Semiconductor memory device having a flash write function

Claim 2

A semiconductor memory device having a flash write function for writing the same data into memory on a selected row, comprising: a memory cell array having a plurality of memory cells arranged in a matrix of rows and columns, each row divided into groups of columns; row selecting means responsive to an externally applied row address for selecting a row of said memory cell array; means responsive to a signal indicating the flash write function for writing the same data simultaneously to the memory cells of the row selected by said row selecting means; and means responsive to a column group designating signal as a mask position designating signal for controlling said means for writing the same data such that writing of the same data is prohibited to only the memory cells designated by said column group designating signal.

Claim 3

A semiconductor memory device according to claim 1, wherein said means for controlling said means for writing the same data comprises means receiving an externally applied column address signal for generating said mask position designating signal.

Claim 4

A semiconductor memory device having a flash write function for writing the same data to memory cells on a selected row, comprising: a memory cell block, said memory cell block having a plurality of memory cells arranged in a matrix of rows and columns and being accessible at random; a data transmitting line for transmitting write data to said memory cell block; connecting means for simultaneously connecting each column of said memory cell block to said data transmitting line, said connecting means having groups of connector elements, each connector element corresponding to a column and each group of connector elements corresponding to a group of columns; and means responsive to an externally applied column group designating signal, a signal designating the flash write mode of operation and a write designating signal for selectively setting said groups of connector elements conductive or non-conductive, said column group designating signal designating a group of connector elements which is to be made non-conductive.

Claim 5

A semiconductor memory device having a flash write function for writing the same data to memory cells on a selected row, comprising: a memory cell block, said memory cell block having a plurality of memory cells arranged in a matrix of rows and columns and being accessible at random; a data transmitting line for transmitting write data to said memory cell block; connecting means for simultaneously connecting each column of said memory cell block to said data transmitting line, said connecting means having groups of connector elements, each connector element corresponding to a column and each group of connector elements corresponding to a group of columns; and means responsive to an externally applied column group designating signal, a signal designating the flash write mode of operation and a write designating signal for selectively setting said groups of connector elements conductive or non-conductive, said column group designating signal designating a group of connector elements which is to be made non-conductive.

Claim 6

A semiconductor memory device according to claim 3, wherein said means for selecting setting comprises means responsive to said write designating signal for setting all of said connector elements conductive when said flash write designating signal is inactive, while neglecting the received column group designating signal.

Claim 7

A semiconductor memory device according to claim 3, wherein said means for selectively setting comprises means responsive to an externally applied column address for generating said column group designating signal.

Claim 8

A multiport RAM having a random access port and a serial access port, and a flash write function for writing data simultaneously to memory cells of a selected row from said random access port, comprising: a plurality of memory cell blocks each having a plurality of memory cells arranged in a matrix of rows and columns; row selecting means responsive to an externally applied row address signal for selecting one row of memory cells from each of said memory cell blocks; column selecting means responsive to an externally applied column address signal for selecting at least one column of memory cells from each said memory cell blocks, said column selecting means adapted to set all columns in at least one block to selected state in response to a signal designating said flash writing; a plurality of write data transmitting lines providing corresponding to each of said plurality of memory cell blocks; means provided corresponding to each of said memory cell blocks for connecting the column selected by said column selecting means to a corresponding write data transmitting line, each said connecting means including connector elements provided corresponding to each column of an associated cell block and divided into groups by a plurality of columns; and means responsive to a flash write designating signal, a mask position designating signal and a write designating signal for controlling operation of said connecting means such that said connector elements are turned on or off group by group, said mask position designating signal designating memories to be masked by said group by group.

Claim 9

A multiport RAM having a random access port and a serial access port, and a flash write function for writing data simultaneously to memory cells of a selected row from said random access port, comprising: a plurality of memory cell blocks each having a plurality of memory cells arranged in a matrix of rows and columns; row selecting means responsive to an externally applied row address signal for selecting one row of memory cells from each of said memory cell blocks; column selecting means responsive to an externally applied column address signal for selecting at least one column of memory cells from each said memory cell blocks, said column selecting means adapted to set all columns in at least one block to selected state in response to a signal designating said flash writing; a plurality of write data transmitting lines providing corresponding to each of said plurality of memory cell blocks; means provided corresponding to each of said memory cell blocks for connecting the column selected by said column selecting means to a corresponding write data transmitting line, each said connecting means including connector elements provided corresponding to each column of an associated cell block and divided into groups by a plurality of columns; and means responsive to a flash write designating signal, a mask position designating signal and a write designating signal for controlling operation of said connecting means such that said connector elements are turned on or off group by group, said mask position designating signal designating memories to be masked by said group by group.

Claim 10

A multiport RAM according to claim 6, wherein said controlling means comprises means responsive to said column address for generating said mask position designating signal.

