface region to isolate a first portion of said third region located within said ring from a second portion of the third region located outside of said ring; a first electrical contact connected to said second portion of the third region; a second electrical contact connected to said ring; a third electrical contact connected to said first portion of the third region; and a fourth electrical contact connected to said surface region; said first and third regions being lightly doped and said second region being heavily doped.
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