Patent US5148034A successfully refreshed from Google Patents.
US5148034A
Expired / Lapsed
US
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Ion implantation method
Assignee: Tokyo Electron Ltd
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Filing: 1990-04-19
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Granted: 1992-09-15
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Expires: 2010-04-19
Abstract
Abstract A method of ion implantation of a semiconductor devices to neutralize electrostatic charge stored on a wafer. Neutralizing electrons are supplied to a passage through which a positive ion beam is passed while forming a barrier of negative electrostatic potential between an area in the passage to which the neutralizing electrons are supplied and the wafer. When the positive ion beam is not present in the passage, the potential of the barrier is set lower than the negative potential corresponding to energy held in the neutralizing electrons. When the beam is not passed through the passage, most of the neutralizing electrons cannot cross over the barrier, but when the beam is passed through the passage, most of the electrons can cross over the barrier, following it, to shower over the wafer.
Inventors
- 👤 Yukio Koike
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 05:28
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/02; H01J37/026; H01J37/30; H01J37/317; H01J37/3171; H01J2237/00; H01J2237/004; H01J2237/0041; H01J2237/0044
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
194 words
An ion implantation method, comprising: supplying neutralizing electrons to a passage through which a positive ion beam passes, while forming a first barrier of negative electrostatic potential in a region of the passage between where the neutralizing electrons are generated, and an object to be implanted, and setting the potential of the first negative electrostatic barrier lower than the negative potential corresponding to energy held in most of the neutralizing electrons, when said positive ion beam is not present in said passage; generating thermoelectrons in a recessed region of an ion implantation apparatus, said recessed region being recessed from a drift region through which an ion beam of said apparatus passes, thereby blocking thermoelectrons generated in said recessed region from said object to be implanted; impacting the thermoelectrons onto a surface, thereby emitting secondary electrons; and whereby when the positive ion beam is not passed through the passage, most of the neutralizing electrons cannot cross the first barrier of negative of electrostatic potential and when the positive ion beam is passed through the passage, most of the neutralizing electrons can cross the first barrier, following the positive ion beam, to shower over the object.
Claim 2
Dependent Claim
194 words
An ion implantation method, comprising: supplying neutralizing electrons to a passage through which a positive ion beam passes, while forming a first barrier of negative electrostatic potential in a region of the passage between where the neutralizing electrons are generated, and an object to be implanted, and setting the potential of the first negative electrostatic barrier lower than the negative potential corresponding to energy held in most of the neutralizing electrons, when said positive ion beam is not present in said passage; generating thermoelectrons in a recessed region of an ion implantation apparatus, said recessed region being recessed from a drift region through which an ion beam of said apparatus passes, thereby blocking thermoelectrons generated in said recessed region from said object to be implanted; impacting the thermoelectrons onto a surface, thereby emitting secondary electrons; and whereby when the positive ion beam is not passed through the passage, most of the neutralizing electrons cannot cross the first barrier of negative of electrostatic potential and when the positive ion beam is passed through the passage, most of the neutralizing electrons can cross the first barrier, following the positive ion beam, to shower over the object.
Claim 3
Dependent Claim
26 words
The method according to claim 1, whereby the first barrier of negative electrostatic potential is formed remote from an area where the neutralizing electrons are emitted.
Claim 4
Dependent Claim
31 words
The method according to claim 1, whereby the total charge transported onto the object is measured and potentials of electrostatic electrodes are controlled on the basis of the measured total charge.
Claim 5
Dependent Claim
39 words
The method according to claim 1, whereby a second barrier of negative electrostatic potential is formed between an ion generating source and the neutralizing electron supply section to prevent the neutralizing electrons from leaking outside the ion beam passage.
Claim 6
Dependent Claim
37 words
The method according to claim 4, whereby the potential of the second negative electrostatic barrier formed between the ions generating source and the neutralizing electrons supply section is lower than that of the first negative electrostatic barrier.
Claim 7
Dependent Claim
17 words
The method according to claim 1, wherein the positive ion beam is moved relative to the object.
Claim 8
Dependent Claim
21 words
The method according to claim 6, wherein the object is mounted on a disk and is rotated together with the disk.
Claim 9
Dependent Claim
22 words
The method according to claim 1, wherein the positive ion beam is moved relative to the barrier of the negative electrostatic potential.
Claim 10
Dependent Claim
43 words
The method according to claim 8, which further comprises providing a beam passage and a filament for generating said thermal electrons, the positive ion beam being scanned along a scanning direction within said beam passage, the filament arranged parallel to the scanning direction.
Claim 11
Dependent Claim
65 words
The method according to claim 1, wherein said step of supplying neutralizing electrons further comprises: accelerating said thermal electrons into a large area beam; and impacting the large area beam of electrons onto a surface, thereby emitting secondary electrons into a large area of said drift region, wherein said secondary electrons have a number distribution versus kinetic energy which is maximal below 50 electron volts.
Claim 12
Dependent Claim
62 words
An ion implantation method according to claim 1, wherein the step of forming a first barrier of negative electrostatic potential further comprises: locating a selected electrode in a region of the passage between where the neutralizing electrons are generated and said object to be implanted, charging said selected electrode to a negative potential, thereby producing said first barrier of negative electrostatic potential.
Claim 13
Dependent Claim
183 words
An ion implantation method, comprising: supplying neutralizing electrons to a passage through which a positive ion beam passes, while forming a first barrier of negative electrostatic potential in a region of the passage between where the neutralizing electrons are generated, and an object to be implanted; setting the potential of the first negative electrostatic barrier lower than the negative potential corresponding to energy held in most of the neutralizing electrons, when said positive ion beam is not present in said passage; generating thermal electrons in an ion implantation apparatus, impacting the thermal electrons onto a surface, thereby emitting secondary electrons into an area of said drift region, wherein said secondary electrons have a number distribution versus kinetic energy which is maximal below 50 electron volts; and whereby when the positive ion beam is not passed through the passage, most of the neutralizing electrons cannot cross the first barrier of negative electrostatic potential and when the positive ion beam is passed through the passage, most of the neutralizing electrons can cross the first barrier, following the positive ion beam, to show over the object.
Claim 14
Dependent Claim
183 words
An ion implantation method, comprising: supplying neutralizing electrons to a passage through which a positive ion beam passes, while forming a first barrier of negative electrostatic potential in a region of the passage between where the neutralizing electrons are generated, and an object to be implanted; setting the potential of the first negative electrostatic barrier lower than the negative potential corresponding to energy held in most of the neutralizing electrons, when said positive ion beam is not present in said passage; generating thermal electrons in an ion implantation apparatus, impacting the thermal electrons onto a surface, thereby emitting secondary electrons into an area of said drift region, wherein said secondary electrons have a number distribution versus kinetic energy which is maximal below 50 electron volts; and whereby when the positive ion beam is not passed through the passage, most of the neutralizing electrons cannot cross the first barrier of negative electrostatic potential and when the positive ion beam is passed through the passage, most of the neutralizing electrons can cross the first barrier, following the positive ion beam, to show over the object.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-09-15 | 1996-03-16 | 1996-09-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-09-15 | 2000-03-16 | 2000-09-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-09-15 | 2004-03-16 | 2004-09-15 | $7700.00 | Window Closed / Lapsed |