Patent US5135629A successfully refreshed from Google Patents.
US5135629A
Expired / Lapsed
US
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Thin film deposition system
Assignee: Nippon Mining Holdings Inc
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Filing: 1990-06-08
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Granted: 1992-08-04
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Expires: 2010-06-08
Abstract
Abstract In a system for thin film deposition by vapor growth, the contamination of devices and the formation of particles in the deposited thin film inside the system are prevented by the provision therein of an anti-contamination means which is chosen from among (1) an electrolytic cop-per foil having a fine-grained thin layer of copper or/and copper oxide formed by copper plating on the matte surface of the copper foil, (2) an electrolytic copper foil having a fine-grained thin layer of copper or/and copper oxide formed by copper plating on the matte surface of the foil and coated with a material which is the same as or is harmless and similar to the material to be deposited as a thin film by vapor growth onto the substrate, (3) a corrugated metal foil, and (4) a metal foil formed with a plurality of irregularities by embossing.
Inventors
- 👤 Susumi Sawada
- 👤 Osamu Kanou
- 👤 Hironori Wada
- 👤 Junichi Anan
- 👤 Takakazu Seki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 19:14
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32431; H01J37/32458; H01J37/32477; H01J37/32504; C; C23; C23C; C23C14/00; C23C14/22; C23C14/56; C23C14/564; C23C16/00; C23C16/44; C23C16/4401; C23C16/4404; H01J37/32532; H01J37/32559
Claims Analysis
Total Claims: 44
Claim 1
Independent Claim
80 words
A system for thin film deposition by vapor phase growth characterized by having an anti-comtamination means fitted therein, said means consisting of a treated electrolytic copper foil having fine grains of copper or copper oxide or a mixture of copper and copper oxide precipitated by copper plating on the numerous protuberances of a matte surface of an electrolytic copper foil, whereby the contamination of devices and the formation of particles in the deposited thin film inside the system are prevented.
Claim 2
Independent Claim
80 words
A system for thin film deposition by vapor phase growth characterized by having an anti-comtamination means fitted therein, said means consisting of a treated electrolytic copper foil having fine grains of copper or copper oxide or a mixture of copper and copper oxide precipitated by copper plating on the numerous protuberances of a matte surface of an electrolytic copper foil, whereby the contamination of devices and the formation of particles in the deposited thin film inside the system are prevented.
Claim 3
Dependent Claim
29 words
A system according to claim 1 wherein said electrolytic copper foil has on the matte surface thereof a surface roughness, Rz, in the range of 5 to 10 μm.
Claim 4
Dependent Claim
36 words
A system according to claim 1 or 2 wherein the side of said foil having said fine grains therein is oriented as a side where particles scattered flying from the vapor phase growth procedure are trapped.
Claim 5
Dependent Claim
17 words
A system according to claim 1 or 2 wherein said foil is a disposable electrolytic copper foil.
Claim 6
Dependent Claim
15 words
A system according to claim 1 or 2 wherein said system is a sputtering system.
Claim 7
Independent Claim
113 words
A system for thin film deposition by vapor phase growth characterized by having an anti-contamination means fitted therein, said means consisting of a treated electrolytic copper foil having fine grains of copper or copper oxide or a mixture of copper and copper oxide precipitated by copper plating on the numerous protuberances of a matte surface of an electrolytic copper foil, said foil being coated with a material which is the same as or is harmless and similar to the material to be deposited as a thin film by vapor growth on a substrate, whereby the contamination of devices and the formation of particles in the deposited thin film inside the system are prevented.
Claim 8
Independent Claim
113 words
A system for thin film deposition by vapor phase growth characterized by having an anti-contamination means fitted therein, said means consisting of a treated electrolytic copper foil having fine grains of copper or copper oxide or a mixture of copper and copper oxide precipitated by copper plating on the numerous protuberances of a matte surface of an electrolytic copper foil, said foil being coated with a material which is the same as or is harmless and similar to the material to be deposited as a thin film by vapor growth on a substrate, whereby the contamination of devices and the formation of particles in the deposited thin film inside the system are prevented.
Claim 9
Dependent Claim
28 words
A system according to claim 6 wherein said electrolytic copper foil has on the matte surface thereof a surface roughness, Rz, in the range of 5 to 10μm.
Claim 10
Dependent Claim
36 words
A system according to claim 6 or 7 wherein the the side of said foil having said fine grained thereon is oriented as a side where particles scattered flying from the vapor growth procedure are trapped.
