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US5158897A
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US
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Method for the production of a semiconductor device by implanting fluorocarbon ions
Assignee: Sharp Corp
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Filing: 1991-08-02
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Granted: 1992-10-27
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Expires: 2011-08-02
Abstract
Abstract There is provided a method for producing a semiconductor device having a semiconductor layer in which carbon is implanted as an impurity. The method includes the steps of: implanting fluorocarbon ions in a semiconductor layer; and annealing the semiconductor layer to activate the implanted ions.
Inventors
- 👤 Hiroya Sato
- 👤 Toshiaki Kinosada
- 👤 Yasuhito Nakagawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 22:31
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/21; H10D; H10D10/00; H10D10/01; H10D10/021; H10D62/00; H10D62/80; H10D62/85; H10D62/854; H10P30/202; H10P30/206; H10P30/225; H10P30/28
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
40 words
A method for producing a semiconductor device having a semiconductor layer in which carbon is implanted as an impurity, comprising the steps of: implanting fluorocarbon ions in a semiconductor layer; and annealing the semiconductor layer to activate the implanted ions.
Claim 2
Independent Claim
40 words
A method for producing a semiconductor device having a semiconductor layer in which carbon is implanted as an impurity, comprising the steps of: implanting fluorocarbon ions in a semiconductor layer; and annealing the semiconductor layer to activate the implanted ions.
Claim 3
Dependent Claim
41 words
A method according to claim 1, wherein the fluorocarbon ions are selected from the group consisting of monofluorocarbon ions (CF + ), difluorocarbon ions (CF 2 + ), trifluorocarbon ions (CF 3 30 ) and tetrafluorocarbon ions (CF 4 + ).
Claim 4
Dependent Claim
28 words
A method according to claim 1, wherein the fluorocarbon ions are implanted in the semiconductor layer at a concentration of 1×10 12 to 2×10 15 cm -2 .
References Cited (Backward Citations)
JPS63244842A
Cited
JPS6457627A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-10-27 | 1996-04-27 | 1996-10-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-10-27 | 2000-04-27 | 2000-10-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-10-27 | 2004-04-27 | 2004-10-27 | $7700.00 | Window Closed / Lapsed |