US5162240A
Expired / Lapsed
US
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Method and apparatus of fabricating electric circuit pattern on thick and thin film hybrid multilayer wiring substrate
Assignee: Hitachi Ltd
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Filing: 1990-06-12
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Granted: 1992-11-10
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Expires: 2010-06-12
Abstract
Abstract A thick and thin film hybrid multilayer wiring substrate includes an adjustment layer provided between a thick film circuit and a thin film circuit in order to adjust positions of the thick film circuit and the thin film circuit with high integration and large area of the thick and thin film hybrid substrate. The adjustment layer is formed using a direct printing process in accordance with dispersion of the shape of the thick film circuit substrate to absorb the dispersion of the substrate. Further, in order to absorb dispersion of contraction of the thick film substrate due to sintering, a position of a mark provided on the substrate is detected by an electron beam and thereafter a connection pattern is formed to be connected to a regular pattern.
Inventors
- 👤 Norio Saitou
- 👤 Hideo Todokoro
- 👤 Katsuhiro Kuroda
- 👤 Satoru Fukuhara
- 👤 Genya Matsuoka
- 👤 Hideo Arima
- 👤 Hitoshi Yokono
- 👤 Takashi Inoue
- 👤 Hidetaka Shigi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 07:29
CPC Classifications
H; H05; H05K; H05K3/00; H05K3/46; H05K3/4644; H05K3/4679; H10; H10W; H10W46/00; H10W70/00; H10W70/01; H10W70/05; H10W70/60; H10W70/611; H10W70/67; H10W70/68; H10W70/685; H10W70/686; H05K1/00; H05K1/02; H05K1/0266; H05K1/0269; H05K1/03; H05K1/0306; H05K1/09; H05K1/092; H05K2201/00; H05K2201/09; H05K2201/09209; H05K2201/09654; H05K2201/09781; H05K2201/09818; H05K2201/09918; H05K3/4602; H05K3/4605; H05K3/467; H10W46/101; H10W46/601; H10W70/62; H10W70/65; H10W70/654; H10W70/655; H10W72/00; H10W72/071; H10W72/072; H10W72/07251; H10W72/20; H10W90/00; H10W90/701; H10W90/721; H10W90/724
Claims Analysis
Total Claims: 38
Claim 1
Independent Claim
77 words
A method of fabricating a pattern in a multilayer wiring substrate having a thick film and a thin film, the thin film having a regular pattern, the method comprising the steps of: measuring a position of an existing pattern formed on the thick film; forming a connection pattern based on the results of the measuring step; and, positioning the connection pattern in relation to the existing pattern, such that the existing pattern coincides with the regular pattern.
Claim 2
Independent Claim
77 words
A method of fabricating a pattern in a multilayer wiring substrate having a thick film and a thin film, the thin film having a regular pattern, the method comprising the steps of: measuring a position of an existing pattern formed on the thick film; forming a connection pattern based on the results of the measuring step; and, positioning the connection pattern in relation to the existing pattern, such that the existing pattern coincides with the regular pattern.
Claim 3
Dependent Claim
25 words
The method of claim 1 wherein the existing pattern is formed in the thin film and the regular pattern is formed in the thick film.
Claim 4
Dependent Claim
23 words
The method of claim 1 wherein the positioning step further includes placing the connection pattern between the existing pattern and the regular pattern.
Claim 5
Dependent Claim
13 words
A method according to claim 1, wherein the regular pattern is an LSI.
Claim 6
Dependent Claim
25 words
A method according to claim 1, wherein the connection pattern is provided in the thin film of the thick and thin film multilayer wiring substrate.
Claim 7
Dependent Claim
23 words
A method according to claim 1, wherein the pattern includes any one of the existing pattern, the regular pattern and the connection pattern.
Claim 8
Dependent Claim
30 words
A method according to claim 1, wherein blocks, which are formed from a substrate are prepared by division of the substrate and the connection pattern is formed for each block.
Claim 9
Dependent Claim
32 words
A method according to claim 7, wherein each of the blocks is formed by division of the substrate so that a length of the pattern is smaller than a minimum pattern interval.
Claim 10
Dependent Claim
14 words
A method according to claim 7, wherein the blocks are formed for each LSI.
Claim 11
Dependent Claim
48 words
A method according to claim 1, wherein a connecting pattern length L is determined by the square root of ΔX ij and ΔY ij , where ΔX ij and ΔY ij are expressed by at least a first-order term and a second-order term of X and Y coordinates.