Claim 11
Dependent Claim
17 words
A system according to claim 6 or 7 wherein said foil is a disposable electrolytic copper foil.
Claim 12
Dependent Claim
15 words
A system according to claim 6 or 7 wherein said system is a sputtering system.
Claim 13
Independent Claim
53 words
A system for thin film deposition by vapor phase growth characterized by having an anti-contamination means fitted therein, said means consisting of a corrugated copper foil ranging from 18 to 300 μm thick, whereby the contamination of devices and the formation of particles in the deposited thin film inside the system are prevented.
Claim 14
Independent Claim
53 words
A system for thin film deposition by vapor phase growth characterized by having an anti-contamination means fitted therein, said means consisting of a corrugated copper foil ranging from 18 to 300 μm thick, whereby the contamination of devices and the formation of particles in the deposited thin film inside the system are prevented.
Claim 15
Dependent Claim
70 words
A system according to claim 11 wherein said copper foil has fine grains of copper or copper oxide or a mixture of copper and copper oxide precipitated by copper plating on a surface of the copper foil, with or without coating of a material which is the same as or is harmless and similar to the material to be deposited as a thin film by vapor growth onto a substrate.
Claim 16
Dependent Claim
26 words
A system according to claim 11 or 12 wherein said anti-contamination means is spot welded to devices inside said system so as to cover the same.
Claim 17
Dependent Claim
15 words
A system according to claim 11 or 12 wherein said system is a sputtering system.
Claim 18
Independent Claim
59 words
A system for thin film deposition by vapor phase growth characterized by having an anti-contamination means fitted therein, said means consisting of a copper foil ranging from 18 to 300 μm thick embossed to have a plurality of irregularities, whereby the contamination of devices and the formation of particles in the deposited thin film inside the system are prevented.
Claim 19
Independent Claim
59 words
A system for thin film deposition by vapor phase growth characterized by having an anti-contamination means fitted therein, said means consisting of a copper foil ranging from 18 to 300 μm thick embossed to have a plurality of irregularities, whereby the contamination of devices and the formation of particles in the deposited thin film inside the system are prevented.
Claim 20
Dependent Claim
71 words
A system according to claim 15 wherein said copper foil has fine grains of copper or copper oxide or a mixture of copper and copper oxide precipitated by copper plating on a surface of the copper foil, with or without coating of a material which is the same as or is harmless and similar to the material to be deposited as a thin film by vapor growth or to a substrate.
Claim 21
Dependent Claim
26 words
A system according to claim 15 or 16 wherein said anti-contamination means is spot welded to devices inside said system so as to cover the same.
Claim 22
Dependent Claim
15 words
A system according to claim 15 or 16 wherein said system is a sputtering system.
Claim 23
Independent Claim
83 words
A method for preventing the contamination of devices and the formation of particles in the deposited thin film inside a system for thin film deposition by vapor phase growth by disposing the anti-contamination means in the system characterized in the said anti-contamination means consists of a treated electrolytic copper foil having fine grains of copper or copper oxide or a mixture of copper and copper oxide precipitated by copper plating on the numerous protuberances of a matte surface of an electrolytic copper foil.
Claim 24
Independent Claim
83 words
A method for preventing the contamination of devices and the formation of particles in the deposited thin film inside a system for thin film deposition by vapor phase growth by disposing the anti-contamination means in the system characterized in the said anti-contamination means consists of a treated electrolytic copper foil having fine grains of copper or copper oxide or a mixture of copper and copper oxide precipitated by copper plating on the numerous protuberances of a matte surface of an electrolytic copper foil.
Claim 25
Dependent Claim
29 words
A method according to claim 19 wherein said electrolytic copper foil has on the matte surface thereof a surface roughness, Rz, in the range of 5 to 10 μm.
Claim 26
Dependent Claim
36 words
A method according to claim 19 or 20 wherein the side of said foil having said fine grains thereon is oriented as a side where particles scattered flying from the vapor phase growth procedure are trapped.
Claim 27
Dependent Claim
17 words
A method according to claim 19 or 20 wherein said foil is a disposable electrolytic copper foil.
Claim 28
Dependent Claim
14 words
A method according to claim 19, 20 wherein said system is a sputtering system.
