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US5134533A
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Magnetoresistive sensor
Assignee: Thales SA
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Filing: 1990-06-21
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Granted: 1992-07-28
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Expires: 2010-06-21
Abstract
Abstract The present invention concerns a magnetroesistive sensor. In this sensor, the sensitive element is constituted by a monocrystalline magnetic metallic multilayer formed of a stack of layers of a magnetic material separated by layers of a non-magnetic material, the multilayer being constructed in such a way that the layers of magnetic material have antiferromagnetic type coupling and that of the transition between the antiparallel aligned state and the parallel aligned state occurs in a very short interval of the magnetic field.
Inventors
- 👤 Alain Friedrich
- 👤 Gerard Creuzet
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 20:22
CPC Classifications
G; G01; G01R; G01R33/00; G01R33/02; G01R33/06; G01R33/09; G01R33/093; B; B82; B82Y; B82Y25/00; G11; G11B; G11B5/00; G11B5/127; G11B5/33; G11B5/39; G11B5/3903; H; H10; H10N; H10N50/00; H10N50/80; H10N50/85; Y; Y10; Y10S; Y10S428/00; Y10S428/922; Y10S428/9265; Y10S428/928; Y10T; Y10T428/00; Y10T428/12; Y10T428/12493; Y10T428/12632
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
76 words
Magnetoresistive sensor, characterized by the fact that the sensitive element of the sensor is constituted of a monocrystalline magnetic metallic multilayer formed of a stack of layers of a magnetic material separated by layers of a non-magnetic material, the multilayer being constructed in such a way that the layers of magnetic material have antiferromagnetic coupling and that the transition between antiparallel aligned state and parallel aligned state takes place on a very weak magnetic field interval.
Claim 2
Dependent Claim
76 words
Magnetoresistive sensor, characterized by the fact that the sensitive element of the sensor is constituted of a monocrystalline magnetic metallic multilayer formed of a stack of layers of a magnetic material separated by layers of a non-magnetic material, the multilayer being constructed in such a way that the layers of magnetic material have antiferromagnetic coupling and that the transition between antiparallel aligned state and parallel aligned state takes place on a very weak magnetic field interval.
Claim 3
Dependent Claim
15 words
Magnetoresistive sensor according to claim 1, wherein the magnetic material is iron, cobalt or nickel.
Claim 4
Dependent Claim
16 words
Magnetoresistive sensor according to claim 1, wherein the non-magnetic material is manganese, chromium, vanadium or titanium.
Claim 5
Dependent Claim
26 words
Magnetoresistive sensor according to any one of claims 1 to 3, wherein the layers of magnetic material have a thickness of between 9 and 90 Å.
Claim 6
Dependent Claim
20 words
Magnetoresistive sensor according to claim 1, wherein the layers of non-magnetic material have a thickness of less than 30 Å.
Claim 7
Dependent Claim
27 words
Magnetoresistive sensor according to claim 1, wherein the layers of magnetic material are alternately thin and thick with a ratio of 1 to 3 between the thicknesses.
Claim 8
Dependent Claim
30 words
Magnetoresistive sensor according to claim 1, wherein the layers of magnetic material are of the same thickness and wherein the multilayer has uniaxial anisotropy in the plane of the layers.
Claim 9
Dependent Claim
22 words
Magnetoresistive sensor according to claim 1, wherein the magnetic metallic multilayer is covered with at least one additional layer of fixed magnetization.
Claim 10
Dependent Claim
18 words
Magnetoresistive sensor according to claim 1, wherein the magnetic metallic multilayer covered with a thick layer of iron.
Claim 11
Dependent Claim
19 words
Magnetoresistive sensor according to claim 1, wherein the magnetic field interval is of the order of a few Gauss.
Claim 12
Dependent Claim
22 words
Magnetoresistive sensor according to claim 1, characterized by the fact that it is polarized by a polarization field near the transition field.
Claim 13
Dependent Claim
14 words
Magnetoresistive sensor according to claim 1, wherein the multilayer is deposited on a substrate.
Claim 14
Dependent Claim
25 words
Magnetoresistive sensor according to claim 12, wherein the substrate is made of an insulating material or a non-doped semiconducting material with an appropriate lattice structure.
Claim 15
Dependent Claim
22 words
Magnetoresistive sensor according to claim 12 or 13, wherein the deposition is performed using an epitaxy technique such as molecular beam epitaxy.
Claim 16
Dependent Claim
15 words
Magnetoresistive sensor according to claim 1, wherein the multilayer is covered with an encapsulating layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-07-28 | 1996-01-27 | 1996-07-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-07-28 | 2000-01-27 | 2000-07-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-07-28 | 2004-01-27 | 2004-07-28 | $7700.00 | Window Closed / Lapsed |