Patent US5153557A successfully refreshed from Google Patents.
US5153557A
Expired / Lapsed
US
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Magnetic field sensor contacts
Assignee: Motors Liquidation Co
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Filing: 1991-01-28
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Granted: 1992-10-06
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Expires: 2011-01-28
Abstract
Abstract A magnetic field sensor, such as a magnetoresistor, Hall effect device or magnetotransistor, comprising an active layer of indium antimonide on the surface of a substrate having a length substantially greater than its width. A conductive contact is on the active layer at each end thereof and a plurality of shorting bar contacts are on the active layer and spaced along the length of the active layer between the end contacts. The contacts are each of a thin layer of a highly conductive n-type conductivity semiconductor material which has a low sheet resistivity and a low contact resistance with the active layer. A layer of a conductive metal may be provided on the semiconductor material layer of the contact, and a thin layer of highly conductive n-type indium antimonide may be provided between the semiconductive material layer and the active layer.
Inventors
- 👤 Dale L. Partin
- 👤 Joseph P. Heremans
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 07:47
CPC Classifications
H; H10; H10N; H10N50/00; H10N50/80
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
96 words
A magnetic field sensor comprising: a substrate having a surface; an active layer of indium antimonide on said substrate surface; a conductive contact on said active layer, said contact comprising a thin layer of an n-type conductivity semiconductor material which is highly conductive so as to have a low sheet resistance and a low contact resistance with the active layer, wherein the semiconductor material of the contact has a lattice constant close to that of indium antimonide; and a thin layer of a highly doped n-type indium antimonide between the semiconductor material and the active layer.
Claim 2
Dependent Claim
96 words
A magnetic field sensor comprising: a substrate having a surface; an active layer of indium antimonide on said substrate surface; a conductive contact on said active layer, said contact comprising a thin layer of an n-type conductivity semiconductor material which is highly conductive so as to have a low sheet resistance and a low contact resistance with the active layer, wherein the semiconductor material of the contact has a lattice constant close to that of indium antimonide; and a thin layer of a highly doped n-type indium antimonide between the semiconductor material and the active layer.
Claim 3
Dependent Claim
20 words
The magnetic field sensor of claim 1 further comprising a layer of a conductive metal on the semiconductor material layer.
Claim 4
Dependent Claim
27 words
The magnetic field sensor of claim 2 further comprising a thin layer of highly doped n-type indium antimonide between the semiconducor material layer and the active layer.
Claim 5
Dependent Claim
34 words
The magnetic field sensor of claim 1 in which the semiconductor material layer and the highly doped indium antimonide layer of the contact are each of a thickness of between 100 and 2000 Angstroms.
Claim 6
Dependent Claim
22 words
The magnetic field sensor of claim 4 in which the active layer is of a thickness of no greater than 5 micrometers.
Claim 7
Dependent Claim
136 words
A magnetoresistor comprising: a substrate having a surface; a narrow active layer of n-type conductivity indium antimonide on said substrate surface having a length substantially greater than its width; a conductive contact on said active layer at each end thereof; and a plurality of shorting bar contacts on said active layer spaced along the length of the active layer between the end contacts; each of said shorting bar contacts comprising a thin layer of an n-type conductivity semiconductor material which is highly conductive so as to have a low sheet resistance and a low contact resistance with the active layer, wherein the semiconductor material of the contact has a lattice constant close to that of indium antimonide; and a thin layer of highly doped n-type indium antimonide between the semiconductor material layer and the active layer.
Claim 8
Dependent Claim
136 words
A magnetoresistor comprising: a substrate having a surface; a narrow active layer of n-type conductivity indium antimonide on said substrate surface having a length substantially greater than its width; a conductive contact on said active layer at each end thereof; and a plurality of shorting bar contacts on said active layer spaced along the length of the active layer between the end contacts; each of said shorting bar contacts comprising a thin layer of an n-type conductivity semiconductor material which is highly conductive so as to have a low sheet resistance and a low contact resistance with the active layer, wherein the semiconductor material of the contact has a lattice constant close to that of indium antimonide; and a thin layer of highly doped n-type indium antimonide between the semiconductor material layer and the active layer.
Claim 9
Dependent Claim
18 words
The magnetoresistor of claim 6 further comprising a layer of a conductive metal on the semiconductor material layer.
Claim 10
Dependent Claim
24 words
The magnetoresistor of claim 6 further comprising a layer of highly doped n-type indium antimonide between the semiconductor material layer and the active layer.
Claim 11
Dependent Claim
32 words
The magnetoresistor of claim 8 in which the semiconductor material layer and the highly doped indium antimonide layer of the contact are each of a thickness of between 100 and 2000 Angstroms.
Claim 12
Dependent Claim
26 words
The magnetoresistor of claim 8 in which each of the end contacts comprises a layer of the highly conductive n-type semiconductor material on the active layer.
Claim 13
Dependent Claim
25 words
The magnetoresistor of claim 10 in which each of the end contacts further comprises a layer of a conductive metal over the semiconductor material layer.
Claim 14
Dependent Claim
31 words
The magnetoresistor of claim 11 in which each of the end contacts further comprises a layer of highly conductive n-type indium antimonide between the semiconductor material layer and the active layer.
Claim 15
Dependent Claim
141 words
A magnetoresistor comprising: a substrate having a surface; a narrow active layer of n-type conductivity indium antimonide on said substrate surface, said active layer having a length substantially greater than its width; a conductive contact on said active layer at each end thereof; a plurality of shorting bar contacts on said active layer spaced along the length of the active layer between the end contacts; each of said end contacts comprising a thin layer of an n-type conductivity semiconductor material which is highly conductive so as to have a low sheet resistance and a low contact resistance with the active layer, wherein the semiconductor material of the contact has a lattice constant close to that of the indium antimonide; and a thin layer of highly doped n-type indium antimonide between the semiconductor material layer of the contact and the active layer.
Claim 16
Dependent Claim
141 words
A magnetoresistor comprising: a substrate having a surface; a narrow active layer of n-type conductivity indium antimonide on said substrate surface, said active layer having a length substantially greater than its width; a conductive contact on said active layer at each end thereof; a plurality of shorting bar contacts on said active layer spaced along the length of the active layer between the end contacts; each of said end contacts comprising a thin layer of an n-type conductivity semiconductor material which is highly conductive so as to have a low sheet resistance and a low contact resistance with the active layer, wherein the semiconductor material of the contact has a lattice constant close to that of the indium antimonide; and a thin layer of highly doped n-type indium antimonide between the semiconductor material layer of the contact and the active layer.
Claim 17
Dependent Claim
21 words
The magnetoresistor of claim 13 further comprising a layer of a conductive metal on the semiconductor material layer of the contact.
Claim 18
Dependent Claim
28 words
The magnetoresistor of claim 14 further comprising a thin layer of highly doped n-type indium antimonide between the semiconductor material layer of the contact and the active layer.
Claim 19
Dependent Claim
32 words
The magnetoresistor of claim 15 in which the semiconductor material layer and the highly doped indium antimonide layer of the contact are each of a thickness of between 100 and 2000 Angstroms.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-10-06 | 1996-04-06 | 1996-10-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-10-06 | 2000-04-06 | 2000-10-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-10-06 | 2004-04-06 | 2004-10-06 | $7700.00 | Window Closed / Lapsed |