Claim 12
Dependent Claim
42 words
A method according to claim 1, wherein sub-blocks which are formed form a substrate are prepared by division of the substrate to be smaller than a minimum pattern interval and the connection pattern is formed with a fixed value in the sub-block.
Claim 13
Dependent Claim
21 words
A method according to claim 1, wherein the connection pattern is formed in an adjustment layer provided in the thin film.
Claim 14
Dependent Claim
14 words
A method according to claim 12, wherein said adjustment layer is a single layer.
Claim 15
Dependent Claim
31 words
A method according to claim 12, wherein said adjustment layer comprises two layers and the pattern is formed in only one direction of two orthogonal directions in each of said layers.
Claim 16
Dependent Claim
33 words
A method according to claim 12, wherein said adjustment layer comprises a plurality of layers and the pattern is formed to be smaller than a minimum pattern interval in each of said layers.
Claim 17
Dependent Claim
24 words
A method according to claim 1, wherein the connection pattern is formed using a wiring layer and a power layer in the thin film.
Claim 18
Dependent Claim
19 words
A method according to claim 16, wherein the connection pattern is formed in a longitudinal direction of the pattern.
Claim 19
Dependent Claim
20 words
A method according to claim 16, wherein the connection pattern is formed to be smaller than a minimum pattern interval.
Claim 20
Dependent Claim
36 words
A method according to claim 1, wherein the pattern is formed on the basis of a measuring process of failure including disconnection and short circuit in wiring of the thick and thin film multilayer wiring substrate.
Claim 21
Dependent Claim
20 words
A method according to claim 19, wherein the pattern is formed in a modification layer provided in a thin film.
Claim 22
Dependent Claim
16 words
A method according to claim 20, wherein the connection pattern is formed in an adjustment layer.
Claim 23
Dependent Claim
20 words
A method according to claim 20, wherein the connection pattern is formed in a final layer in a thin film.
Claim 24
Dependent Claim
19 words
A method according to claim 1, wherein said step of measuring a position is made by an electron beam.
Claim 25
Dependent Claim
19 words
A method according to claim 1, wherein said step of measuring a position is made by an optical beam.
Claim 26
Dependent Claim
19 words
A method according to claim 1, wherein said step of measuring a position is made by an ion beam.
Claim 27
Dependent Claim
21 words
A method according to claim 23, comprising a step of making the beam small and deflecting the beam on a sample.
Claim 28
Dependent Claim
25 words
A method according to claim 26, wherein a pattern forming surface and a position measuring surface of sample correspond to both surfaces of the sample.
Claim 29
Dependent Claim
26 words
A method according to claim 19, wherein the measuring process of failure including disconnection and short circuit in wiring uses any of the position measuring means.
Claim 30
Dependent Claim
46 words
A method according to claim 19, wherein the measuring process of failure including disconnection and short circuit in wiring comprises at least a step of applying a potential or a potential variation to the wiring and a step of measuring the potential or the potential variation.
Claim 31
Dependent Claim
22 words
A method according to claim 1, wherein said step of measuring a position performs all required pattern measurement prior to pattern formation.
Claim 32
Dependent Claim
22 words
A method according to claim 1, wherein said step of measuring a position includes successively performing measurements for formation of each pattern.
Claim 33
Dependent Claim
20 words
A method according to claim 1, wherein said step of measuring a position comprises measuring positions of all existing patterns.
Claim 34
Dependent Claim
28 words
A method according to claim 1, wherein said step of measuring a position comprises sampling a plurality of positions of existing patterns and measuring the plurality of positions.
Claim 35
Dependent Claim
32 words
A method according to claim 1, wherein said step of measuring a position comprises providing a plurality of reference marks separately from the existing pattern and measuring positions of the reference marks.
Claim 36
Dependent Claim
38 words
A method according to claim 1, wherein said step of measuring a position comprises dividing all areas of a formation pattern into pixels smaller than a minimum pattern and measuring the position in accordance with presence of pattern.
Claim 37
Dependent Claim
20 words
A method according to claim 24, comprising steps of making the beam small and deflecting the beam on a sample.
Claim 38
Dependent Claim
20 words
A method according to claim 25, comprising steps of making the beam small and deflecting the beam on a sample.
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