US5162886A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Hall device
Assignee: Sumitomo Electric Industries Ltd
•
Filing: 1991-05-09
•
Granted: 1992-11-10
•
Expires: 2011-05-09
Abstract
Abstract A Hall device having an active part made from semiconductor diamond. The Hall device works even at high temperature or in corrosive atmosphere. Boron doped diamond is suitable for controlling the acceptor concentration.
Inventors
- 👤 Yoshiki Nishibayashi
- 👤 Hideaki Nakahata
- 👤 Hiromu Shiomi
- 👤 Naoji Fujimori
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 12:42
CPC Classifications
H; H10; H10N; H10N52/00; H10N52/101; Y; Y10; Y10T; Y10T428/00; Y10T428/26; Y10T428/263; Y10T428/264; Y10T428/265; Y10T428/30
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
52 words
A Hall device comprising: a monocrystalline substrate; a diamond active layer with a thickness of 0.2 μm to 50 μm grown on said monocrystalline substrate, said active layer being doped with at least one of boron, beryllium, phosphorus, arsenic, sulfur, or selenium; and two pairs of electrodes formed on said active layer.
Claim 2
Dependent Claim
52 words
A Hall device comprising: a monocrystalline substrate; a diamond active layer with a thickness of 0.2 μm to 50 μm grown on said monocrystalline substrate, said active layer being doped with at least one of boron, beryllium, phosphorus, arsenic, sulfur, or selenium; and two pairs of electrodes formed on said active layer.
Claim 3
Dependent Claim
42 words
A Hall device as claimed in claim 1, wherein said active layer is grown by a chemical vapor deposition method using a material gas including hydrogen gas and hydrocarbon and one of oxygen gas, water, carbon monoxide, carbon dioxide or hydrogen peroxide.
Claim 4
Dependent Claim
60 words
A Hall device comprising: a monocrystalline substrate; a diamond active layer with a thickness of 0.2 μm to 50 μm grown on said monocrystalline substrate, said active layer being doped with at least one of boron, beryllium, phosphorus, arsenic, sulfur, or selenium; two pairs of electrodes formed on said active layer; and a protective layer deposited on said active layer.
Claim 5
Dependent Claim
60 words
A Hall device comprising: a monocrystalline substrate; a diamond active layer with a thickness of 0.2 μm to 50 μm grown on said monocrystalline substrate, said active layer being doped with at least one of boron, beryllium, phosphorus, arsenic, sulfur, or selenium; two pairs of electrodes formed on said active layer; and a protective layer deposited on said active layer.
Claim 6
Dependent Claim
17 words
A Hall device as claimed in claim 3, wherein said protective layer is formed on non-doped diamond.
Claim 7
Dependent Claim
28 words
A Hall device as claimed in claim 1, wherein said protective layer is formed of one of silicon nitride, boron nitride, titanium nitride, aluminum nitride or aluminum oxide.
Claim 8
Dependent Claim
45 words
A Hall device as claimed in claim 1, 4 or 5 wherein said active layer is grown by a chemical vapor deposition method using a material gas including hydrogen gas and hydrocarbon and one of oxygen gas, water, carbon monoxide, carbon dioxide or hydrogen peroxide.
Claim 9
Dependent Claim
19 words
A Hall device as claimed in claim 1, 2, 3, 4 or 5, wherein said monocrystalline substrate is diamond.
Claim 10
Dependent Claim
14 words
A Hall device as claimed in claim 6, wherein said monocrystalline substrate is diamond.
Claim 11
Dependent Claim
28 words
A Hall device as claimed in 1, 2, 3, 4 or 5, wherein the monocrystalline substrate is one of aluminum nitride, aluminum oxide, silicon nitride or silicon dioxide.
Claim 12
Dependent Claim
23 words
A Hall device as claimed in 6, wherein the monocrystalline substrate is one of aluminum nitride, aluminum oxide, silicon nitride or silicon dioxide.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-11-10 | 1996-05-11 | 1996-11-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-11-10 | 2000-05-11 | 2000-11-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-11-10 | 2004-05-11 | 2004-11-10 | $7700.00 | Window Closed / Lapsed |