Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
223 words
A gate array semiconductor single chip integrated circuit, comprising: a memory cell array having a plurality of word lines and a plurality of bit lines in matrix form; an x-address decoder for the word lines of said memory cell array and functioning as x-select means; a data register coupled to said memory cell array; a gate array unit having basic cells and being coupled to said data register; application specific mask pattern layer means for wiring said basic cells in a specific application manner, including forming a part of y select means for providing selective signals; sense amplifier means coupled between said memory cell array and said data register for detecting and amplifying particular signal levels on said bit lines of said memory cell array and passing amplified signals to said data register; coupling means between said data register and said gate array unit, and said coupling means having a group of data signal lines corresponding to said bit lines; switch circuit means coupled between basic cells of said gate array unit and said data register and responsive to the selective signals for selecting particular ones of said signal data lines to be used in the transfer of data between said data register and said gate array; and said switch circuit means and said gate array unit functioning as a y select circuit.
Claim 2
Dependent Claim
223 words
A gate array semiconductor single chip integrated circuit, comprising: a memory cell array having a plurality of word lines and a plurality of bit lines in matrix form; an x-address decoder for the word lines of said memory cell array and functioning as x-select means; a data register coupled to said memory cell array; a gate array unit having basic cells and being coupled to said data register; application specific mask pattern layer means for wiring said basic cells in a specific application manner, including forming a part of y select means for providing selective signals; sense amplifier means coupled between said memory cell array and said data register for detecting and amplifying particular signal levels on said bit lines of said memory cell array and passing amplified signals to said data register; coupling means between said data register and said gate array unit, and said coupling means having a group of data signal lines corresponding to said bit lines; switch circuit means coupled between basic cells of said gate array unit and said data register and responsive to the selective signals for selecting particular ones of said signal data lines to be used in the transfer of data between said data register and said gate array; and said switch circuit means and said gate array unit functioning as a y select circuit.
Claim 3
Dependent Claim
27 words
An integrated circuit according to claim 1, wherein said gate array unit basic cells each have a pair of p-channel MOSFETs and a pair of n-channel MOSFETs.
Claim 4
Dependent Claim
26 words
An integrated circuit according to claim 1, including a timing controller and a group of control lines coupling the timing controller and the gate array unit.
Claim 5
Dependent Claim
43 words
An integrated circuit according to claim 3, including a memory unit comprising said memory cell array, said sense amplifier means, said data register, said timing controller and x-address decoder and a word line driver between said x-address decoder and said memory cell array.
Claim 6
Dependent Claim
35 words
An integrated circuit according to claim 1, further including means, having said data register, for selectively storing data less than and equal to the bit length of a word line of said memory cell array.
Claim 7
Dependent Claim
29 words
An integrated circuit according to claim 1, wherein said memory cell array comprises a plurality of dynamic memory cells each having a FET and a capacitor connected in series.
Claim 8
Dependent Claim
41 words
An integrated circuit according to claim 1, wherein said gate array unit includes a shift register, coupled to said data register, so that said switch circuit means provides a random access port for operating said integrated circuit as a video RAM.
Claim 9
Dependent Claim
27 words
An integrated circuit according to claim 7, wherein said gate array unit basic cells each have a pair of p-channel MOSFETS and a pair of n-channel MOSFETS.
Claim 10
Dependent Claim
42 words
An integrated circuit according to claim 8, including a memory unit comprising said memory cell array, said amplifier means, said data register, a timing controller, said x-address decoder and a word line driver between said x-address decoder and said memory cell array.
Claim 11
Dependent Claim
19 words
An integrated circuit according to claim 1, wherein said switch circuit means is formed in said gate array unit.
Claim 12
Independent Claim
170 words
A method for producing a gate array semiconductor single chip integrated circuit, comprising the following steps performed on a single semiconductor chip: forming a standardized memory cell array having a plurality of memory cells, bit lines and word lines in the form of a matrix; forming an x-address decoder for the word lines of said memory cell array to function as x-select means; forming a gate array unit having a group of unconnected basic cells; forming a data register for the exchange of data between the gate array unit and the memory cell array; forming data signal lines between the data register and the gate array unit; and wiring the basic cells of the gate array unit by using an application specific individual mask pattern providing only the wiring, thereby forming at least a part of y select means, and forming a switch circuit in the gate array unit for selecting particular ones of the data signal lines for data transfer as a further part of the y select means.
Claim 13
Independent Claim
170 words
A method for producing a gate array semiconductor single chip integrated circuit, comprising the following steps performed on a single semiconductor chip: forming a standardized memory cell array having a plurality of memory cells, bit lines and word lines in the form of a matrix; forming an x-address decoder for the word lines of said memory cell array to function as x-select means; forming a gate array unit having a group of unconnected basic cells; forming a data register for the exchange of data between the gate array unit and the memory cell array; forming data signal lines between the data register and the gate array unit; and wiring the basic cells of the gate array unit by using an application specific individual mask pattern providing only the wiring, thereby forming at least a part of y select means, and forming a switch circuit in the gate array unit for selecting particular ones of the data signal lines for data transfer as a further part of the y select means.
Claim 14
Dependent Claim
18 words
A method according to claim 11, including forming a plurality of input-output buffer cells on the semiconductor chip.
Claim 15
Dependent Claim
30 words
A method according to claim 12, wherein said steps of wiring includes wiring the input-output buffer cells with an application specific individual mask pattern to achieve desired input-output buffers cells.
Claim 16
Dependent Claim
62 words
A method according to claim 13, including repeating all of said steps with respect to a second chip to form two integrated circuit that are all identical except for the wiring, wherein said step of wiring employs at least two different mask patterns to form two individual semiconductor gate array integrated circuit devices having different functions respectively for said two integrated circuits.
Claim 17
Dependent Claim
62 words
A method according to claim 12, including repeating all of said steps with respect to a second chip to form two integrated circuits that are all identical except for the wiring, wherein said step of wiring employs at least two different mask patterns to form two individual semiconductor gate array integrated circuit devices having different functions respectively for said two integrated circuits.
Claim 18
Dependent Claim
32 words
A method according to claim 11, including coupling a sense amplifier between the memory cell array and the data register for detecting and amplifying particular signal levels of the memory cell array.
Claim 19
Dependent Claim
62 words
A method according to claim 16, including repeating all of said steps with respect to a second chip to form two integrated circuits that are all identical except for the wiring, wherein said step of wiring employs at least two different mask patterns to form two individual semiconductor gate array integrated circuit devices having different functions respectively for said two integrated circuits.
Claim 20
Dependent Claim
62 words
A method according to claim 11, including repeating all of said steps with respect to a second chip to form two integrated circuits that are all identical except for the wiring, wherein said step of wiring employs at least two different mask patterns to form two individual semiconductor gate array integrated circuit devices having different functions respectively for said two integrated circuits.