US5130762A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Integrated quantum well feedback structure
Assignee: LYTEL INCORPORATED BRANCHBERG CORPORATE CENTER
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Filing: 1990-11-20
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Granted: 1992-07-14
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Expires: 2010-11-20
Abstract
Abstract An integrated semiconductor device comprising a light emitting portion and a light detecting portion is disclosed. The integrated semiconductor device comprises two multiple quantum well P-I-N structures formed on a single substrate, one of the P-I-N structures being forward biased to emit light and the other of the P-I-N structures being reverse biased to detect light. Because of the quantum confined Stark effect, the reversed biased P-I-N structures is highly absorbing to light emitted by the forward biased P-I-N structure. The integrated semiconductor device may be utilized to implement an optical feedback path for a receiver.
Inventors
- 👤 John D. Kulick
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 18:11
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/811; H10H20/812; B; B82; B82Y; B82Y20/00; H10F; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/223; H10F55/00; H10F55/18; H10F77/00; H10F77/10; H10F77/14; H10F77/146
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
210 words
A receiver comprising an amplifier having an input and an output, signal detecting means connected to said input for generating a first current in response to a signal, a feedback circuit connected between said output and said input for generating a second current for balancing said first current generated by said signal detecting means, said feedback circuit comprising: a single integrated semiconductor device including a substrate, a light emitter in the form of a first P-I-N structure formed on said substrate and having a first multiple quantum well active region, and a detector in the form of a second P-I-N structure formed on said substrate and having a second multiple quantum well active region, said first P-I-N structure being forward biased by voltages at the output of said amplifier to emit light, said second P-I-N structure being connected to said input of said amplifier, and means for maintaining a constant reverse bias voltage on said second P-I-N structure to shift an absorption edge of the active region of the second P-I-N structure into a portion of the spectrum wherein the active region of the second P-I-N structure is normally transparent to enable said second P-I-N structure to absorb light emitted by said first P-I-N structure to generate said second current.
Claim 2
Dependent Claim
210 words
A receiver comprising an amplifier having an input and an output, signal detecting means connected to said input for generating a first current in response to a signal, a feedback circuit connected between said output and said input for generating a second current for balancing said first current generated by said signal detecting means, said feedback circuit comprising: a single integrated semiconductor device including a substrate, a light emitter in the form of a first P-I-N structure formed on said substrate and having a first multiple quantum well active region, and a detector in the form of a second P-I-N structure formed on said substrate and having a second multiple quantum well active region, said first P-I-N structure being forward biased by voltages at the output of said amplifier to emit light, said second P-I-N structure being connected to said input of said amplifier, and means for maintaining a constant reverse bias voltage on said second P-I-N structure to shift an absorption edge of the active region of the second P-I-N structure into a portion of the spectrum wherein the active region of the second P-I-N structure is normally transparent to enable said second P-I-N structure to absorb light emitted by said first P-I-N structure to generate said second current.
Claim 3
Dependent Claim
12 words
The receiver of claim 1 wherein said light emitter is an LED.
Claim 4
Dependent Claim
23 words
The receiver of claim 1 wherein said first P-I-N structure is connected by way of a resistance to said output of said amplifier.
Claim 5
Dependent Claim
13 words
The receiver of claim 1 wherein said signal detecting means comprises a photodetector.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-07-14 | 1996-01-13 | 1996-07-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-07-14 | 2000-01-13 | 2000-07-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-07-14 | 2004-01-13 | 2004-07-14 | $7700.00 | Window Closed / Lapsed |