Semiconductor device

Claim 2

A semiconductor device comprising: a collector layer; a base layer; an emitter layer, the collector layer, the base layer and the emitter layer sequentially laminated on a semiconductor substrate; and a high-resistivity layer provided in contact with a peripheral edge of the emitter layer, wherein a peripheral portion of the emitter layer contacted with the high-resistivity layer is completely depleted throughout a full thickness thereof.

Claim 3

A semiconductor device as set forth in claim 1, wherein the peripheral portion of the emitter layer is reduced in thickness relative to portions of the emitter layer other than the peripheral portion and is completely depleted throughout a full thickness thereof.

Claim 4

A semiconductor device as set forth in claim 1, wherein the high-resistivity layer is directly contacted with the peripheral edge of the emitter layer without a emitter contact layer therebetween.

Claim 5

A semiconductor device as set forth in claim 1 or 2, further comprising an emitter electrode made of metal extended onto the thickness-reduced portion of the emitter layer to form Schottky junction with the portion of the emitter layer.

Claim 6

A semiconductor device as set forth in any of claims 1 and 2, further comprising an emitter electrode extending onto the high-resistivity layer beyond the depleted peripheral portion of the emitter layer so as to be connected to another element or a pad region.

Claim 7

A semiconductor device as set forth in claim 1, further comprising: an emitter contact layer formed on the emitter layer, the size of the emitter contact layer being smaller than the size of the emitter layer; a high-resistivity region for isolating between elements, the high-resistivity region being formed around an element formation region by proton implantation; and an emitter electrode extending onto a part of the emitter layer contacted with an end face of the high-resistivity region for isolating between elements, wherein a part of the emitter layer uncovered with the emitter contact layer is completely depleted throughout a full thickness thereof by Schottky junction between the emitter electrode and the emitter layer.

Claim 8

A semiconductor device as set forth in claim 1, wherein the base layer extends only to one side of an interface region between the emitter layer and the base layer, and an interface region between a base-collector isolation region and the emitter layer is completely depleted.

Claim 9

A semiconductor device comprising: a heterojunction bipolar transistor including an n + type GaAs layer as a collector contact layer, an n - type GaAs layer as a collector layer, a p + type Al x Ga 1-x As graded-composition layer as a base layer, an n - type Al x Ga 1-x As as an emitter layer, and an n + type InAl x Ga 1-x As layer as an emitter contact layer sequentially laminated on a semi-insulating GaAs substrate; a high-resistivity layer for isolating the base layer from the collector layer, the high-resistivity layer being formed by boron ion implantation; a high-resistivity region for isolating between elements, the high-resistivity region being formed around an element formation region by proton implantation; a collector electrode contacted with the collector layer; a base electrode contacted with the base layer; and an emitter electrode extending onto a part of the emitter layer contacted with an end face of the high-resistivity region, wherein the emitter electrode and the part of the emitter layer form Schottky junction therebetween and the part of the emitter layer is completely depleted throughout a full thickness thereof.

Claim 10

A semiconductor device comprising: a heterojunction bipolar transistor including an n + type GaAs layer as a collector contact layer, an n - type GaAs layer as a collector layer, a p + type Al x Ga 1-x As graded-composition layer as a base layer, an n - type Al x Ga 1-x As as an emitter layer, and an n + type InAl x Ga 1-x As layer as an emitter contact layer sequentially laminated on a semi-insulating GaAs substrate; a high-resistivity layer for isolating the base layer from the collector layer, the high-resistivity layer being formed by boron ion implantation; a high-resistivity region for isolating between elements, the high-resistivity region being formed around an element formation region by proton implantation; a collector electrode contacted with the collector layer; a base electrode contacted with the base layer; and an emitter electrode extending onto a part of the emitter layer contacted with an end face of the high-resistivity region, wherein the emitter electrode and the part of the emitter layer form Schottky junction therebetween and the part of the emitter layer is completely depleted throughout a full thickness thereof.

Claim 11

A semiconductor device comprising: a heterojunction bipolar transistor including a collector layer, a base layer and an emitter layer sequentially laminated on a semi-insulating substrate; a high-resistivity layer for isolating the base layer from the collector layer, the high-resistivity layer being formed by ion implantation; a high-resistivity region for isolating between elements, the high-resistivity region being formed around an element formation region by proton implantation; a collector electrode contacted with the collector layer; a base electrode contacted with the base layer; an emitter contact layer having a high concentration formed on the emitter layer; an emitter electrode as contacted with the emitter contact layer; and a high-resistivity layer formed by ion implantation on the emitter contact layer at least on a part thereof adjacent to an end face of the high-resistivity region, wherein the part of the emitter layer adjacent to the end face of the high-resistivity region is completely depleted throughout a full thickness thereof.

Claim 12

A semiconductor device comprising: a heterojunction bipolar transistor including a collector layer, a base layer and an emitter layer sequentially laminated on a semi-insulating substrate; a high-resistivity layer for isolating the base layer from the collector layer, the high-resistivity layer being formed by ion implantation; a high-resistivity region for isolating between elements, the high-resistivity region being formed around an element formation region by proton implantation; a collector electrode contacted with the collector layer; a base electrode contacted with the base layer; an emitter contact layer having a high concentration formed on the emitter layer; an emitter electrode as contacted with the emitter contact layer; and a high-resistivity layer formed by ion implantation on the emitter contact layer at least on a part thereof adjacent to an end face of the high-resistivity region, wherein the part of the emitter layer adjacent to the end face of the high-resistivity region is completely depleted throughout a full thickness thereof.