Noise absorbing circuit suitable for semiconductor integrated circuits

Claim 2

A noise absorbing circuit comprising: an output variation detecting circuit for detecting a variation in an output signal level of an output buffer circuit which changes from a high level to a low level; an input level detecting circuit for detecting such a condition that an input signal line has a high voltage level; a capacitor connected to said input signal line; and a gate circuit connected between said capacitor and said input signal line; said gate circuit being closed so as to connect said capacitor to said input signal line if the voltage level of said input signal line is high when the output level of said output buffer circuit changes from a high level to a low level.

Claim 3

A semiconductor integrated circuit comprising: an input buffer circuit having an input signal line and an input terminal coupled to the input signal line; an output buffer circuit having an output terminal; a first detecting circuit for detecting that said output buffer circuit has outputted a low level signal from the output terminal thereof in place of a high level signal, said first detecting circuit generating a first signal upon the low level signal being detected thereby; a second detecting circuit for detecting that the input terminal of said input buffer circuit receives a high level signal, said second detecting circuit generating a second signal upon the high level signal being detected at the input terminal and the first signal being generated; a capacitor having a first terminal and a second terminal, the first terminal being grounded; and gating means for coupling the second terminal to the input signal line, said gating means connecting the second terminal to the input signal line upon the second signal being detected.

Claim 4

A semiconductor integrated circuit comprising: an input buffer circuit having an input signal line and an input terminal coupled to the input signal line; an output buffer circuit having an output terminal; a first detecting circuit for detecting that said output buffer circuit has outputted a low level signal from the output terminal thereof in place of a high level signal, said first detecting circuit generating a first signal upon the low level signal being detected thereby; a second detecting circuit for detecting that the input terminal of said input buffer circuit receives a high level signal, said second detecting circuit generating a second signal upon the high level signal being detected at the input terminal and the first signal being generated; a capacitor having a first terminal and a second terminal, the first terminal being grounded; and gating means for coupling the second terminal to the input signal line, said gating means connecting the second terminal to the input signal line upon the second signal being detected.

Claim 5

A circuit according to claim 2, wherein said second detecting circuit includes an AND circuit.

Claim 6

A circuit according to claim 3, wherein said gating means includes a transistor having a first electrode, a second electrode, and a control electrode, the control electrode being connected to the output terminal of the AND circuit, the first electrode and the second electrode being respectively connected to the second terminal of said capacitor and the input signal line.

Claim 7

A semiconductor integrated circuit comprising: a first detecting circuit generating a first detection signal when voltage noise is produced within the semiconductor integrated circuit; a first circuit having a first input node and a first output node, the first circuit receiving a first input signal at the first input node thereof and outputting a first output signal from the first output node thereof in response to the first input signal; a second circuit coupled to the first output node, and having a second output node, the second circuit receiving the first output signal from the first output node and outputting a second output signal from the second output node thereof in response to the first output signal; a capacitor coupled to the first output node; and a transistor coupling said capacitor to said first output node in response to said first detection signal.

Claim 8

A semiconductor integrated circuit comprising: a first detecting circuit generating a first detection signal when voltage noise is produced within the semiconductor integrated circuit; a first circuit having a first input node and a first output node, the first circuit receiving a first input signal at the first input node thereof and outputting a first output signal from the first output node thereof in response to the first input signal; a second circuit coupled to the first output node, and having a second output node, the second circuit receiving the first output signal from the first output node and outputting a second output signal from the second output node thereof in response to the first output signal; a capacitor coupled to the first output node; and a transistor coupling said capacitor to said first output node in response to said first detection signal.

Claim 9

The circuit according to claim 5, further comprising: an output terminal; and an output buffer circuit outputting a third output signal from said output terminal; wherein said first detecting circuit generates the first detection signal upon detecting a change in the magnitude of the third output signal.

Claim 10

The circuit according to claim 6 wherein said first detecting circuit generates the first detection signal upon detecting a change in magnitude of the third output signal from a high level to a low level.

Claim 11

The circuit according to claim 5 wherein said first and second circuits are included in an input buffer having an input terminal, the input terminal being connected to the first input node.

Claim 12

The circuit according to claim 8, further comprising: an output buffer circuit including an output terminal coupled to output a third output signal; wherein said first detecting circuit generates the first detection signal upon detecting a change in the magnitude of the third output signal.

Claim 13

The circuit according to claim 9 wherein said first detecting circuit generates the first detection signal upon detecting a change in the magnitude of the third output signal from a high level to a low level.

Claim 14

The circuit according to claim 10 further comprising a second detecting circuit generating a second detection signal upon detecting that the high level signal has been applied to the input terminal when the first detection signal is generated.

Claim 15

The circuit according to claim 11 wherein said transistor connects said capacitor with the first output node in response to the second detection signal.

Claim 16

A semiconductor integrated circuit comprising: a first detecting circuit generating a first detection signal when voltage noise is produced within the semiconductor integrated circuit; a first circuit having a first input node and a first output node, said first circuit receiving a first input signal at the first input node and outputting a first output signal from the first output node in response to the first input signal; a second circuit, coupled to the first output node and having a second output node, the second circuit receiving the first output signal from the first output node and outputting a second output signal from the second output node in response to the first output signal; a capacitor coupled to the first output node, said capacitor having first and second electrodes, the first electrode of said capacitor being grounded; and a transistor, having a gate electrode, to couple the second electrode of said capacitor with the first output node in response to the first detection signal.

Claim 17

A semiconductor integrated circuit comprising: a first detecting circuit generating a first detection signal when voltage noise is produced within the semiconductor integrated circuit; a first circuit having a first input node and a first output node, said first circuit receiving a first input signal at the first input node and outputting a first output signal from the first output node in response to the first input signal; a second circuit, coupled to the first output node and having a second output node, the second circuit receiving the first output signal from the first output node and outputting a second output signal from the second output node in response to the first output signal; a capacitor coupled to the first output node, said capacitor having first and second electrodes, the first electrode of said capacitor being grounded; and a transistor, having a gate electrode, to couple the second electrode of said capacitor with the first output node in response to the first detection signal.

Claim 18

The circuit according to claim 13 wherein said first detecting circuit generates the first detection signal upon detecting a change in the magnitude of the third output signal from a high level to a low level.

Claim 19

The circuit according to claim 13 wherein said first and second circuits are included in an input buffer circuit having an input terminal which is connected to the first input node.

Claim 20

The circuit according to claim 15 wherein said first detecting circuit generates the first detection signal upon detecting a change in the magnitude of the third output signal from a high level to a low level.

Claim 21

The circuit according to claim 16 further comprising a second detecting circuit generating a second detection signal upon detecting that the high level signal has been applied to the input terminal when the first detection signal is generated.

Claim 22

The circuit according to claim 17 wherein said transistor connects said capacitor with the first output node upon the second detection signal being received at the gate electrode of said transistor.