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US5122986A
Expired / Lapsed
US
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Two transistor dram cell
Assignee: Micron Technology Inc
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Filing: 1991-10-30
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Granted: 1992-06-16
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Expires: 2011-10-30
Abstract
Abstract A semiconductor memory cell includes a write row line, a read row line, a write column line, a read column line, a single MOS write transistor, and a single MOS read transistor. The write transistor has a first controlled node coupled to the write column line, a second controlled node, and a gate coupled to the write row line. The read transistor has a first controlled node coupled to the read column line, a second controlled node coupled to the read row line, and a gate coupled to the second controlled node to define a charge storage node.
Inventors
- 👤 Hank H. Lim
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 22:16
CPC Classifications
G; G11; G11C; G11C11/00; G11C11/21; G11C11/34; G11C11/40; G11C11/401; G11C11/403
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
187 words
A semiconductor memory array comprising: a plurality of write row lines; a plurality of read row lines; a plurality of write column lines; a plurality of read column lines; a plurality of two-transistor memory cells, each memory cell including a write transistor having a first controlled node coupled to the respective write column line, a second controlled node, and a gate coupled to the respective write row line; and a read transistor having a first controlled node coupled to the respective read column line, a second controlled node coupled to the respective read row line, and a gate coupled to the second controlled node of the write transistor to define a charge storage node; a plurality of loads, each load being coupled between a source of power supply voltage and the respective read column line; and means for preventing the read transistor from turning on in non-selected rows during a read operation including means for voltage limiting the read column line during the read operation such that the voltage on the read column line is not less than the power supply voltage minus two transistor threshold voltages.
Claim 2
Dependent Claim
187 words
A semiconductor memory array comprising: a plurality of write row lines; a plurality of read row lines; a plurality of write column lines; a plurality of read column lines; a plurality of two-transistor memory cells, each memory cell including a write transistor having a first controlled node coupled to the respective write column line, a second controlled node, and a gate coupled to the respective write row line; and a read transistor having a first controlled node coupled to the respective read column line, a second controlled node coupled to the respective read row line, and a gate coupled to the second controlled node of the write transistor to define a charge storage node; a plurality of loads, each load being coupled between a source of power supply voltage and the respective read column line; and means for preventing the read transistor from turning on in non-selected rows during a read operation including means for voltage limiting the read column line during the read operation such that the voltage on the read column line is not less than the power supply voltage minus two transistor threshold voltages.
Claim 3
Dependent Claim
45 words
A semiconductor memory array as in claim 1 in which the charge storage node has a capacitance equal to the sum of a parasitic capacitance of the second controlled node of the write transistor and a parasitic capacitance of the gate of the read transistor.
Claim 4
Dependent Claim
36 words
A semiconductor memory array as in claim 1 in which each load comprises a pull-up transistor, wherein the pull-up transistor and the read transistor are linearly sized to limit the voltage on the read column line.
Claim 5
Dependent Claim
25 words
A semiconductor memory array as in claim 3 in which the pull-up transistor comprises a P-channel transistor and the read transistor comprises an N-channel transistor.
Claim 6
Independent Claim
212 words
A method for reading data out of a selected memory cell in an array of memory cells; each cell having a single write transistor and a single read transistor; the write transistor having a first controlled node coupled to a write column line, a second controlled node, and a gate coupled to a write row line; and the read transistor having a first controlled node coupled to a read column line, a second controlled node coupled to a read row line, and a gate coupled to the second controlled node to define a charge storage node, the method comprising the steps of: providing a plurality of loads coupled between a source of power supply voltage and the respective read column line; coupling a logic zero to the write row line of the selected cell; coupling a logic zero to the read row line of the selected cell; sensing charge on the read column line of the selected cell; and sizing the load in relationship to the read transistor of the selected cell to voltage limit the read column line such that the voltage on the read column line cannot be less than the power supply voltage minus two transistor threshold voltages and read transistors in non-selected rows are prevented from turning on.
Claim 7
Independent Claim
212 words
A method for reading data out of a selected memory cell in an array of memory cells; each cell having a single write transistor and a single read transistor; the write transistor having a first controlled node coupled to a write column line, a second controlled node, and a gate coupled to a write row line; and the read transistor having a first controlled node coupled to a read column line, a second controlled node coupled to a read row line, and a gate coupled to the second controlled node to define a charge storage node, the method comprising the steps of: providing a plurality of loads coupled between a source of power supply voltage and the respective read column line; coupling a logic zero to the write row line of the selected cell; coupling a logic zero to the read row line of the selected cell; sensing charge on the read column line of the selected cell; and sizing the load in relationship to the read transistor of the selected cell to voltage limit the read column line such that the voltage on the read column line cannot be less than the power supply voltage minus two transistor threshold voltages and read transistors in non-selected rows are prevented from turning on.
Claim 8
Dependent Claim
28 words
The method of claim 5 in which the step of sizing the load comprises linearly sizing a P-channel pull-up transistor load in relationship to an N-channel read transistor.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-06-16 | 1995-12-16 | 1996-06-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-06-16 | 1999-12-16 | 2000-06-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-06-16 | 2003-12-16 | 2004-06-16 | $7700.00 | Window Closed / Lapsed |