Patent US5136604A successfully refreshed from Google Patents.
US5136604A
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US
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Apparatus and method for detecting the power level in single and multi-stripe integrated lasers
Assignee: Xerox Corp
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Filing: 1990-03-28
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Granted: 1992-08-04
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Expires: 2010-03-28
Abstract
Abstract The present invention is an apparatus and method for providing detection of a laser output on a semiconductor wafer. A laser cavity and a detection cavity are formed on a semiconductor wafer in parallel such that light emitted laterally from the laser cavity is detected by the detection cavity. The amount of light detected can then be transformed into data, which in turn can be used to control the output of the laser.
Inventors
- 👤 Thomas L. Paoli
- 👤 Neville Connell
- 👤 Doanld R. Scifres
- 👤 Robert L. Thornton
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 11:12
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/02; H01S5/026; H01S5/0262; H01S5/0264; H10; H10H; H10H29/00; H10H29/10; H01S5/06; H01S5/068; H01S5/0683; H01S5/40; H01S5/4025; H01S5/4031
Claims Analysis
Total Claims: 56
Claim 1
Independent Claim
168 words
An apparatus for providing a laser and detecting the output of the laser, comprising: a monolithic semiconductor substrate having a plurality of semiconductor heterostructure layers disposed over a substrate; at least one first active region formed in a first named layer or layers on said semiconductor substrate, said at least one first active region being capable of light amplification and propagation under lasing conditions, biased to provide a laser wherein light propagates along a first path, said first path including a main segment having first and second substantially parallel opposite sides and a perturbation segment, where the distance between the sides of said perturbation segment is different from the distance between the sides of said main segment; and at least one second active region formed in said first layer on said semiconductor substrate substantially close to said at least one first active region, said at least one second active region being biased to detect an amount of light emanating laterally from said at least one first active region.
Claim 2
Independent Claim
168 words
An apparatus for providing a laser and detecting the output of the laser, comprising: a monolithic semiconductor substrate having a plurality of semiconductor heterostructure layers disposed over a substrate; at least one first active region formed in a first named layer or layers on said semiconductor substrate, said at least one first active region being capable of light amplification and propagation under lasing conditions, biased to provide a laser wherein light propagates along a first path, said first path including a main segment having first and second substantially parallel opposite sides and a perturbation segment, where the distance between the sides of said perturbation segment is different from the distance between the sides of said main segment; and at least one second active region formed in said first layer on said semiconductor substrate substantially close to said at least one first active region, said at least one second active region being biased to detect an amount of light emanating laterally from said at least one first active region.
Claim 3
Dependent Claim
19 words
The apparatus of claim 1 wherein said first active region emanates light from a front and a back facet.
Claim 4
Dependent Claim
61 words
The apparatus of claim 1 further comprising control means for receiving a detection signal from one of said at least one second active region representing said amount of light and in response to receiving said detection signal providing a power output signal to one of said at least one first active region representing a laser output level desired by a user.
Claim 5
Dependent Claim
26 words
The apparatus of claim 1 wherein said at least one first and second active regions are spaced at a distance of less than 2 micrometers inclusive.
Claim 6
Dependent Claim
26 words
The apparatus of claim 1 wherein said at least one first and second active regions are formed on said semiconductor substrate using a layer disordering technique.
Claim 7
Dependent Claim
28 words
The apparatus of claim 1 wherein said at least one first and second active regions are formed on said semiconductor substrate using an impurity induced layer disordering technique.
Claim 8
Dependent Claim
22 words
The apparatus of claim 1 wherein said at least one first and second active regions are formed simultaneously on said semiconductor substrate.
Claim 9
Dependent Claim
33 words
The apparatus of claim 1 wherein said perturbation segment is in the form of a geometric shape and said at least one second active region has a shape complementary to said perturbation segment.
Claim 10
Dependent Claim
19 words
The apparatus of claim 8 wherein said at least one second active region is aligned with said perturbation segment.
Claim 11
Dependent Claim
21 words
The apparatus of claim 1 wherein said at least one second active region overlaps said at least one first active region.
Claim 12
Dependent Claim
15 words
The apparatus of claim 10 wherein said at least one second active region is "H"-shaped.
Claim 13
Dependent Claim
26 words
The apparatus of claim 1 wherein there is a gap between said main segment and said perturbation segment in said at least one first active region.