Claim 29
Independent Claim
114 words
A method for preventing the contamination of devices and the formation of particles in the deposited thin film inside a system for thin film deposition by vapor phase growth by disposing anti-contamination means in the system characterized in that said anti-contamination means consists of a treated electrolytic copper foil having fine grains of copper or copper oxide or a mixture of copper and copper oxide precipitated by copper plating on the numerous protuberances of a matte surface of an electrolytic copper foil, said foil being coated with a material which is the same or is harmless and similar to the material to be deposited as a thin film by vapor growth onto a substrate.
Claim 30
Independent Claim
114 words
A method for preventing the contamination of devices and the formation of particles in the deposited thin film inside a system for thin film deposition by vapor phase growth by disposing anti-contamination means in the system characterized in that said anti-contamination means consists of a treated electrolytic copper foil having fine grains of copper or copper oxide or a mixture of copper and copper oxide precipitated by copper plating on the numerous protuberances of a matte surface of an electrolytic copper foil, said foil being coated with a material which is the same or is harmless and similar to the material to be deposited as a thin film by vapor growth onto a substrate.
Claim 31
Dependent Claim
29 words
A method according to claim 24 wherein said electrolytic copper foil has on the matte surface thereof a surface roughness, Rz, in the range of 5 to 10 μm.
Claim 32
Dependent Claim
35 words
A method according to claim 24 or 25 wherein the side of said foil having said fine grains thereon is oriented as a side where particles scattered flying from the vapor growth procedure are trapped.
Claim 33
Dependent Claim
16 words
A method according to claim 24 or 25 wherein said foil is disposable electrolytic copper foil.
Claim 34
Dependent Claim
15 words
A method according to claim 24 or 25, wherein said system is a sputtering system.
Claim 35
Independent Claim
56 words
A method for preventing the contamination of devices and the formation of particles in the deposited thin film inside a system for thin film deposition by vapor phase growth by disposing anti-contamination means in the system characterized in the said anti-contamination means is consisting of a corrugated copper foil ranging from 18 to 300 μm thick.
Claim 36
Independent Claim
56 words
A method for preventing the contamination of devices and the formation of particles in the deposited thin film inside a system for thin film deposition by vapor phase growth by disposing anti-contamination means in the system characterized in the said anti-contamination means is consisting of a corrugated copper foil ranging from 18 to 300 μm thick.
Claim 37
Dependent Claim
69 words
A method according to claim 29 wherein said copper foil has fine grains of copper or copper oxide or a mixture of copper and copper oxide precipitated by copper plating on a surface of the copper foil, with or without coating of a material which is the same or is harmless and similar to the material to be deposited as a thin film by vapor growth onto a substrate.
Claim 38
Dependent Claim
26 words
A method according to claim 29 or 30 wherein said anti-contamination means is spot welded to devices inside said system so as to cover the same.
Claim 39
Dependent Claim
15 words
A method according to claim 29 or 30 wherein said system is a sputtering system.
Claim 40
Independent Claim
62 words
A method for preventing the contamination of devices and the formation of particles in the deposited thin film inside a system for thin film deposition by vapor phase growth by disposing anti-contamination means in the system characterized in that said anti-contamination means is consisting of a copper foil ranging from 18 to 300 μm thick embossed to have a plurality of irregularities.
Claim 41
Independent Claim
62 words
A method for preventing the contamination of devices and the formation of particles in the deposited thin film inside a system for thin film deposition by vapor phase growth by disposing anti-contamination means in the system characterized in that said anti-contamination means is consisting of a copper foil ranging from 18 to 300 μm thick embossed to have a plurality of irregularities.
Claim 42
Dependent Claim
70 words
A method according to claim 33, wherein said copper foil has fine grains of copper or copper oxide or a mixture of copper and copper oxide precipitated by copper plating on a surface of the copper foil, with or without coating of a material which is the same as or is harmless and similar to the material to be deposited as a thin film by vapor growth onto a substrate.
Claim 43
Dependent Claim
26 words
A method according to claim 33 or 34 wherein said anti-contamination means is spot welded to devices inside said system so as to cover the same.
Claim 44
Dependent Claim
15 words
A method according to claim 33 or 34 wherein said system is a sputtering system.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-08-04 | 1996-02-03 | 1996-08-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-08-04 | 2000-02-03 | 2000-08-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-08-04 | 2004-02-03 | 2004-08-04 | $7700.00 | Window Closed / Lapsed |