Claim 11

A multiport RAM according to claim 6, wherein said controlling means comprises means responsive to inactive state of said flash write designating signal and to active state of the write designating signal for making conductive all said connector elements.

Claim 14

A method according to claim 9, further comprising the step of generating said mask position designating signal in response to an externally applied column address.

Claim 15

In a semiconductor memory device including a memory cell block having a plurality of memory cells arranged in a matrix of rows and columns and a write data transmitting line, said memory cell block accessible at random sequence and columns of said plurality of memory cells divided into groups, each including a plurality of columns, a method of writing data comprising the steps of: selecting a row of said memory cell block in response to an external row address; and connecting, in response to a flash write designating signal and an external mask column group designating signal, all the columns, except columns in a group designated by said mask column group designating signal, to said write data transmitting line for transferring the same data to all the columns.

Claim 16

In a semiconductor memory device including a memory cell block having a plurality of memory cells arranged in a matrix of rows and columns and a write data transmitting line, said memory cell block accessible at random sequence and columns of said plurality of memory cells divided into groups, each including a plurality of columns, a method of writing data comprising the steps of: selecting a row of said memory cell block in response to an external row address; and connecting, in response to a flash write designating signal and an external mask column group designating signal, all the columns, except columns in a group designated by said mask column group designating signal, to said write data transmitting line for transferring the same data to all the columns.

Claim 17

A method according to claim 11, further comprising the step of generating said column group designating signal in response to an external column address.

Claim 18

In a semiconductor memory device including a plurality of memory blocks each having a plurality of memory cells arranged in rows and columns, a RAM port accessing to said memory block at random sequence and a serial port addressing said memory block at serial sequence, each of said memory block being divided into groups such that each group includes a plurality of columns, a method of writing data comprising the steps of: selecting a row from each of said memory blocks comprising the steps of: selecting a row from each of said memory blocks in response to an external row address; and responsive to a flash write designating signal and a mask column group designating signal, writing simultaneously, write data transmitted from said RAM port to all the columns in each of said memory blocks except columns of a group designated by said mask column group designating signal; whereby the same data are simultaneously written to memory cells connected to the selected row, except the columns of a group, designated by said mask column group designating signal, in each cell block.

Claim 19

In a semiconductor memory device including a plurality of memory blocks each having a plurality of memory cells arranged in rows and columns, a RAM port accessing to said memory block at random sequence and a serial port addressing said memory block at serial sequence, each of said memory block being divided into groups such that each group includes a plurality of columns, a method of writing data comprising the steps of: selecting a row from each of said memory blocks comprising the steps of: selecting a row from each of said memory blocks in response to an external row address; and responsive to a flash write designating signal and a mask column group designating signal, writing simultaneously, write data transmitted from said RAM port to all the columns in each of said memory blocks except columns of a group designated by said mask column group designating signal; whereby the same data are simultaneously written to memory cells connected to the selected row, except the columns of a group, designated by said mask column group designating signal, in each cell block.

Claim 20

A method according to claim 13, further comprising the step of: generating said mask column group designating signal in response to an externally applied column address signal.

Claim 21

In a semiconductor memory device including a plurality of memory cells arranged in a matrix of rows and columns, a method of writing data comprising the steps of: selecting a row of memory cells in which data is to be written; designating a group of columns in which data writing is to be prohibited, the number of said designated columns being at least one and less than the total number of columns in the matrix; simultaneously writing data representing a selected logic level to all the memory cells of the non designated columns in the selected row.

Claim 22

In a semiconductor memory device including a plurality of memory cells arranged in a matrix of rows and columns, a method of writing data comprising the steps of: selecting a row of memory cells in which data is to be written; designating a group of columns in which data writing is to be prohibited, the number of said designated columns being at least one and less than the total number of columns in the matrix; simultaneously writing data representing a selected logic level to all the memory cells of the non designated columns in the selected row.

Claim 23

A semiconductor memory device comprising: a memory cell array including a plurality of memory cells arranged in a matrix of rows and columns; row selecting means responsive to an externally applied row address for selecting a row of said memory cell array; column selecting means responsive to a column designating signal for selecting at least one column of said memory cell array; means for designating a flash writing mode in response to the presence of a flash write designating signal and for designating a normal writing mode in response to the absence of said flash write designating signal; means for simultaneously writing the same data to all the memory cells of columns not selected by said column selecting means in a row selected by said row selecting means during operation in said flash writing mode.

Claim 24

A semiconductor memory device comprising: a memory cell array including a plurality of memory cells arranged in a matrix of rows and columns; row selecting means responsive to an externally applied row address for selecting a row of said memory cell array; column selecting means responsive to a column designating signal for selecting at least one column of said memory cell array; means for designating a flash writing mode in response to the presence of a flash write designating signal and for designating a normal writing mode in response to the absence of said flash write designating signal; means for simultaneously writing the same data to all the memory cells of columns not selected by said column selecting means in a row selected by said row selecting means during operation in said flash writing mode.