Patent US5122777A successfully refreshed from Google Patents.
US5122777A
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Resistor film and method for forming the same
Assignee: Fujifilm Business Innovation Corp
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Filing: 1990-07-05
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Granted: 1992-06-16
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Expires: 2010-07-05
Abstract
Abstract A resistor film formed by applying onto a substrate a homogeneous mixture solution of metal organic compounds including metals selected from the element group of silicon (Si), bismuth (Bi), lead (Pb), aluminum (Al), zirconium (Zr), calcium (Ca), tin (Sn), boron (B), titanium (Ti), barium (Ba), and the like, and a metal selected from the group of iridium (Ir) and ruthenium (Ru) and burning the homogeneous mixture solution. The homogeneous mixture solution is burned at a temperature of 700° C. or more in an atmosphere of oxygen.
Inventors
- 👤 Yoshiyuki Shiratsuki
- 👤 Kumiko Takahashi
- 👤 Kazuo Baba
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:40
CPC Classifications
H; H01; H01C; H01C7/00; H01C17/00; H01C17/06; H01C17/065; H01C17/06506; H01C17/06513; H01C17/20; H01C7/003
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
106 words
A resistor film formed by: applying onto a substrate a homogeneous mixture solution of metal organic compounds including: metals selected from the element group consisting of silicon (Si), bismuth (Bi), lead (Pb), aluminum (Al), zirconium (Zr), calcium (Ca), tin (Sn), boron (B), titanium (Ti), and barium (Ba); and a metal selected from the group consisting of iridium (Ir) and ruthenium (Ru); and burning said homogeneous mixture solution, in which the crystal structure contained in the thus formed resistor film consists essentially of a rutile type crystal structure of a metal oxide containing the said metal selected from the group consisting of iridium (Ir) and ruthenium (Ru).
Claim 2
Dependent Claim
106 words
A resistor film formed by: applying onto a substrate a homogeneous mixture solution of metal organic compounds including: metals selected from the element group consisting of silicon (Si), bismuth (Bi), lead (Pb), aluminum (Al), zirconium (Zr), calcium (Ca), tin (Sn), boron (B), titanium (Ti), and barium (Ba); and a metal selected from the group consisting of iridium (Ir) and ruthenium (Ru); and burning said homogeneous mixture solution, in which the crystal structure contained in the thus formed resistor film consists essentially of a rutile type crystal structure of a metal oxide containing the said metal selected from the group consisting of iridium (Ir) and ruthenium (Ru).
Claim 3
Dependent Claim
39 words
A resistor film according to claim 1, in which said metal oxide in said rutile type crystal structure contained in the thus formed resistor film has a crystal particle size in a range of 2 nm to 200 nm.
Claim 4
Dependent Claim
111 words
A resistor film formed by: applying onto a substrate a homogeneous mixture solution of metal organic compounds including: iridium (Ir) and metals selected from the element group consisting of silicon (Si), bismuth (Bi), lead (Pb), aluminum (Al), zirconium (Zr), calcium (Ca), tin (Sn), boron (B), titanium (Ti), and barium (Ba); and a metal selected from the group consisting of iridium (Ir) and ruthenium (Ru); and burning said homogeneous mixture solution, in which the diffraction pattern of diffused wave when a Kα ray of copper is used as an incident X ray source exhibits strong peaks at the values of 2θ of 28.1°, 34.7° and 54.1°, where θ represents the Bragg angle.
Claim 5
Dependent Claim
111 words
A resistor film formed by: applying onto a substrate a homogeneous mixture solution of metal organic compounds including: iridium (Ir) and metals selected from the element group consisting of silicon (Si), bismuth (Bi), lead (Pb), aluminum (Al), zirconium (Zr), calcium (Ca), tin (Sn), boron (B), titanium (Ti), and barium (Ba); and a metal selected from the group consisting of iridium (Ir) and ruthenium (Ru); and burning said homogeneous mixture solution, in which the diffraction pattern of diffused wave when a Kα ray of copper is used as an incident X ray source exhibits strong peaks at the values of 2θ of 28.1°, 34.7° and 54.1°, where θ represents the Bragg angle.
Claim 6
Dependent Claim
111 words
A resistor film formed by: applying onto a substrate a homogeneous mixture solution of metal organic compounds including: ruthenium (Ru) and metals selected from the element group consisting of silicon (Si), bismuth (Bi), lead (Pb), aluminum (Al), zirconium (Zr), calcium (Ca), tin (Sn), boron (B), titanium (Ti), and barium (Ba); and a metal selected from the group consisting of iridium (Ir) and ruthenium (Ru); and burning said homogeneous mixture solution, in which the diffraction pattern of diffused wave when a Kα ray of copper is used as an incident X ray source exhibits strong peaks at the values of 2θ of 28.1°, 35.2° and 54.1°, where θ represents the Bragg angle.
Claim 7
Dependent Claim
111 words
A resistor film formed by: applying onto a substrate a homogeneous mixture solution of metal organic compounds including: ruthenium (Ru) and metals selected from the element group consisting of silicon (Si), bismuth (Bi), lead (Pb), aluminum (Al), zirconium (Zr), calcium (Ca), tin (Sn), boron (B), titanium (Ti), and barium (Ba); and a metal selected from the group consisting of iridium (Ir) and ruthenium (Ru); and burning said homogeneous mixture solution, in which the diffraction pattern of diffused wave when a Kα ray of copper is used as an incident X ray source exhibits strong peaks at the values of 2θ of 28.1°, 35.2° and 54.1°, where θ represents the Bragg angle.
Claim 8
Independent Claim
93 words
A method for forming a resistor film comprising the steps of: applying onto a substrate a homogeneous mixture solution of metal organic compounds including: metals selected from the element group consisting of silicon (Si), bismuth (Bi), lead (Pb), aluminum (Al), zirconium (Zr), calcium (Ca), tin (Sn), boron (B), titanium (Ti), and barium (Ba); and a metal selected from the group consisting of iridium (Ir) and ruthenium (Ru); and burning said homogeneous mixture solution, in which said homogeneous mixture solution is burned at a temperature of 700° or more in an atmosphere of oxygen.
Claim 9
Independent Claim
93 words
A method for forming a resistor film comprising the steps of: applying onto a substrate a homogeneous mixture solution of metal organic compounds including: metals selected from the element group consisting of silicon (Si), bismuth (Bi), lead (Pb), aluminum (Al), zirconium (Zr), calcium (Ca), tin (Sn), boron (B), titanium (Ti), and barium (Ba); and a metal selected from the group consisting of iridium (Ir) and ruthenium (Ru); and burning said homogeneous mixture solution, in which said homogeneous mixture solution is burned at a temperature of 700° or more in an atmosphere of oxygen.
References Cited (Backward Citations)
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