Semiconductor nonvolatile memory device integrated with booster

Claim 2

A semiconductor nonvolatile memory device comprising: a supply voltage detection circuit controllable by a booster control signal to operate for detecting if a power supply voltage applied thereto is above a predetermined level and for producing an output signal corresponding thereto only when the booster control signal is present; logic means receptive of the booster control signal and the output signal from the supply voltage detection circuit for performing a logic operation and producing an output signal; a voltage booster controlled by an output signal from the logic means only when the supply voltage detection circuit is operating and when the output signal from the supply voltage detection circuit shows that the power supply voltage is above the predetermined level; and a nonvolatile memory operated by a boosted voltage from the voltage booster.

Claim 3

A semiconductor nonvolatile memory device as claimed in claim 1, wherein the logic means comprises an AND gate.

Claim 4

A semiconductor nonvolatile memory device as claimed in claim 2, wherein the output signal from the voltage detection circuit is held at a high level when the supply voltage is above a predetermined level.

Claim 5

A semiconductor nonvolatile memory device comprising: means receptive of a power supply voltage for detecting if the power supply voltage is greater than a predetermined level comprising means responsive to a control signal for permitting detection when the control signal is at a first logic level and preventing detection when the control signal is at a second logic level, and means for producing an output signal at one logic level when the control signal is at the first logic level and the power supply voltage is greater then the predetermined level and for producing an output signal at a second logic level when the control signal is at the second logic level of the power supply voltage is less then the predetermined level; logic means receptive of the control signal and the output signal for producing a first logic output signal when the control signal is at a first logic level and the output signal is at the one logic level; a voltage booster only operative in responsive to the first logic output signal to produce a boosted voltage; and a nonvolatile semiconductor memory operated by the booster voltage.

Claim 6

A semiconductor nonvolatile memory device comprising: means receptive of a power supply voltage for detecting if the power supply voltage is greater than a predetermined level comprising means responsive to a control signal for permitting detection when the control signal is at a first logic level and preventing detection when the control signal is at a second logic level, and means for producing an output signal at one logic level when the control signal is at the first logic level and the power supply voltage is greater then the predetermined level and for producing an output signal at a second logic level when the control signal is at the second logic level of the power supply voltage is less then the predetermined level; logic means receptive of the control signal and the output signal for producing a first logic output signal when the control signal is at a first logic level and the output signal is at the one logic level; a voltage booster only operative in responsive to the first logic output signal to produce a boosted voltage; and a nonvolatile semiconductor memory operated by the booster voltage.

Claim 7

The semiconductor nonvolatile memory device according to claim 4, wherein the logic means comprises an AND gate.

Claim 8

The semiconductor nonvolatile memory device according to claim 5, wherein the control signal and the output signal are both high to produce the first logic output.