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US5151408A
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Process for preparing a-axis oriented high-temperature superconducting thin films
Assignee: Sumitomo Electric Industries Ltd
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Filing: 1991-03-11
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Granted: 1992-09-29
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Expires: 2011-03-11
Abstract
Abstract A process for preparing a-axis oriented thin film of oxide superconducting material on a substrate by two steps. In the first step, an under-layer of an oxide superconducting material is deposited on the substrate under such a condition that the substrate is heated at a temperature which is suitable to realize an a-axis orientation of crystal of the oxide superconducting material. In the second step, an upper-layer of the same oxide superconducting material is deposited on a surface of the resulting under-layer under such a condition that the substrate is heated at a temperature which is lowered by 10° to 100° C. than the temperature which is used in the first step.
Inventors
- 👤 Saburo Tanaka
- 👤 Hidenori Nakanishi
- 👤 Hideo Itozaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 04:03
CPC Classifications
H; H10; H10N; H10N60/00; H10N60/01; H10N60/0268; H10N60/0296; H10N60/0576; H10N60/0632; Y; Y10; Y10S; Y10S505/00; Y10S505/725; Y10S505/73; Y10S505/731; Y10S505/732
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
116 words
A process for preparing a-axis oriented thin film of oxide superconducting material, characterized by the steps of: depositing an under-layer of said oxide superconducting material on a substrate under such a condition that said substrate is heated at a temperature which is suitable to realize an a-axis orientation of crystal of said oxide superconducting material, and then depositing an upper-layer of said oxide superconducting material on a surface of said under-layer under such a condition that said substrate is heated at a temperature which is higher by 10° to 100° C. than said temperature which is used in the first depositing step, wherein said under-layer is deposited up to a thickness of 20 to 1,000 A.
Claim 2
Dependent Claim
116 words
A process for preparing a-axis oriented thin film of oxide superconducting material, characterized by the steps of: depositing an under-layer of said oxide superconducting material on a substrate under such a condition that said substrate is heated at a temperature which is suitable to realize an a-axis orientation of crystal of said oxide superconducting material, and then depositing an upper-layer of said oxide superconducting material on a surface of said under-layer under such a condition that said substrate is heated at a temperature which is higher by 10° to 100° C. than said temperature which is used in the first depositing step, wherein said under-layer is deposited up to a thickness of 20 to 1,000 A.
Claim 3
Dependent Claim
15 words
The process set forth in claim 1 wherein said upper-layer is produced by vacuum-evaporation method.
Claim 4
Dependent Claim
15 words
The process set forth in claim 2 wherein said under-layer is produced by sputtering method.
Claim 5
Dependent Claim
14 words
The process set forth in claim 3 wherein said sputtering method is RF sputtering.
Claim 6
Dependent Claim
17 words
The process set forth in claim 4 wherein said substrate is a single crystal substrate of oxide.
Claim 7
Dependent Claim
37 words
The process set forth in claim 5 wherein said substrate is a single crystal substrate of oxide selected from the group consisting of MgO, SrTiO 3 , LaAlO 3 , LaGaO 3 and yttrium stabilized zirconia (YSZ).
Claim 8
Dependent Claim
18 words
The process set forth in claim 6 wherein said oxide superconducting material is Y-Ba-Cu-O oxides or Bi-Sr-Ca-Cu-O oxides.
Claim 9
Dependent Claim
19 words
The process set forth in claim 1 wherein both of said under-layer and upper-layer are produced by sputtering method.
Claim 10
Dependent Claim
14 words
The process set forth in claim 8 wherein said sputtering method is RF sputtering.
Claim 11
Dependent Claim
17 words
The process set forth in claim 9 wherein said substrate is a single crystal substrate of oxide.
Claim 12
Dependent Claim
37 words
The process set forth in claim 10 wherein said substrate is a single crystal substrate of oxide selected from the group consisting of MgO, SrTiO 3 , LaAlO 3 , LaGaO 3 and yttrium stabilized zirconia (YSZ).
Claim 13
Dependent Claim
18 words
The process set forth in claim 11 wherein said oxide superconducting material is Y-Ba-Cu-O oxides or Bi-Sr-Ca-Cu-O oxides.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-09-29 | 1996-03-30 | 1996-09-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-09-29 | 2000-03-30 | 2000-09-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-09-29 | 2004-03-30 | 2004-09-29 | $7700.00 | Window Closed / Lapsed |