Process for producing thin films

Claim 2

A process for producing a thin film comprising forming a charge carrier generation layer by electrotreating a dispersion or a solution obtained by dispersing or dissolving a hydrophobic substance powder, said substance being a charge carrier generation substance, said dispersion or solution containing a surfactant having a HLB value of 10.0 to 20.0 to form a thin film of said hydrophobic substance on a cathode, wherein the powder has an average particle diameter of not more than 10 μm.

Claim 3

The process for producing a thin film of claim 1, wherein the surfactant is a ferrocene compound and a thin film of said substance on the cathode is formed at a liquid temperature of 0° to 50° C., a potential on the cathode of -0.3 to -5.0V, and a current density of 1 to 300 μA/cm 2 .

Claim 4

The process for producing a thin film of claim 1, wherein the surfactant is a compound other than a ferrocene compound, and a thin film of said substance on the cathode is formed at a liquid temperature of room temperature of 100° C., a potential on the cathode of -0.5 to -10.0V, and a current density of 50 μA/cm 2 to 100 mA/cm 2 .

Claim 5

The process for producing a thin film of claim 1, wherein the surfactant is selected from the group consisting of polyoxyethylenealkylether, polyoxyethylene fatty acid ester, polyoxyethylene alkylphenylether, alkyltrimethylammonium chloride and fatty acid diethylaminoethyamide.

Claim 6

The process for producing a thin film of claim 1, wherein the cathode is a base metal.

Claim 7

The process for producing thin films of claim 1, wherein the cathode is made of aluminum.

Claim 8

The process of producing a thin film of claim 1, wherein the average particle diameter is 1 to 0.01 μm and the powder is dispersed or dissolved in an aqueous medium.

Claim 9

The process for producing a thin film of claim 1, which further comprises forming a charge carrier transport layer on said charge carrier generation layer, said charge carrier transport layer comprising a compound selected from the group consisting of indoline, quinoline, triphenylamine, bisazo, pyrazole, pyrazoline, oxidiazole, thiazole, imidazole, hydrazone, triphenylmethane, carbazole and benzaldehyde.

Claim 10

The process of claim 8, wherein the charge carrier generation layer comprises phthalocyanine and the charge carrier transfer layer comprises polyvinylcarbazole.

Claim 11

A process for producing a thin film comprising forming a charge carrier generation layer by electrotreating a dispersion or a solution obtained by dispersing or dissolving a hydrophobic substance powder, said substance being a charge carrier generation substance, said dispersion or solution containing a surfactant having a HLB value of 10.0 to 20.0 to form a thin film of said hydrophobic substance on a cathode, wherein the surfactant is a micelle forming agent comprising a ferrocene compound.

Claim 12

A process for producing a thin film comprising forming a charge carrier generation layer by electrotreating a dispersion or a solution obtained by dispersing or dissolving a hydrophobic substance powder, said substance being a charge carrier generation substance, said dispersion or solution containing a surfactant having a HLB value of 10.0 to 20.0 to form a thin film of said hydrophobic substance on a cathode, wherein the surfactant is a micelle forming agent comprising a ferrocene compound.

Claim 13

The process for producing a thin film of claim 10, wherein the surfactant is a ferrocene compound and a thin film of said substance on the cathode is formed at a liquid temperature of 0° to 50° C., a potential on the cathode of -0.3 to -5.0V, and a current density of 1 to 300 μA/cm 2 .

Claim 14

The process for producing a thin film of claim 10, wherein the surfactant is a compound other than a ferrocene compound, and a thin film of said substance on the cathode is formed at a liquid temperature of room temperature of 100° C., a potential on the cathode of -0.5 to -10.0V, and a current density of 50 μA/cm 2 to 100 mA/cm 2 .

Claim 15

The process for producing a thin film of claim 10, wherein the cathode is made of aluminum.

Claim 16

The process for producing a photoconductor for electrophotography, which comprises forming a charge carrier generation layer by dispersing or dissolving a hydrophobic substance powder, said substance being a charge carrier generation substance, said powder having an average particle diameter of not more than 10 μm in an aqueous medium with a surfactant having a HLB value of 10.0 to 20.0, said surfactant is a compound other than a ferrocene compound, and subsequently electrotreating the resulting dispersion or solution with an aluminum electrode as a cathode, to form a thin film of said hydrophobic substance on said aluminum electrode.

