US5147827A
Expired / Lapsed
US
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Method for producing a passivation film of InP compound semiconductor
Assignee: Panasonic Holdings Corp
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Filing: 1991-06-06
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Granted: 1992-09-15
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Expires: 2011-06-06
Abstract
Abstract A device such as a phototransistor, a photodiode, a laser diode or the like including a compound semiconductor coated with a stable passivation film to reduce leakage current is disclosed. The passivation film includes oxygen, a metallic element and constituent elements of the device, and the concentration of the elements included in the passivation film changes gradually through the interface between the passivation film and the device. Such a passivation film is formed by the oxidation or anodic oxidation of a device soaked in an aqueous solution of hydrogen oxide containing metallic ions such as Fe 2+ , Fe 3+ , Cu + , Cu 2+ , Co 2+ or Cr 2+ under the control of the temperature of the solution.
Inventors
- 👤 Toyoji Chino
- 👤 Kenichi Matsuda
- 👤 Shibata Jun
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 08:45
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6312; H10P14/6324; H10P14/6326; H10P14/6342; Y; Y10; Y10S; Y10S148/00; Y10S148/016
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
121 words
A method for producing a passivation film on the surface of a semiconductor device including an InP compound semiconductor, comprising the steps of: a. providing a solution of hydrogen peroxide containing metallic ions of iron, copper, chromium or cobalt, the concentration of the metallic ions in the solution being between 250 and 2000 ppm, the temperature of the solution being controlled between 50° and 115° C.; and b. soaking a semiconductor device including said InP compound semiconductor in the solution; whereby a passivation film is formed in the solution on the surface of the semiconductor device, and the passivation film includes an oxide of the InP compound in the semiconductor device, and an oxide and a hydroxide of the metallic ions.
Claim 2
Independent Claim
121 words
A method for producing a passivation film on the surface of a semiconductor device including an InP compound semiconductor, comprising the steps of: a. providing a solution of hydrogen peroxide containing metallic ions of iron, copper, chromium or cobalt, the concentration of the metallic ions in the solution being between 250 and 2000 ppm, the temperature of the solution being controlled between 50° and 115° C.; and b. soaking a semiconductor device including said InP compound semiconductor in the solution; whereby a passivation film is formed in the solution on the surface of the semiconductor device, and the passivation film includes an oxide of the InP compound in the semiconductor device, and an oxide and a hydroxide of the metallic ions.
Claim 3
Independent Claim
128 words
A method for producing a passivation film on the surface of a semiconductor device including an InP compound semiconductor, comprising the steps of: a. providing a solution of hydrogen peroxide containing metallic ions of iron, copper, chromium or cobalt, the concentration of the metallic ions in the solution being between 250 and 2000 ppm; and b. conducting anodic oxidation of a semiconductor device including said InP compound semiconductor in the solution, the anodic oxidation being performed at a current density between 1 and 3 mA/cm 2 ; whereby a passivation film is formed in the solution on the surface of the semiconductor device, and the passivation film includes an oxide of the InP compound in the semiconductor device, and an oxide and a hydroxide of the metallic ions.
Claim 4
Independent Claim
128 words
A method for producing a passivation film on the surface of a semiconductor device including an InP compound semiconductor, comprising the steps of: a. providing a solution of hydrogen peroxide containing metallic ions of iron, copper, chromium or cobalt, the concentration of the metallic ions in the solution being between 250 and 2000 ppm; and b. conducting anodic oxidation of a semiconductor device including said InP compound semiconductor in the solution, the anodic oxidation being performed at a current density between 1 and 3 mA/cm 2 ; whereby a passivation film is formed in the solution on the surface of the semiconductor device, and the passivation film includes an oxide of the InP compound in the semiconductor device, and an oxide and a hydroxide of the metallic ions.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1995-09-15 | 1996-03-16 | 1996-09-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-09-15 | 2000-03-16 | 2000-09-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-09-15 | 2004-03-16 | 2004-09-15 | $7700.00 | Window Closed / Lapsed |