Abstract A MOS control thyristor comprising a first region of a first conductivity type doped with a first impurity having a first concentration, a second region of a second conductivity type provided on the first region and doped with a second impurity having a second concentration which is lower than the first concentration, and a third region of the first conductivity type selectively formed in the surface of the second region. A fourth region of the second conductivity type is selectively formed in the surface of the third region, a fifth region of the second conductivity type is selectively formed so that it protrudes through the fourth region into the third region, and a sixth region of the first conductivity type is selectively formed so that it is in contact with the fifth region. The impurity dose amount in the third region is within the range 1×10 13 cm -2 to 7×10 14 cm -2 , and the impurity concentration in the third region is within the range 1.25×10 16 cm -3 to 8.75×10 17 cm -3 .
A MOS control thyristor comprising: a first region of a first conductivity type which is doped with a first impurity having a first concentration; a second region of a second conductivity type which is provided on said first region and is doped with a second impurity having a second concentration which is lower than the first concentration; a third region of said first conductivity type which is selectively formed in the surface of said second region; a fourth region of said second conductivity type which is selectively formed in the surface of said third region; a fifth region of said second conductivity type which is selectively formed so that it protrudes through said fourth region into said third region; and a sixth region of said first conductivity type which is selectively formed so that it is in contact with said fifth region, wherein, an impurity dose amount in said third region is within the range of 1×10 13 cm -2 to 7×10 14 cm -2 and an impurity concentration in said third region is within the range of 1.25×10 16 cm -3 to 8.75×10 17 cm -3 .
Claim 2
Dependent Claim
188 words
A MOS control thyristor comprising: a first region of a first conductivity type which is doped with a first impurity having a first concentration; a second region of a second conductivity type which is provided on said first region and is doped with a second impurity having a second concentration which is lower than the first concentration; a third region of said first conductivity type which is selectively formed in the surface of said second region; a fourth region of said second conductivity type which is selectively formed in the surface of said third region; a fifth region of said second conductivity type which is selectively formed so that it protrudes through said fourth region into said third region; and a sixth region of said first conductivity type which is selectively formed so that it is in contact with said fifth region, wherein, an impurity dose amount in said third region is within the range of 1×10 13 cm -2 to 7×10 14 cm -2 and an impurity concentration in said third region is within the range of 1.25×10 16 cm -3 to 8.75×10 17 cm -3 .