Photoelectric transfer device

Claim 2

A photoelectric transfer device comprising a light-absorbing region which absorbs incident light to generate carriers and a multiplying layer region which multiplies said carriers, characterized in that a light-shielding layer is provided between said light-absorbing region and said multiplying layer region, so as to prevent the incident light from impinging on the surface of said multiplying layer region.

Claim 3

The device according to claim 1, wherein said multiply layer is a layer having a step-back structure in which band gap is varied continuously from the minimum band gap Eg2 to the maximum band gap Eg3 or a laminate of a plurality of the layers.

Claim 4

The device according to claim 1, wherein said multiplying layer is formed by laminating a layer with a higher dielectric constant and a layer with a lower dielectric constant alternately.

Claim 5

The device according to claim 1, wherein said photoabsorbing layer consists of a non-monocrystalline material.

Claim 6

The device according to claim 1, wherein said multiplying layer consists of a non-monocrystalline material.

Claim 7

The device according to claim 1, further comprising a charge injection preventing layer for preventing injection of unnecessary carriers from outside into said photoelectric transfer device.

Claim 8

The device according to claim 1, wherein said light-shielding layer is a metallic material.

Claim 9

The device according to claim 1, wherein said light-shielding layer is a semiconductor material containing impurities at a high concentration.

Claim 10

The device according to claim 1, wherein said light-shielding layer is an electroconductive ceramic material.

Claim 11

The device according to claim 4, wherein the band gap Eg1 of said light-absorbing layer is substantially uniform in the layer thickness direction.

Claim 12

The device according to claim 4, wherein the band gap Eg1 of said light-absorbing layer is nonuniform in the layer thickness direction.

Claim 13

A photoelectric transfer device comprising a light-absorbing region which absorbs incident light to generate carriers and a multiplying layer region which multiplies said carriers, characterized by having: a first electrode; a first charge injection preventing layer for preventing injection of unnecessary carriers from said first electrode into the photoelectric transfer device; said multiplying layer region; a light-shielding layer for preventing the incident light from impinging the surface of said multiplying layer region; said light-absorbing region; a second charge injection preventing impeding layer for preventing injection of unnecessary carriers from a second electrode into the photoelectric transfer device; and said second electrode which is light-transmissive in the order mentioned.

Claim 14

A photoelectric transfer device comprising a light-absorbing region which absorbs incident light to generate carriers and a multiplying layer region which multiplies said carriers, characterized by having: a first electrode; a first charge injection preventing layer for preventing injection of unnecessary carriers from said first electrode into the photoelectric transfer device; said multiplying layer region; a light-shielding layer for preventing the incident light from impinging the surface of said multiplying layer region; said light-absorbing region; a second charge injection preventing impeding layer for preventing injection of unnecessary carriers from a second electrode into the photoelectric transfer device; and said second electrode which is light-transmissive in the order mentioned.

Claim 15

The device according to claim 12, wherein said multiply layer is a layer having a step-back structure in which band gap is varied continuously from the minimum band gap Eg2 to the maximum band gap Eg3 or a laminate of a plurality of the layers.

Claim 16

The device according to claim 12, wherein said multiplying layer is formed by laminating a layer with a higher dielectric constant and a layer with a lower dielectric constant.

Claim 17

The device according to claim 12, wherein said photoabsorbing layer consists of a non-monocrystalline material.

Claim 18

The device according to claim 12, wherein said multiplying layer consists of a non-single crystalline material.

Claim 19

The device according to claim 12, wherein said light-shielding layer is a metallic material.

Claim 20

The device according to claim 12, wherein said light-shielding layer is a semiconductor material containing impurities at a high concentration.

Claim 21

The device according to claim 12, wherein said light-shielding layer is an electroconductive ceramic material.

Claim 22

The device according to claim 15, wherein the band gap Eg1 of said light-absorbing layer is substantially uniform in the layer thickness direction.

Claim 24

A photoelectric device for outputting an electrical signal generated at a plurality of photoelectric transfer portions, comprising: a plurality of photoelectric transfer portions, each having a light-shielding layer between a light-absorbing region which absorbs incident light to generate carriers and a multiplying layer region which multiplies said carriers, said light-shielding layer preventing the incident light from impinging on the surface of the multiplying layer region; a signal output portion having at least one means selected from accumulation means for accumulating an electrical signal generated at said plurality of photoelectric transfer portions, scanning means for scanning an electrical signal generated at said plurality of photoelectric transfer portions and reading means for reading an electrical signal generated at said plurality of photoelectric transfer portions; wherein said plurality of photoelectric transfer portions are electrically connected to said signal output portion.

Claim 25

A photoelectric device for outputting an electrical signal generated at a plurality of photoelectric transfer portions, comprising: a plurality of photoelectric transfer portions, each having a light-shielding layer between a light-absorbing region which absorbs incident light to generate carriers and a multiplying layer region which multiplies said carriers, said light-shielding layer preventing the incident light from impinging on the surface of the multiplying layer region; a signal output portion having at least one means selected from accumulation means for accumulating an electrical signal generated at said plurality of photoelectric transfer portions, scanning means for scanning an electrical signal generated at said plurality of photoelectric transfer portions and reading means for reading an electrical signal generated at said plurality of photoelectric transfer portions; wherein said plurality of photoelectric transfer portions are electrically connected to said signal output portion.

Claim 26

The device according to claim 22, wherein said multiplying layer is a layers having a step-back structure in which band gap is varied continuously from the minimum band gap Eg2 to the maximum band gap Eg3 or a laminate of a plurality of the layers.

Claim 27

The device according to claim 22, wherein said multiplying layer is formed by laminating a layer a layer with a higher dielectric constant and a layer with a lower dielectric constant alternately.

Claim 28

The device according to claim 22, wherein said photoabsorbing layer consists of a non-monocrystalline material.

Claim 29

The device according to claim 22, wherein said multiplying layer consists of a non-monocrystalline material.

Claim 30

The device according to claim 22, further comprising a charge injection preventing layer for preventing injection of unnecessary carriers from outside into said photoelectric transfer device.

Claim 31

The device according to claim 22, wherein said light-shielding layer is a metallic material.

Claim 32

The device according to claim 22, wherein said light-shielding layer is a semiconductor material containing impurities at a high concentration.

Claim 33

The device according to claim 25, wherein the band gap Eg1 of said light-absorbing layer is substantially uniform in the layer thickness direction.

Claim 34

The device according to claim 25, wherein the band gap Eg1 of said light-absorbing layer is nonuniform in the layer thickness direction.