Claim 14
Independent Claim
172 words
An apparatus for providing a laser and detecting the output power of the laser, comprising: a monolithic semiconductor substrate having a plurality of semiconductor heterostructure layers disposed over a substrate; at least one first active region formed in a first named layer or layers on said semiconductor substrate, said at least one first active region being capable of light amplification and propagation under lasing conditions, biased to provide a laser wherein light propagates along a first path, said first path including a main segment having first and second substantially parallel opposite sides, and a perturbation segment where the distance between the sides of said perturbation segment is different from the distance between the sides of said main segment; and at least one second active region formed in said first layer on said semiconductor substrate substantially close to said at least one first active region, said at least one second active region being biased to detect an amount of light scattered from said perturbation segment reaching said at least one second active region.
Claim 15
Independent Claim
172 words
An apparatus for providing a laser and detecting the output power of the laser, comprising: a monolithic semiconductor substrate having a plurality of semiconductor heterostructure layers disposed over a substrate; at least one first active region formed in a first named layer or layers on said semiconductor substrate, said at least one first active region being capable of light amplification and propagation under lasing conditions, biased to provide a laser wherein light propagates along a first path, said first path including a main segment having first and second substantially parallel opposite sides, and a perturbation segment where the distance between the sides of said perturbation segment is different from the distance between the sides of said main segment; and at least one second active region formed in said first layer on said semiconductor substrate substantially close to said at least one first active region, said at least one second active region being biased to detect an amount of light scattered from said perturbation segment reaching said at least one second active region.
Claim 16
Dependent Claim
19 words
The apparatus of claim 13 wherein said first active region emanates light from a front and a back facet.
Claim 17
Dependent Claim
38 words
The apparatus of claim 13 wherein said perturbation segment is formed such that light reaching said perturbation segment is scattered from said at least one first active region and passes into said at least one second active region.
Claim 18
Dependent Claim
61 words
The apparatus of claim 13 further comprising control means for receiving a detection signal from one of said at least one second active region representing said amount of light and in response to receiving said detection signal providing a power output signal to one of said at least one first active region representing a laser output level desired by a user.
Claim 19
Dependent Claim
26 words
The apparatus of claim 13 wherein said at least one first and second active regions are spaced at a distance of less than 2 micrometers inclusive.
Claim 20
Dependent Claim
26 words
The apparatus of claim 13 wherein said at least one first and second active regions are formed on said semiconductor substrate using a layer disordering technique.
Claim 21
Dependent Claim
28 words
The apparatus of claim 13 wherein said at least one first and second active regions are formed on said semiconductor substrate using an impurity induced layer disordering technique.
Claim 22
Dependent Claim
22 words
The apparatus of claim 13 wherein said at least one first and second active regions are formed simultaneously on said semiconductor substrate.
Claim 23
Dependent Claim
33 words
The apparatus of claim 13 wherein said perturbation segment is in the form of a geometric shape and said at least one second active region has a shape complementary to said perturbation segment.
Claim 24
Dependent Claim
21 words
The apparatus of claim 21 wherein said at least one second active region includes a protrusion aligned with said perturbation segment.
Claim 25
Dependent Claim
24 words
The apparatus of claim 21 wherein said at least one second active region includes an indentation, said indentation being aligned with said perturbation segment.
Claim 26
Dependent Claim
26 words
The apparatus of claim 13 wherein there is a gap between said main segment and said perturbation segment in said at least one first active region.
Claim 27
Dependent Claim
29 words
The apparatus of claim 13 wherein said first path includes a plurality of perturbation segments in said at least one first active region, said perturbation segments including a protrusion.
Claim 28
Dependent Claim
29 words
The apparatus of claim 13 wherein said first path includes a plurality of perturbation segments in said at least one first active region, said perturbation segments including an indentation.
Claim 29
Dependent Claim
18 words
The apparatus of claim 21 wherein said at least one second active region includes a plurality of protrusions.
Claim 30
Dependent Claim
18 words
The apparatus of claim 21 wherein said at least one second active region includes a plurality of indentations.
Claim 31
Dependent Claim
12 words
The apparatus of claim 13 wherein said perturbation segment includes a protrusion.
Claim 32
Dependent Claim
12 words
The apparatus of claim 20 wherein said perturbation segment includes an indentation.
