Patent US5134058A successfully refreshed from Google Patents.
US5134058A
Expired / Lapsed
US
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Method for forming a fine pattern on a semiconductor having a step therein
Assignee: Samsung Electronics Co Ltd
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Filing: 1990-10-31
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Granted: 1992-07-28
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Expires: 2010-10-31
Abstract
Abstract A method for forming an accurate pattern on a semiconductor element that has a step. The method includes the steps of coating a photosensitive material on the surface of the semiconductor, pre-exposing to ultraviolet rays the photosensitive material exisiting in the non-step area which is formed on the surface of the semiconductor other than step area, through a first photomask, exposing the entire photosensitive material through a second photomask with a desired pattern to ultraviolet after removing the first photomask, and developing and removing only photosensitive material that is exposed to ultraviolet in the pre-exposing and exposing steps.
Inventors
- 👤 Woo-Sung Han
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 08:52
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/70; G03F7/70216; G03F7/703; G03F7/20; G03F7/2022; G03F7/70375; G03F7/70425; G03F7/70466
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
147 words
A method for forming a pattern on a semiconductor having at least an elevated step, an elevated area being formed on the surface of the elevated step and a non-elevated area being formed on the surface of the semiconductor other than the elevated area, comprising the consecutive steps of: coating a photosensitive material on the surface of the semiconductor; pre-exposing to a predetermined depth only the photosensitive material existing in the non-elevated area, through a first photomask, to ultraviolet rays; exposing desired sections of said photosensitive material existing over said elevated area and said non-elevated area, through a second photomask with a given pattern, to the ultraviolet rays after removing the first photomask; and developing and removing only photosensitive material that has been exposed to the ultraviolet rays in said pre-exposing step and photosensitive material that has been exposed to the ultraviolet rays in said exposing step.
Claim 2
Independent Claim
147 words
A method for forming a pattern on a semiconductor having at least an elevated step, an elevated area being formed on the surface of the elevated step and a non-elevated area being formed on the surface of the semiconductor other than the elevated area, comprising the consecutive steps of: coating a photosensitive material on the surface of the semiconductor; pre-exposing to a predetermined depth only the photosensitive material existing in the non-elevated area, through a first photomask, to ultraviolet rays; exposing desired sections of said photosensitive material existing over said elevated area and said non-elevated area, through a second photomask with a given pattern, to the ultraviolet rays after removing the first photomask; and developing and removing only photosensitive material that has been exposed to the ultraviolet rays in said pre-exposing step and photosensitive material that has been exposed to the ultraviolet rays in said exposing step.
Claim 3
Dependent Claim
49 words
The method for forming the pattern as claimed in claim 1, wherein: said photosensitive material has a predetermined photosensitivity; and in said pre-exposing step said photosensitive material existing in the non-elevated area is exposed to said ultraviolet rays at a photoexposure energy 30 to 70% of said predetermined photosensitivity.
Claim 4
Dependent Claim
31 words
The method for forming the pattern as claimed in claim 2, wherein said predetermined photosensitivity is 120 milliJoule/cm 2 and said photoexposure energy is between 35 and 84 milliJoule/cm 2 .
Claim 5
Dependent Claim
20 words
The method for forming the pattern as claimed in claim 1, wherein said photosensitive material is a positive photosensitive material.
Claim 6
Independent Claim
154 words
A method for forming a pattern on a surface of a solid material having at least an elevated step, an elevated area being formed on the surface of the elevated step and a non-elevated area being formed on the surface of the solid material other than the elevated area, comprising the consecutive steps of: coating a photosensitive material on the surface of the solid material; pre-exposing to a desired depth only the photosensitive material existing in the non-elevated area, through a first photomask, to ultraviolet rays; exposing desired areas of said photosensitive material existing over said elevated area and said non-elevated area, through a second photomask with a given pattern, to the ultraviolet rays after removing the first photomask; and developing and removing only the photosensitive material that has been exposed to the ultraviolet rays in said pre-exposing step and photosensitive material that has been exposed to the ultraviolet rays in said exposing step.
Claim 7
Independent Claim
154 words
A method for forming a pattern on a surface of a solid material having at least an elevated step, an elevated area being formed on the surface of the elevated step and a non-elevated area being formed on the surface of the solid material other than the elevated area, comprising the consecutive steps of: coating a photosensitive material on the surface of the solid material; pre-exposing to a desired depth only the photosensitive material existing in the non-elevated area, through a first photomask, to ultraviolet rays; exposing desired areas of said photosensitive material existing over said elevated area and said non-elevated area, through a second photomask with a given pattern, to the ultraviolet rays after removing the first photomask; and developing and removing only the photosensitive material that has been exposed to the ultraviolet rays in said pre-exposing step and photosensitive material that has been exposed to the ultraviolet rays in said exposing step.
Claim 8
Dependent Claim
50 words
The method for forming the pattern as set forth in claim 5, wherein: said photosensitive material has a predetermined photosensitivity; and in said pre-exposing step said photosensitive material existing in the non-elevated area is exposed to said ultraviolet rays at a photoexposure energy 30 to 70% of said predetermined photosensitivity.
Claim 9
Dependent Claim
32 words
The method for forming the pattern as set forth in claim 6, wherein said predetermined photosensitivity is 120 milliJoule/cm 2 and said photoexposure energy is between 35 and 84 milliJoule/cm 2 .
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-07-28 | 1996-01-27 | 1996-07-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-07-28 | 2000-01-27 | 2000-07-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-07-28 | 2004-01-27 | 2004-07-28 | $7700.00 | Window Closed / Lapsed |