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US5147809A
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Method of producing a bipolar transistor with a laterally graded emitter (LGE) employing a refill method of polycrystalline silicon
Assignee: Samsung Electronics Co Ltd
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Filing: 1991-08-20
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Granted: 1992-09-15
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Expires: 2011-08-20
Abstract
Abstract A method for manufacturing a bipolar transistor semiconductor device for preventing a degradation phenomenon of the transistor resulting from a reduction of a lateral electric field intensity. This is achieved by grading an emitter junction by way of refilling an emitter window with polycrystalline silicon. The resulting transistor structure overcomes the etch stop barrier by removing layer of oxide disposed below a layer of nitride along the region where formation of removing sidewalls of polycrystalline silicon have been formed. Subsequently, a doping distribution of the laterally graded emitter junction can easily be obtained by refilling the emitter window with the removed oxide layer with polycrystalline silicon. Because the shallowness of the oxide layer can be selectively and easily controlled, a thickness of the sidewalls is chosen which most efficiently raises the lateral electric field intensity of the transistor junction.
Inventors
- 👤 Tae-Young Won
- 👤 Seog-Heon Han
- 👤 Moon-Ho Kim
- 👤 Jang-Man Ko
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 15:21
CPC Classifications
H; H10; H10D; H10D10/00; H10D10/01; H10D10/051; H10D62/00; H10D62/10; H10D62/13; H10D62/133; H10P; H10P32/00; H10P32/10; H10P32/14; H10P32/1408; H10P32/1414; H10P32/17; H10P32/171; Y; Y10; Y10S; Y10S148/00; Y10S148/01; Y10S148/124; Y10S438/00; Y10S438/965
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
220 words
A method for manufacturing a bipolar transistor semiconductor device having a laterally graded emitter, the method comprising the steps of: forming an epitaxial layer disposed on a first conductivity type semiconductor substrate, said epitaxial layer being of a second conductivity type; forming a base region of the second conductivity type in said epitaxial layer; growing a first oxide layer on said epitaxial layer; growing a second oxide layer on said first oxide layer; forming a nitride layer over said second oxide layer; etching a predetermined region of said nitride layer to form an emitter window; depositing polycrystalline silicon of a low concentration polycrystalline silicon within the emitter window to form sidewalls of low concentration polycrystalline silicon therein by using a photolithography mask pattern, etching the portion of said first and second oxide layers disposed below the surface of said emitter window, including portions below said sidewalls, to form a deeper emitter window; filling said deeper emitter window, defined by the window area around the periphery of said sidewalls, with a polycrystalline silicon material; ion implanting a high impurity concentration into said filled deeper emitter window, and forming an emitter electrode region having high concentration polycrystalline silicon using a photolithography process; and diffusing, using a thermal annealing process, an emitter diffusion region into the base region formed in said epitaxial layer.
Claim 2
Independent Claim
220 words
A method for manufacturing a bipolar transistor semiconductor device having a laterally graded emitter, the method comprising the steps of: forming an epitaxial layer disposed on a first conductivity type semiconductor substrate, said epitaxial layer being of a second conductivity type; forming a base region of the second conductivity type in said epitaxial layer; growing a first oxide layer on said epitaxial layer; growing a second oxide layer on said first oxide layer; forming a nitride layer over said second oxide layer; etching a predetermined region of said nitride layer to form an emitter window; depositing polycrystalline silicon of a low concentration polycrystalline silicon within the emitter window to form sidewalls of low concentration polycrystalline silicon therein by using a photolithography mask pattern, etching the portion of said first and second oxide layers disposed below the surface of said emitter window, including portions below said sidewalls, to form a deeper emitter window; filling said deeper emitter window, defined by the window area around the periphery of said sidewalls, with a polycrystalline silicon material; ion implanting a high impurity concentration into said filled deeper emitter window, and forming an emitter electrode region having high concentration polycrystalline silicon using a photolithography process; and diffusing, using a thermal annealing process, an emitter diffusion region into the base region formed in said epitaxial layer.
Claim 3
Dependent Claim
13 words
The method of claim 1, wherein said first conductivity type is p type.
Claim 4
Dependent Claim
13 words
The method of claim 1, wherein said second conductivity type is n type.
Claim 5
Dependent Claim
32 words
The method of claim 1, wherein in said diffusing step said sidewalls of low concentration polycrystalline silicon and said filled emitter window of high concentration polycrystalline silicon serve as the diffusion source.
Claim 6
Dependent Claim
54 words
The method of claim 1, wherein said emitter diffusion region includes first portions of low impurity concentration disposed below said sidewalls of low concentration polycrystalline silicon and a second portion of high impurity concentration disposed below said deeper emitter window but not including the regions defined by said first portions of low impurity concentration.
Claim 7
Dependent Claim
27 words
The method of claim 1, wherein said sidewalls are doped by the high concentration polycrystalline silicon resulting in said sidewalls having a higher concentration polycrystalline silicon material.
References Cited (Backward Citations)
US4584055A
Cited
US4975381A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-09-15 | 1996-03-16 | 1996-09-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-09-15 | 2000-03-16 | 2000-09-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-09-15 | 2004-03-16 | 2004-09-15 | $7700.00 | Window Closed / Lapsed |