Claim 33
Independent Claim
156 words
An apparatus for providing a laser and detecting the output power of the laser, comprising: a monolithic semiconductor substrate having a plurality of semiconductor heterostructure layers disposed over a substrate; at least one first active region formed in a first layer or layers on said semiconductor substrate, said first active region being capable of light amplification and propagation under lasing conditions, said first active region including a waveguide having an optical confinement, said first active region biased to provide a laser wherein light propagates along a first path, said first path including a first section comprising a waveguide having a weaker optical confinement than said at least one first active region; and at least one second active region formed on said semiconductor substrate substantially close to said at least one first active region, said at least one second active region being biased to detect an amount of light emanating from said waveguide having weaker optical confinement.
Claim 34
Independent Claim
156 words
An apparatus for providing a laser and detecting the output power of the laser, comprising: a monolithic semiconductor substrate having a plurality of semiconductor heterostructure layers disposed over a substrate; at least one first active region formed in a first layer or layers on said semiconductor substrate, said first active region being capable of light amplification and propagation under lasing conditions, said first active region including a waveguide having an optical confinement, said first active region biased to provide a laser wherein light propagates along a first path, said first path including a first section comprising a waveguide having a weaker optical confinement than said at least one first active region; and at least one second active region formed on said semiconductor substrate substantially close to said at least one first active region, said at least one second active region being biased to detect an amount of light emanating from said waveguide having weaker optical confinement.
Claim 35
Dependent Claim
19 words
The apparatus of claim 31 wherein said first active region emanates light from a front and a back facet.
Claim 36
Dependent Claim
61 words
The apparatus of claim 31 further comprising control means for receiving a detection signal from one of said at least one second active region representing said amount of light and in response to receiving said detection signal providing a power output signal to one of said at least one first active region representing a laser output level desired by a user.
Claim 37
Dependent Claim
26 words
The apparatus of claim 31 wherein said at least one first and second active regions are formed on said semiconductor substrate using a layer disordering technique.
Claim 38
Dependent Claim
28 words
The apparatus of claim 31 wherein said at least one first and second active regions are formed on said semiconductor substrate using an impurity induced layer disordering technique.
Claim 39
Dependent Claim
22 words
The apparatus of claim 31 wherein said at least one first and second active regions are formed simultaneously on said semiconductor substrate.
Claim 40
Dependent Claim
31 words
The apparatus of claim 31 wherein said section is in the form of a geometric shape and said at least one second active region has a shape complementary to said section.
Claim 41
Independent Claim
141 words
An apparatus for providing a laser and detecting the output power of the laser, comprising: a monolithic semiconductor substrate having a plurality of semiconductor heterostructure layers disposed over a substrate; at least one first active region formed in a first named layer or layers on said semiconductor substrate, said at least one first active region being capable of light amplification and propagation under lasing conditions, biased to provide a laser wherein light propagates along a first path, said first path including a perturbation comprising deflection means positioned to deflect at least a portion of light from said first path; and at least one second active region formed on said semiconductor substrate substantially close to said at least one first active region, said at least one second active region being biased to detect an amount of light deflected from said first path.
Claim 42
Independent Claim
141 words
An apparatus for providing a laser and detecting the output power of the laser, comprising: a monolithic semiconductor substrate having a plurality of semiconductor heterostructure layers disposed over a substrate; at least one first active region formed in a first named layer or layers on said semiconductor substrate, said at least one first active region being capable of light amplification and propagation under lasing conditions, biased to provide a laser wherein light propagates along a first path, said first path including a perturbation comprising deflection means positioned to deflect at least a portion of light from said first path; and at least one second active region formed on said semiconductor substrate substantially close to said at least one first active region, said at least one second active region being biased to detect an amount of light deflected from said first path.
Claim 43
Dependent Claim
19 words
The apparatus of claim 38 wherein said first active region emanates light from a front and a back facet.
Claim 44
Dependent Claim
59 words
The apparatus of claim 38 further comprising control means for receiving a detection signal from one of said at least one second active region representing said amount of light and in response to receiving said detection signal providing a power output signal to said at least one first active region representing a laser output level desired by a user.
Claim 45
Dependent Claim
39 words
The apparatus of claim 38 wherein said deflection means is a grating having a period such that constructive reflection of light is produced from said at least one first active region to said at least one second active region.