Claim 17

The process for producing a photoconductor for electrophotography, which comprises forming a charge carrier generation layer by dispersing or dissolving a hydrophobic substance powder, said substance being a charge carrier generation substance, said powder having an average particle diameter of not more than 10 μm in an aqueous medium with a surfactant having a HLB value of 10.0 to 20.0, said surfactant is a compound other than a ferrocene compound, and subsequently electrotreating the resulting dispersion or solution with an aluminum electrode as a cathode, to form a thin film of said hydrophobic substance on said aluminum electrode.

Claim 18

The process of claim 14, wherein the surfactant is selected from the group consisting of polyoxyethylene alkylether, polyoxyethylene fatty acid ester, polyoxyethylene alkylphenylether, alkyltrimethylammonium chloride and fatty acid diethylaminoethylamide.

Claim 19

The process of claim 14, which further comprises forming a charge carrier transport layer on said charge carrier generation layer, said charge carrier transport layer comprising a compound selected from the group consisting of indoline, quinoline, triphenylamine, bisazo, pyrazole, pyrazoline, oxidiazole, thiazole, imidazole, hydrazone, triphenylmethane, carbazole and benzaldehyde.

Claim 20

The process of claim 16, wherein the charge carrier generation layer comprises phthalocyanine and the charger carrier transfer layer comprises polyvinylcarbazole.

Claim 21

A process for producing a thin film comprising forming a charge carrier generation layer by electrotreating a dispersion or a solution obtained by dispersing or dissolving a hydrophobic substance powder, said substance being a charge carrier generation substance, said dispersion or solution containing a surfactant having a HLB value of 10.0 to 20.0 to form a thin film of said hydrophobic substance on a cathode, wherein the surfactant is a ferrocene compound and a thin film of said substance on the cathode is formed at a liquid temperature of 0° to 50° C., a potential on the cathode of -0.3 to -5.0V, and a current density of 1 to 300 μA/cm 2 and, wherein the ferrocene compound is of the formula wherein R 1 and R 2 are each an alkyl group having no more than 6 c carbon atoms, an alkoxy group having no more than 6 carbon atoms, an amino group, a dimethylamino group, a hydroxyl group, an acetyl amino group, a carboxyl group, a methoxycarbonyl group, an acetoxyl group, an aldehyde group and a halogen, R 3 is a hydrogen or a straight chain or branched alkyl or alkenyl group having 4 to 18 carbon atoms, each of R 4 and R 5 is a hydrogen or a methyl group, Y is an oxygen or an oxycarbonyl group, a is an integer from zero to 4, b is an integer from zero to 4, m is an integer from 1 to 18 and n is a real number from 2 to 70.

Claim 22

A process for producing a thin film comprising forming a charge carrier generation layer by electrotreating a dispersion or a solution obtained by dispersing or dissolving a hydrophobic substance powder, said substance being a charge carrier generation substance, said dispersion or solution containing a surfactant having a HLB value of 10.0 to 20.0 to form a thin film of said hydrophobic substance on a cathode, wherein the surfactant is a ferrocene compound and a thin film of said substance on the cathode is formed at a liquid temperature of 0° to 50° C., a potential on the cathode of -0.3 to -5.0V, and a current density of 1 to 300 μA/cm 2 and, wherein the ferrocene compound is of the formula wherein R 1 and R 2 are each an alkyl group having no more than 6 c carbon atoms, an alkoxy group having no more than 6 carbon atoms, an amino group, a dimethylamino group, a hydroxyl group, an acetyl amino group, a carboxyl group, a methoxycarbonyl group, an acetoxyl group, an aldehyde group and a halogen, R 3 is a hydrogen or a straight chain or branched alkyl or alkenyl group having 4 to 18 carbon atoms, each of R 4 and R 5 is a hydrogen or a methyl group, Y is an oxygen or an oxycarbonyl group, a is an integer from zero to 4, b is an integer from zero to 4, m is an integer from 1 to 18 and n is a real number from 2 to 70.

Claim 23

The process for producing a thin film of claim 18, wherein the surfactant has a HLB value of 12 to 18.

Claim 24

The process for producing a thin film of claim 19, wherein the surfactant is in a concentration of 10 μm to 1M.

Claim 25

The process for producing a thin film of claim 20, wherein the thin film is formed at a liquid temperature of 5° to 40° C., a potential of the cathode of -0.05 to -2.00V, and a current density of 1 to 100 μA cm 2 ; the cathode is aluminum; and the powder has an average particle diameter of 1 to 0.01 μm.