Abstract A semiconductor laser has a super-lattice active layer to which a high density impurity as equal to or over 1×10 17 cm -3 is selectively diffused in the vicinity of a facet of the semiconductor laser, so that a high power output is realized. The active layer in the impurity diffusion region is formed in a three-layer structure comprising first, second and third semiconductor layers. The second semiconductor layer has an opposite type of conductivity as the first and third semiconductor layer, and is sandwiched thereby. In such a structure, a depletion layer is generated around the active layer, so that injection of current into the active layer is prevented. The blocking layer also protects the active layer from the strain stress during a process of attaching the semiconductor laser to a heatsink. In the fabricating process, a dielectric is temporarily formed to be used as a mask in a selective diffusion and in a selective growth, so that it is not necessary to align a selective growth mask and an impurity diffusion region. An impurity selective diffusion into the multi-layer epitaxial layers having GaAs layer or AlGaAs layer as a surface layer is carried out using As compound as an impurity source, so that the crystal quality of the surface layer is hard to decrease.
In a semiconductor laser, comprising: a semiconductor substrate which has one type of conductivity; a first cladding layer formed on said substrate, said first cladding layer having the same type of conductivity as said substrate; a super-lattice active layer formed on said first cladding layer; a second cladding layer formed on said active layer, said second cladding layer having the opposite type of conductivity as said first cladding layer, and said second cladding layer with said first cladding layer and said active layer forming a double-hetero structure; impurity diffusion regions formed in all the layers of the double-hetero structure in the vicinity of both laser facets of said semiconductor laser, said active layer in said impurity diffusion regions having the impurity density of equal to or over 1×10 17 cm -3 ; and a blocking layer formed on said second cladding layer in said impurity diffusion regions, said blocking layer having the same type of conductivity as said first cladding layer.
Claim 2
Dependent Claim
161 words
In a semiconductor laser, comprising: a semiconductor substrate which has one type of conductivity; a first cladding layer formed on said substrate, said first cladding layer having the same type of conductivity as said substrate; a super-lattice active layer formed on said first cladding layer; a second cladding layer formed on said active layer, said second cladding layer having the opposite type of conductivity as said first cladding layer, and said second cladding layer with said first cladding layer and said active layer forming a double-hetero structure; impurity diffusion regions formed in all the layers of the double-hetero structure in the vicinity of both laser facets of said semiconductor laser, said active layer in said impurity diffusion regions having the impurity density of equal to or over 1×10 17 cm -3 ; and a blocking layer formed on said second cladding layer in said impurity diffusion regions, said blocking layer having the same type of conductivity as said first cladding layer.
Claim 3
Dependent Claim
23 words
A semiconductor laser, according to claim 1: wherein said first cladding layer, said active layer and said second cladding layer are epitaxial layers.
Claim 4
Dependent Claim
17 words
A semiconductor laser, according to claim 1: wherein said active layer is a natural super-lattice active layer.
Claim 5
Dependent Claim
23 words
A semiconductor laser, according to claim 1: wherein said active layer is a layer selected from a GaInP layer and a AlGaInP layer.