Patent US5150191A successfully refreshed from Google Patents.
US5150191A
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US
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P-type II-VI compound semiconductor doped
Assignee: Toshiba Corp
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Filing: 1990-11-21
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Granted: 1992-09-22
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Expires: 2010-11-21
Abstract
Abstract An optical semiconductor device is provided with a p-type ZnSe semiconductor layer. Si, Cl and O atoms are added, as dopants, to the ZnSe semiconductor layer. Associations of the Si, Cl and O atoms are formed to define a shallow acceptor level in the semiconductor layer. Each of the associations comprises one Si atom, one Cl atom and one O atom by which the lattice points of Se are displaced between those crystal lattice points in the semiconductor layer which are adjacent to one another.
Inventors
- 👤 Nawoto Motegi
- 👤 Tsutomu Uemoto
- 👤 Atsushi Kamata
- 👤 Hiroshi Mitsuhashi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 13:39
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/823; H10H20/8232; H10D; H10D62/00; H10D62/80; H10D62/86; H10D62/864; H10F; H10F77/00; H10F77/10; H10F77/12; H10F77/123; H10F77/1233; H10H20/01; H10H20/011; H10H20/012; H10H20/0125; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2911; H10P14/2913; H10P14/2916; H10P14/32; H10P14/3202; H10P14/3224; H10P14/3231; H10P14/34; H10P14/3402; H10P14/3424; H10P14/3428; H10P14/3431; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
97 words
An optical semiconductor device provided with a p-type group II-VI compound semiconductor layer wherein dopants selected from group VII atoms, atoms of groups III and IV, and atoms of groups IV and VII are added and associations are formed so that shallow acceptor level can be defined, each of the associations is selected from the group IV atom and the group III atom, the group IV atom and group VII atom, and the group VII atom and a vacancy of a group II atom, and is formed between those lattice points which are adjacent to each other.
Claim 2
Dependent Claim
97 words
An optical semiconductor device provided with a p-type group II-VI compound semiconductor layer wherein dopants selected from group VII atoms, atoms of groups III and IV, and atoms of groups IV and VII are added and associations are formed so that shallow acceptor level can be defined, each of the associations is selected from the group IV atom and the group III atom, the group IV atom and group VII atom, and the group VII atom and a vacancy of a group II atom, and is formed between those lattice points which are adjacent to each other.
Claim 3
Dependent Claim
25 words
The optical semiconductor device according to claim 1, wherein the density of each of the doped atoms is larger than 1×10 17 cm -3 .
Claim 4
Dependent Claim
57 words
The optical semiconductor device according to claim 1, wherein the dopants are selected from atoms of the groups III and IV and atoms of the groups IV and VII and the density of the group IV atom in the semiconductor layer is substantially equal to or larger than that of the group III or VII atom therein.
Claim 5
Dependent Claim
21 words
The optical semiconductor device according to claim 1, wherein the semiconductor layer consists of ZnSe or a mixed crystal of ZnSe.
Claim 6
Dependent Claim
58 words
The optical semiconductor device according to claim 4, wherein B and C atoms are added to the semiconductor layer and the acceptor level in the semiconductor layer is defined by the association of the B atom by which the lattice point of Zn is displaced and the C atom by which the lattice point of Se is displaced.
Claim 7
Dependent Claim
47 words
The optical semiconductor device according to claim 4, wherein Si and Cl atoms are added to the semiconductor layer and the acceptor level in the semiconductor layer is defined by the association of the Si and Cl atoms by which the lattice points of Se are displaced.
Claim 8
Dependent Claim
49 words
The optical semiconductor device according to claim 4, wherein the Cl atom is added to the semiconductor layer and the acceptor level in the semiconductor layer is defined by the association of the Cl atom by which the lattice point of Se is displaced and the vacancy of Zn.
Claim 9
Dependent Claim
131 words
An optical semiconductor device provided with a p-type group II-VI compound semiconductor layer wherein dopants selected from group III and oxygen atoms, group VII and oxygen atoms, atoms of the groups III and IV and oxygen atoms, and atoms of the groups IV and VII and oxygen atom are added and associations are formed so that a shallow acceptor level can be defined, each of the associations is selected from the group IV atom, group III and oxygen atom, the group IV atom, group VII atom and oxygen atom, the group III atom, oxygen atom and a vacancy of a group II atom, and the group VII atom, oxygen atom and a vacancy of a group II atom, and is formed between those lattice points which are adjacent to each other.
Claim 10
Dependent Claim
131 words
An optical semiconductor device provided with a p-type group II-VI compound semiconductor layer wherein dopants selected from group III and oxygen atoms, group VII and oxygen atoms, atoms of the groups III and IV and oxygen atoms, and atoms of the groups IV and VII and oxygen atom are added and associations are formed so that a shallow acceptor level can be defined, each of the associations is selected from the group IV atom, group III and oxygen atom, the group IV atom, group VII atom and oxygen atom, the group III atom, oxygen atom and a vacancy of a group II atom, and the group VII atom, oxygen atom and a vacancy of a group II atom, and is formed between those lattice points which are adjacent to each other.