Claim 46
Dependent Claim
25 words
The apparatus of claim 38 wherein said at least one first and second active regions are formed on said semiconductor using a layer disordering technique.
Claim 47
Dependent Claim
28 words
The apparatus of claim 38 wherein said at least one first and second active regions are formed on said semiconductor substrate using an impurity induced layer disordering technique.
Claim 48
Dependent Claim
22 words
The apparatus of claim 38 wherein said at least one first and second active regions are formed simultaneously on said semiconductor substrate.
Claim 49
Dependent Claim
17 words
The apparatus of claim 38 wherein said at least one second active region includes a first perturbation.
Claim 50
Dependent Claim
15 words
The apparatus of claim 38 wherein said deflection means comprises at least one angled reflector.
Claim 51
Dependent Claim
35 words
The apparatus of claim 46 wherein said at least one angled reflector is formed on said semiconductor substrate by disordering layers of said semiconductor substrate outside said at least one first and second active regions.
Claim 52
Dependent Claim
38 words
The apparatus of claim 46 wherein said at least one angled reflector is formed on said semiconductor substrate by impurity induced disordering of layers of said semiconductor substrate outside said at least one first and second active regions.
Claim 53
Independent Claim
163 words
An apparatus for providing a laser and detecting the output power of the laser, comprising: a monolithic semiconductor substrate having a plurality of semiconductor heterostructure layers disposed over a substrate; at least one first active region formed in a first named layer or layers on said semiconductor substrate, said at least one first active region being capable of light amplification and propagation under lasing conditions, biased to provide a laser wherein light propagates along a first path, said first path including a main segment having first and second substantially parallel opposite sides and a perturbation segment, said perturbation segment having a first side which is not parallel to said first side of said main segment; and at least one second active region formed in said first layer on said semiconductor substrate substantially close to said at least one first active region, said second active region being biased to detect an amount of light emanating laterally from said at least one first active region.
Claim 54
Independent Claim
163 words
An apparatus for providing a laser and detecting the output power of the laser, comprising: a monolithic semiconductor substrate having a plurality of semiconductor heterostructure layers disposed over a substrate; at least one first active region formed in a first named layer or layers on said semiconductor substrate, said at least one first active region being capable of light amplification and propagation under lasing conditions, biased to provide a laser wherein light propagates along a first path, said first path including a main segment having first and second substantially parallel opposite sides and a perturbation segment, said perturbation segment having a first side which is not parallel to said first side of said main segment; and at least one second active region formed in said first layer on said semiconductor substrate substantially close to said at least one first active region, said second active region being biased to detect an amount of light emanating laterally from said at least one first active region.
Claim 55
Independent Claim
166 words
An apparatus for providing a laser and detecting the output power of the laser, comprising: a monolithic semiconductor substrate having a plurality of semiconductor heterostructure layers disposed over a substrate; at least one first active region formed in a first named layer or layers on said semiconductor substrate, said at least one first active region being capable of light amplification and propagation under lasing conditions, biased to provide a laser wherein light propagates along a first path, said first path including a main segment having first and second substantially parallel opposite sides, and a perturbation segment, said perturbation segment having a first side which is not parallel to said first side of said main segment; and at least one second active region formed in said first layer on said semiconductor substrate substantially close to said at least one first active region, said at least on second active region being biased to detect an amount of light emanating laterally from said at least one first active region.
Claim 56
Independent Claim
166 words
An apparatus for providing a laser and detecting the output power of the laser, comprising: a monolithic semiconductor substrate having a plurality of semiconductor heterostructure layers disposed over a substrate; at least one first active region formed in a first named layer or layers on said semiconductor substrate, said at least one first active region being capable of light amplification and propagation under lasing conditions, biased to provide a laser wherein light propagates along a first path, said first path including a main segment having first and second substantially parallel opposite sides, and a perturbation segment, said perturbation segment having a first side which is not parallel to said first side of said main segment; and at least one second active region formed in said first layer on said semiconductor substrate substantially close to said at least one first active region, said at least on second active region being biased to detect an amount of light emanating laterally from said at least one first active region.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1995-08-04 | 1996-02-03 | 1996-08-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-08-04 | 2000-02-03 | 2000-08-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-08-04 | 2004-02-03 | 2004-08-04 | $7700.00 | Window Closed / Lapsed |