Patent US5140400A successfully refreshed from Google Patents.
US5140400A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device and photoelectric converting apparatus using the same
Assignee: Canon Inc
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Filing: 1990-03-27
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Granted: 1992-08-18
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Expires: 2010-03-27
Abstract
Abstract This invention relates to a semiconductor device having a collector region of first conductivity type, a base region of second conductivity type, and an emitter region of first conductivity. The base region is divided into a first base area and a second base which surrounds the first base area forming a hereto-junction. The band gap of said second base area is greater than that of the first base area thereby preventing undesired diffusion current.
Inventors
- 👤 Masakazu Morishita
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 13:39
CPC Classifications
H; H10; H10D; H10D10/00; H10D10/80; H10D10/821; H10D10/891; H10F; H10F30/00; H10F30/20; H10F30/21; H10F30/24; H10F30/245; H10F39/00; H10F39/10; H10F39/12; H10F39/197
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
96 words
A semiconductor device comprising a collector region of a first conductivity type, a base region of a second conductivity type, opposite to the first conductivity type, and an emitter region of the first conductivity, wherein said base region has a first base area and a second base area provided surrounding said first base area, wherein a band gap width of said second base area is greater than that of said first base area, and wherein said first base area and said second base area are arranged adjacent respectively to said emitter region and said collector region.
Claim 2
Dependent Claim
96 words
A semiconductor device comprising a collector region of a first conductivity type, a base region of a second conductivity type, opposite to the first conductivity type, and an emitter region of the first conductivity, wherein said base region has a first base area and a second base area provided surrounding said first base area, wherein a band gap width of said second base area is greater than that of said first base area, and wherein said first base area and said second base area are arranged adjacent respectively to said emitter region and said collector region.
Claim 3
Dependent Claim
26 words
A device according to claim 1, wherein said emitter region has a band gap of substantially the same width as that of said second base area.
Claim 4
Dependent Claim
30 words
A device according to claim 1, further comprising a semiconductor region of the first conductivity type having substantially the same band gap width as that of said first base area.
Claim 5
Dependent Claim
21 words
A device according to claim 3, wherein said semiconductor region has a thickness no more than the minority carrier diffusion length.
Claim 6
Dependent Claim
18 words
A semiconductor device according to claim 1, wherein said second base region is connected to said collector region.
Claim 7
Dependent Claim
27 words
A device according to claim 1, wherein said emitter region has the same or substantially the same band gap width as that of said second base area.
Claim 8
Dependent Claim
22 words
A device according to claim 1, wherein said semiconductor region has a thickness of no more than the minority carrier diffusion length.
Claim 9
Dependent Claim
13 words
A device according to claim 1, wherein said first conductivity type is n-type.
Claim 10
Dependent Claim
13 words
A device according to claim 1, wherein said second conductivity type is p-type.
Claim 11
Dependent Claim
15 words
A device according to claim 1, wherein said first base area includes Si and Ge.
Claim 12
Dependent Claim
13 words
A device according to claim 1, wherein said collector region includes Si atoms.
Claim 13
Dependent Claim
14 words
A device according to claim 11, wherein said collector region is a single crystal.
Claim 14
Dependent Claim
106 words
A semiconductor device comprising: a collector region of a first conductivity type; a base region of a second conductivity type, opposite to the first conductivity type; an emitter region of the first conductivity, wherein said base region has a first base area and a second base area provided around said first base area, and wherein a band gap width of said second base area is greater than that of said first base area; and a semiconductor region having the same conductivity type as and the same band gap width as that of said second base area provided between said emitter region and said first base area.
Claim 15
Dependent Claim
106 words
A semiconductor device comprising: a collector region of a first conductivity type; a base region of a second conductivity type, opposite to the first conductivity type; an emitter region of the first conductivity, wherein said base region has a first base area and a second base area provided around said first base area, and wherein a band gap width of said second base area is greater than that of said first base area; and a semiconductor region having the same conductivity type as and the same band gap width as that of said second base area provided between said emitter region and said first base area.
Claim 16
Dependent Claim
27 words
A device according to claim 13, wherein said emitter region has the same or substantially the same band gap width as that of said second base area.
Claim 17
Dependent Claim
21 words
A device according to claim 13, wherein said semiconductor region has a thickness no more than the minority carrier diffusion length.
Claim 18
Dependent Claim
28 words
A device according to claim 13, wherein said first base area and said second base area are arranged adjacent respectively to said emitter region and said collector region.
Claim 19
Dependent Claim
101 words
A photoelectric conversion apparatus comprising: a semiconductor device comprising a collector region of a first conductivity type, a base region of a second conductivity type, opposite to the first conductivity type and an emitter region of the first conductivity, wherein said base region ash a first base area and a second base area provided surrounding said first base area, wherein a band gap width of said second base area is greater than that of said first base area, and wherein said first base area and said second base area are arranged adjacent respectively to said emitter region and said collective region.
Claim 20
Dependent Claim
101 words
A photoelectric conversion apparatus comprising: a semiconductor device comprising a collector region of a first conductivity type, a base region of a second conductivity type, opposite to the first conductivity type and an emitter region of the first conductivity, wherein said base region ash a first base area and a second base area provided surrounding said first base area, wherein a band gap width of said second base area is greater than that of said first base area, and wherein said first base area and said second base area are arranged adjacent respectively to said emitter region and said collective region.
Claim 21
Dependent Claim
74 words
A semiconductor device comprising a collector region of a first conductivity type, a base region of a second conductivity type laminated on said collector region, and an emitter region of the first conductivity type formed on said base region, wherein at least a portion of said base region under said emitter region has a band gap smaller than that of said emitter and collector regions, and said base region has a horizontal potential barrier.
Claim 22
Dependent Claim
74 words
A semiconductor device comprising a collector region of a first conductivity type, a base region of a second conductivity type laminated on said collector region, and an emitter region of the first conductivity type formed on said base region, wherein at least a portion of said base region under said emitter region has a band gap smaller than that of said emitter and collector regions, and said base region has a horizontal potential barrier.
Claim 23
Dependent Claim
17 words
A semiconductor device according to claim 18, wherein said base region is connected to said collector region.
Claim 24
Dependent Claim
79 words
A photoelectric conversion apparatus comprising: a semiconductor device comprising a collector region of a first conductivity type, a base region of a second conductivity type laminated on said collector region, and an emitter region of the first conductivity type disposed on said base region, wherein at least a portion of said base region under said emitter region has a band gap smaller than that of said emitter and collector regions, and wherein said base region has horizontal potential barrier.
Claim 25
Dependent Claim
79 words
A photoelectric conversion apparatus comprising: a semiconductor device comprising a collector region of a first conductivity type, a base region of a second conductivity type laminated on said collector region, and an emitter region of the first conductivity type disposed on said base region, wherein at least a portion of said base region under said emitter region has a band gap smaller than that of said emitter and collector regions, and wherein said base region has horizontal potential barrier.
References Cited (Backward Citations)
DE1166938B
Cited
US3242018A
Cited
US4160258A
Cited
US4620210A
Cited
EP0177246A1
Cited
JPS6258678A
Cited
US4785457A
Cited
US4829343A
Cited
US4899200A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-08-18 | 1996-02-17 | 1996-08-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-08-18 | 2000-02-17 | 2000-08-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-08-18 | 2004-02-17 | 2004-08-18 | $7700.00 | Window Closed / Lapsed |