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US5130762A Expired / Lapsed US ⏱️ 0.0 years remaining

Integrated quantum well feedback structure

Assignee: LYTEL INCORPORATED BRANCHBERG CORPORATE CENTER
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Filing: 1990-11-20
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Granted: 1992-07-14
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Expires: 2010-11-20
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Abstract

Abstract An integrated semiconductor device comprising a light emitting portion and a light detecting portion is disclosed. The integrated semiconductor device comprises two multiple quantum well P-I-N structures formed on a single substrate, one of the P-I-N structures being forward biased to emit light and the other of the P-I-N structures being reverse biased to detect light. Because of the quantum confined Stark effect, the reversed biased P-I-N structures is highly absorbing to light emitted by the forward biased P-I-N structure. The integrated semiconductor device may be utilized to implement an optical feedback path for a receiver.

Inventors

  • 👤 John D. Kulick

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-06 18:11
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/811; H10H20/812; B; B82; B82Y; B82Y20/00; H10F; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/223; H10F55/00; H10F55/18; H10F77/00; H10F77/10; H10F77/14; H10F77/146

Claims Analysis

Total Claims: 5
Claim 1
Independent Claim 210 words
A receiver comprising an amplifier having an input and an output, signal detecting means connected to said input for generating a first current in response to a signal, a feedback circuit connected between said output and said input for generating a second current for balancing said first current generated by said signal detecting means, said feedback circuit comprising: a single integrated semiconductor device including a substrate, a light emitter in the form of a first P-I-N structure formed on said substrate and having a first multiple quantum well active region, and a detector in the form of a second P-I-N structure formed on said substrate and having a second multiple quantum well active region, said first P-I-N structure being forward biased by voltages at the output of said amplifier to emit light, said second P-I-N structure being connected to said input of said amplifier, and means for maintaining a constant reverse bias voltage on said second P-I-N structure to shift an absorption edge of the active region of the second P-I-N structure into a portion of the spectrum wherein the active region of the second P-I-N structure is normally transparent to enable said second P-I-N structure to absorb light emitted by said first P-I-N structure to generate said second current.
Claim 2
Dependent Claim 210 words
A receiver comprising an amplifier having an input and an output, signal detecting means connected to said input for generating a first current in response to a signal, a feedback circuit connected between said output and said input for generating a second current for balancing said first current generated by said signal detecting means, said feedback circuit comprising: a single integrated semiconductor device including a substrate, a light emitter in the form of a first P-I-N structure formed on said substrate and having a first multiple quantum well active region, and a detector in the form of a second P-I-N structure formed on said substrate and having a second multiple quantum well active region, said first P-I-N structure being forward biased by voltages at the output of said amplifier to emit light, said second P-I-N structure being connected to said input of said amplifier, and means for maintaining a constant reverse bias voltage on said second P-I-N structure to shift an absorption edge of the active region of the second P-I-N structure into a portion of the spectrum wherein the active region of the second P-I-N structure is normally transparent to enable said second P-I-N structure to absorb light emitted by said first P-I-N structure to generate said second current.
Claim 3
Dependent Claim 12 words
The receiver of claim 1 wherein said light emitter is an LED.
Claim 4
Dependent Claim 23 words
The receiver of claim 1 wherein said first P-I-N structure is connected by way of a resistance to said output of said amplifier.
Claim 5
Dependent Claim 13 words
The receiver of claim 1 wherein said signal detecting means comprises a photodetector.

References Cited (Backward Citations)

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USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1995-07-14 1996-01-13 1996-07-14 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1999-07-14 2000-01-13 2000-07-14 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2003-07-14 2004-01-13 2004-07-14 $7700.00 Window Closed / Lapsed

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