Claim 11
Dependent Claim
25 words
The optical semiconductor device according to claim 8, wherein the density of each of the doped atoms is larger than 1×10 17 cm -3 .
Claim 12
Dependent Claim
62 words
The optical semiconductor device according to claim 8, wherein the dopants are selected from atoms of the groups III and IV and oxygen atom and atoms of the groups IV and VII and oxygen atom, and the density of the group IV atom in the semiconductor layer is substantially equal to or larger than that of the group III or VII atom.
Claim 13
Dependent Claim
21 words
The optical semiconductor device according to claim 8, wherein the semiconductor layer consists of ZnSe or a mixed crystal of ZnSe.
Claim 14
Dependent Claim
71 words
The optical semiconductor device according to claim 11, wherein B, C and O atoms are added to the semiconductor layer and the acceptor level in the semiconductor layer is defined by the association of the B atom by which the lattice point of Zn is displaced, the C atom by which the lattice point of Se is displaced and the O atom by which the lattice point of Se is displaced.
Claim 15
Dependent Claim
49 words
The optical semiconductor device according to claim 11, wherein Si, Cl and O atoms are added to the semiconductor layer and the acceptor level in the semi-conductor layer is defined by the association of the Si, Cl and O atoms by which the lattice points of Se are displaced.
Claim 16
Dependent Claim
62 words
The optical semiconductor device according to claim 11, wherein Ga and O atoms are added to the semi-conductor layer and the acceptor level in the semiconductor layer is defined by the association of the Ga atom by which the lattice point of Zn is displaced, the vacancy of Zn and the O atom by which the lattice point of Se is displaced.
Claim 17
Dependent Claim
62 words
The optical semiconductor device according to claim 11, wherein Cl and O atoms are added to the semi-conductor layer and the acceptor level in the semiconductor layer is defined by the association of the Cl atom by which the lattice point of Se is displaced, the vacancy of Zn and the O atom by which the lattice point of Se is displaced.
Claim 18
Dependent Claim
139 words
An optical semiconductor device provided with a p-type compound semiconductor layer of ZnSe or of a mixed crystal of ZnSe wherein dopants selected from group III and oxygen atoms, group VII and oxygen atoms, atoms of the groups III and IV and oxygen atoms, and atoms of the groups IV and VII and oxygen atom are added and associations are formed so that a shallow acceptor level can be defined, each of the associations is selected from the group IV atom, group III atom and oxygen atom, the group IV atom, group VII atom and oxygen atom, the group III atom, oxygen atom and a vacancy of a group II atom, and the group VII atom, oxygen atom and a vacancy of a group II atom, and is formed between those lattice points which are adjacent to each other.
Claim 19
Dependent Claim
139 words
An optical semiconductor device provided with a p-type compound semiconductor layer of ZnSe or of a mixed crystal of ZnSe wherein dopants selected from group III and oxygen atoms, group VII and oxygen atoms, atoms of the groups III and IV and oxygen atoms, and atoms of the groups IV and VII and oxygen atom are added and associations are formed so that a shallow acceptor level can be defined, each of the associations is selected from the group IV atom, group III atom and oxygen atom, the group IV atom, group VII atom and oxygen atom, the group III atom, oxygen atom and a vacancy of a group II atom, and the group VII atom, oxygen atom and a vacancy of a group II atom, and is formed between those lattice points which are adjacent to each other.
Claim 20
Dependent Claim
71 words
The optical semiconductor device according to claim 16, wherein B, C and O atoms are added to the semiconductor layer and the acceptor level in the semiconductor layer is defined by the association of the B atom by which the lattice point of Zn is displaced, the C atom by which the lattice point of Se is displaced and the O atom by which the lattice point of Se is displaced.
Claim 21
Dependent Claim
49 words
The optical semiconductor device according to claim 16, wherein Si, Cl and O atoms are added to the semiconductor layer and the acceptor level in the semiconductor layer is defined by the association of the Si, Cl and O atoms by which the lattice points of Se are displaced.
Claim 22
Dependent Claim
62 words
The optical semiconductor device according to claim 16, wherein Ga and O atoms are added to the semiconductor layer and the acceptor level in the semiconductor layer is defined by the association of the Ga atom by which the lattice point of Zn is displaced, the vacancy of Zn and the O atom by which the lattice point of Se is displaced.
Claim 23
Dependent Claim
62 words
The optical semiconductor device according to claim 16, wherein Cl and O atoms are added to the semiconductor layer and the acceptor level in the semiconductor layer is defined by the association of the Cl atom by which the lattice point of Se is displaced, the vacancy of Zn and the O atom by which the lattice point of Se is displaced.
References Cited (Backward Citations)
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1995-09-22 | 1996-03-23 | 1996-09-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-09-22 | 2000-03-23 | 2000-09-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-09-22 | 2004-03-23 | 2004-09-22 | $7700.00 | Window Closed / Lapsed |